stk 300W
Abstract: AACE R3000A TFK J BD 176 NAFI TX39 jalr hce 4060 AAAAEU TFK F BD 175
Text: 32 TX System RISC TX39 当社は品質信頼性の向上に努めていますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用頂く場合は、半導体製品の
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R3000A
991214DHG1
NLOPQRTX39
PQR20
HTX39
R3000
R3000
RISCTX39
2302444D8AA
stk 300W
AACE
R3000A
TFK J BD 176
NAFI
TX39
jalr
hce 4060
AAAAEU
TFK F BD 175
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Untitled
Abstract: No abstract text available
Text: , Line, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. GSRU20030 GSRU20035 GSRU20040 • High Speed • Rugged • Cost Effective NPN 300, 350, 400V 20 AMP SWITCHING t, — 100ns TYPICAL Off-line Power Supplies • Motor Speed Control Circuits
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GSRU20030
GSRU20035
GSRU20040
100ns
GSHU20030
Cas10
100/J
O-204AA
35lmml.
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MRF393
Abstract: No abstract text available
Text: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier
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MRF393
MRF393
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series NPN Silicon Power Transistors MJ16012* These transistors are designed for high-voltage, high-speed, power switching in
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MJ16010
MJW16010
MJ16012*
MJ16012
MJW16012
MJ16010
MJW16010
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OPA111
Abstract: OPA111AIH OPA111AMH OPA111BIH OPA121 OPA121ACH OPA121BCP
Text: C ir w a y 0 PA 111/121 V th A J i SIGNAL PROCESSING EXCEUJSNCE PRECISION OPERATIONAL AMPLIFIER PRELIMINARY SPECIFICATIONS FEATURES/BENEFITS * * * * * * Low noise Low input bias current Low input offset voltage Low drift [jjaji conimon-modfi rsjcction High open-loop gain
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OPA111/121
OPA111AIH
OPA111AMH
OPA111AMH/883
OPA111BIH
OPA121ACH
OPA121BCP
OPA111
OPA111AIH
OPA111AMH
OPA111BIH
OPA121
OPA121ACH
OPA121BCP
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5L27
Abstract: OP-37 HA2-5127 HA-5127 HA-5127A
Text: - H A - 5 1 2 7 Ü f ê j g , m t y - t '•/ M E Ä - H A R R I S i • « • A * Í I Ü f S E E : 3n V / v r H z u - 121 h : 10V/ u s « ai mt t HA-5127A HA-5127 * Vs-±15V « S t f f ±22 ±22 Ta=25'C A ^ € £ / / V ± 0.7 ±0 .7 V • r f f j f ' J P f , rsjCM RR
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HA-5127
HA2-5127
HA7-S127
OP-37
HA-5127A
HA-5127
5L27
OP-37
HA2-5127
HA-5127A
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Untitled
Abstract: No abstract text available
Text: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are
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UESI101
UES1102
UES1103
BYV27-50
BYV27-100
BYV27-150
UES1101
100ms
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Untitled
Abstract: No abstract text available
Text: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are
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UES1301
BYV28-50
UES1302
BYV28-100
UES1303
BYV28-150
UES1301
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IRF1Bc40g
Abstract: IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A
Text: PD-9.1211 International S Rectifier IRFIBC40GLC HEXFET Pow er M O SFET Isolated Package High Voltage lsolatlon= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 600V R DS on = 1 In = 3.5A D escription Third Generation HEXFETs from International Rectifier provide the designer
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IRFIBC40GLC
T0-220
O-220
irfi840g
IRF1Bc40g
IRF1BC40
IRF1BC40GLC
SAJ 220
IRFIBC40GLC
7z mosfet
ID37A
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15N15
Abstract: rfm15n15 diode RA 225 R
Text: R FM 15N 12/15N 15 R FP15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d
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12/15N
FP15N12/15N15
-204A
FP15N12
RFP15N15
92CS-J4B52R1
92CS-36I45
15N15
rfm15n15
diode RA 225 R
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sinewave inverter 5000 watt
Abstract: C157C ALPS lcd inverter C149M10 High power SCR c157a C158PB C154 C165A C158
Text: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo z 5 1000 E g 900 < (9 g 800 700 600 500 tf IO uV * IO fO o 400 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S
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C48/C148
C49/C149
sinewave inverter 5000 watt
C157C
ALPS lcd inverter
C149M10
High power SCR
c157a
C158PB
C154
C165A
C158
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GE10016
Abstract: GE10023 GE10015 GE10020 GE10022 GEI0020 GE1001
