RN17A1 Search Results

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Text: RN1241-RN1244 TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS RN17A1 7 • ■g uRm N u -m 17A m m m ■w ■ R N 1■ 9 Z■R« r g m m ■v R N 1 1Ù.Ù. ■ ■ g u m u -m m Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • 4.2 MAX. High Emitter-Base Voltage :V eb 0 = 25V (Min.)