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Abstract: No abstract text available
Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 Previous: REJ03G1567-0100 Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting
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RQA0004LXAQS
R07DS0496EJ0200
REJ03G1567-0100)
PLZZ0004CA-A
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RQA0004LXAQS
Abstract: No abstract text available
Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz Compact package capable of surface mounting
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RQA0004LXAQS
R07DS0496EJ0400
PLZZ0004CA-A
RQA0004LXAQS
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RQA0004LXTL-E
Abstract: 155-8-1 905-170 RQA0004LXAQS
Text: RQA0004LXAQS Silicon N-Channel MOS FET REJ03G1567-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A
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RQA0004LXAQS
REJ03G1567-0100
PLZZ0004CA-A
RQA0004LXTL-E
155-8-1
905-170
RQA0004LXAQS
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RQA0004LXAQS
Abstract: RQA0004LXTL-E ka 494
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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