RR520 Search Results

x9cmme

Abstract: oscillator tunnel diode Position Estimation transistor substitution chart USE OF TRANSISTOR AN1158 AN43 RR-520 X9241A X9312
Contextual Info: Designing with Intersil Digitally Controlled Potentiometers XDCPs Application Note Introduction The use of Intersil's nonvolatile digital potentiometers (XDCPs) can simplify and/or solve many mixed signal design problems. However, in some applications, a deeper

x9cmme

Abstract: X9CMME datasheet X9C103 AN43 AN53 RR-520 X9241A X9312 X9313 X9314
Contextual Info: Application Note AN53 Designing with Xicor Digitally Controlled Potentiometers XDCPs Introduction The use of Xicor's nonvolatile digital potentiometers (XDCPs) can simplify and/or solve many mixed signal design problems. However, in some applications, a

XAAR 128

Abstract: xaar 1K x 4 static ram ttl S3V 77 S3v 32 RR-504 RR-520 X2212 X2212I
Contextual Info: X Commercial Industrial 1K X2212 X2212I S K 256 x 4 Bit Nonvolatile Static RAM in all Xicor 5V nonvolatile memories. The X2212 fe a ­ tures the JEDEC approved pinout for 4-bit-wide m em o­ ries, com patible with industry standard RAMs. FEATURES • Single 5V Supply

1K x 4 static ram ttl

Abstract: x2201 RR-504 RR-520 X2201A
Contextual Info: Jtear 1K Commercial X2201A 1024 x 1 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: V q c = 3 V Typical

X2864A

Abstract: x2864 X2864A-25 X2864A-35 X2864A-45 x2864ai RR-520
Contextual Info: tear Commercial X2864A fli 0, vflR i Industrial_ X2864AI_ 8192x8Blt 64K _ Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast W rite Cycle Times — 16-Byte Page W rite Operation — Byte or Page W rite Cycle: 5 ms Typical

X2210

Abstract: RR-504 RR-520 X2210I xicor x2210
Contextual Info: nee Dit 256 B,t Commercial Industrial X2210 X2210I 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

24c16n

Abstract: AS1010
Contextual Info: X 1R1>. 16K n r Commercial X24C16 Industrial_ X24C16I_ 2 0 4 8 x8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 uA • Internally Organized as Eight Pages

Contextual Info: xhe Commercial Industrial 4K X2004 X2004I 512x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma­ ble nonvolatile memories. The X2004 features the JEDEC approved pinout for byte-wide memories, com­

Contextual Info: 31E D XI CO R INC m 0 Q Q 2 flbb 2 H ^ 1 7 4 3 S i i G W Commercial Industrial 64K X2864H X2864HI S o r V ,8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times

x9cmme

Abstract: ic x9cmme data X9C103
Contextual Info: SEE D XICOR INC 0 0 0 3 b 7 fl SBÖ * X I C Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS —Active Current, 3 mA Max —Standby Current, 500 |iA Max

X9503

Abstract: X9503 equivalent X9103 Application note x9314 x9cmme AN53 xicor Position Estimation RR-520 XICOR AN43 USE OF TRANSISTOR
Contextual Info: Application Note AN53 Designing with Xicor E2POTs by Gray Creager, December 1994 Introduction The use of Xicor's nonvolatile digital potentiometers 2 E POTs can simplify and/or solve many mixed signal design problems, however in some 2 applications, a deeper understanding of E POT

X24C02

Contextual Info: 3IE D XICOR INC *mi7M3 000270^ t PRELIMINARY INFORMATION Commercial Industrial 2K X24C02 X24C02I 256 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized 256 x 8

x2001

Abstract: xicor x2001 RR-504
Contextual Info: X2001 X2001I Commercial Industrial 1K 128x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma­ ble nonvolatile memories. The X2001 features the JEDEC approved pinout for byte-wide memories, com­

x24c04i

Contextual Info: XICO R INC 31E Commercial Industrial 4K •W 1 7 4 3 D O D B ? 1^ X24C04 X24C04I 51 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized as Two Pages

x2404

Abstract: X2404I BUT13
Contextual Info: X i H K AVC Commercial X2404 m o v «Rit _Industrial_ X2404I_ _ Electrically Erasable PROM TYPICAL FEATURES • Internally Organized as Two Pages — Each 256 x 8 • 2 Wire Serial Interface • Provides Bidirectional Data Transfer

x9cmme

Abstract: X9C103
Contextual Info: Preliminary Information Terminal Voltage ±5V X9CM M E im E2POT Digitally Controlled Potentiometer FEATURES D E S C R IP T IO N • Compatible with X9MME • Low Power CMOS — Active Current, 3 mA Max — Standby Current, 500 |iA Max • 99 Resistive Elements

XICOR x2004

Abstract: 4RCC X2004 RR-504 RR-520 XICOR x2004i
Contextual Info: KEaü 4K Commercial Industrial X2004 X2004I 5 1 2 x 8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma­ ble nonvolatile memories. The X2004 features the JED EC approved pinout for byte-wide memories, com­

RR-504

Abstract: RR-520 X2210 X2210I NOVRAM
Contextual Info: nee Dit 256 B,t Commercial Industrial X2210 X2210I 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical

ECE1077

Abstract: mec5025 MAX8774 "" schematic lcd inverter dell STAC9205 quanta u36 max8774 EMC4001 Maxim MAX8774 0805 10V X7R 4.7UF quanta
Contextual Info: 5 4 3 2 1 D D Quanta Project Name: JX6 Dell Project Name: MGD Lite 2007-03-01 C C REV : D3B A00/X-Build Stage B B A A Title QUANTA COMPUTER COVER PAGE 5 4 3 2 Size Document Number MGD Date: Friday, March 02, 2007 Rev 3A Sheet 1 1 of 89 1 2 3 4 5 6 JX6 MGD-INTEGRATED

x2864

Abstract: X28256 X2864A X28256-25 AO-A14 RR-520
Contextual Info: o Commercial X28256 v a Bit Industrial_ X28256I_ 32K x 8 Blt * rvc Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast Write Cycle Times — 64-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical

XICOR x2004

Contextual Info: X2004 X2004I Commercial Industrial 4K ifior 512x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V program m a­ ble nonvolatile m emories. The X2004 features the JEDEC approved pinout for byte-wide mem ories, com ­

transistor poly3

Abstract: RR510 RR-504 RR-520 X28C256 rr520
Contextual Info: Xicor Endurance Report Xicor Endurance Report RR-520 H. A.R. Wegener INTRODUCTION This report describes endurance relating to Xicor’sproducts employing the Direct WriteTM cell. These devices display enhanced endurance cycling characteristics that are attributable to the direct write cell, process

RR-520

Abstract: X2804A X2804A-25 X2804A-35 X2804A-45 X2804AI X2804AI-25 X2804AI-35
Contextual Info: X Commercial Industrial 4K X2804A X2804AI y a r 5 1 2 x 8 Bit Electrically Erasable PROM FEATURES • Simple Byte Write Operation — Internally Latched Address and Data —Self Timed Write — Noise Protected WE Pin • Reliable N-Channel Floating Gate MOS

Contextual Info: Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS —Active Current, 3 mA Max —Standby Current, 500 pA Max • 99 Resistive Elements —Temperature Compensated