RQG2001URAQF
Abstract: RQG2001UR-TL-E SC-82AB
Text: RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
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RQG2001URAQF
REJ03G1554-0100
PTSP0004ZA-A
RQG2001URAQF
RQG2001UR-TL-E
SC-82AB
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RQG2001URAQF
Abstract: RQG2001UR-TL-E SC-82AB 01136
Text: RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
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Original
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PDF
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RQG2001URAQF
REJ03G1554-0100
PTSP0004ZA-A
RQG2001URAQF
RQG2001UR-TL-E
SC-82AB
01136
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RQG2001URAQF
Abstract: RQG2001UR-TL-E SC-82AB
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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