KA 1046 Y 838
Abstract: RQG1001UPAQF RQG1001UP-TL-E SC-82AB
Text: RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz
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RQG1001UPAQF
REJ03G1551-0100
PTSP0004ZA-A
KA 1046 Y 838
RQG1001UPAQF
RQG1001UP-TL-E
SC-82AB
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ka 317 npn
Abstract: 2n2646 equivalent RQG1001UPAQF RQG1001UP-TL-E SC-82AB
Text: RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz
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Original
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PDF
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RQG1001UPAQF
REJ03G1551-0100
PTSP0004ZA-A
ka 317 npn
2n2646 equivalent
RQG1001UPAQF
RQG1001UP-TL-E
SC-82AB
|
RQG1001UPAQF
Abstract: RQG1001UP-TL-E SC-82AB
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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