Text: u i a u Q D P P n GE10015,16, 20.21.22.23 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 40-60 AMPS, 250 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultra sonic equipment and
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GE10015
S30fl
T0-204AE
tjs150Â
QEI00I5,
OEI0020
OE10022,
GE10016
GE10023
GE10020
GE10022
GEI0020
GE1001
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Untitled
Abstract: No abstract text available
Text: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses
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IRGBC20MD2
10kHz)
O-22QAB
C-356
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KE7245A1
Abstract: diode 345
Text: 3RE D POWEREX INC • 7SSMb21 Q0DM3Ô2 M H P R X mNWDL KE7245A1 Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module
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7SSMb21
1S697
BP107,
KE7245A1
Amperes/600
345710s
diode 345
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC TlbMlHE DGCHBbM b M S M Ö K 4EE D LM317 LINEAR INTEGRATED CIRCUIT 3-TERMINAL POSITIVE ADJUSTABLE REGULATOR This monolithic integrated circuit is an adjustable 3-terminal positive voltage regulator designed to supply more than 1,5A of load current with
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LM317
LM317T
O-220
LM317
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PDF
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Marking v5j
Abstract: No abstract text available
Text: MP SERIES □ □ □ □ □ Industry’s widest range of TO-style power resistors! Standard resistance range: 0 .0 1 fi to 5 6 K fl Standard tolerance: ±1%, ±2%, ±5% available to 0.1% Non-Inductive performance Resistor is electrically isolated from the mounting surface
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MP126
MP220,
MP220B
25ppm
50ppm
FA069
Marking v5j
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect
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Semi260
TY510
TY6004
TY6008
TY6010
TY8008
TY8010
2N6394
MCR218-8
UJT-2N2646 PIN DIAGRAM DETAILS
speed control of dc motor using ujt scr
c107m TRANSISTOR equivalent
UJT pin diagram 2N2646
1000w inverter PURE SINE WAVE schematic diagram
TY6008
triac ot 239
class d 1000w amplifier
inverter welder 4 schematic
thyristor zo 402
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Untitled
Abstract: No abstract text available
Text: _^ 2 • 4305571 0DS4425 ÛSE ■ HAS RFH30N12 RFH30N15 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Package Features TO-218AC • 30A , 120V and 150V TOP VIEW • rp g to n = 0 .0 7 5 ÎÎ • SOA is Power-Dissipation Limited
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0DS4425
RFH30N12
RFH30N15
O-218AC
RFH30N12
RFH30N15
D0S442S
92CS-36252
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PDF
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PN200
Abstract: PN4250A
Text: S E M I C O N D U C T O R ¡m PN4250A PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Màximum RStinQS
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PN4250A
PN200
PN4250A
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PN200
Abstract: PN4249
Text: SEMICONDUCTOR PN4249 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted
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PN4249
PN200
PN4249
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Untitled
Abstract: No abstract text available
Text: 4302571 0 0 5 4 7 5 ‘ï LT? • HAS ÎH HARRIS RFD12N06RLE, RFD12N06RLESM U U RFP12N06RLE S E M , C O N D U C T O R January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages • 12A,60V • r DS(on) RFD12N06RLE (TO-251)
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RFD12N06RLE,
RFD12N06RLESM
RFP12N06RLE
ary1994
RFD12N06RLE
O-251)
O-252)
AN7254
AN-7260.
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Untitled
Abstract: No abstract text available
Text: HA RR IS S E M I C O N D S E CT OR böE D • 4 3 02 27 1 G G S G 2 ti3 Lfll « H A S HGTG24N60D1D ÍE 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 24 Amp, 600 Volt • Latch Free Operation
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HGTG24N60D1D
O-247
500ns
60ri8
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PDF
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C 32725
Abstract: BC327 C327 C327 C 327-25 C327 PNP BC327B c328 bc328c
Text: BC327,-16,-25 BC328,-16,-25 MAXIMUM RATINGS Rating S ym bol BC 327 VCEO -4 5 C o lle c to r-B a s e V o lta g e VCBO - 50 E m itte r-B a s e V o lta g e V £B O - 5.0 V dc >C -8 0 0 m Adc PD 625 5.0 C o lle c to r-E m itte r V o lta g e C o lle c to r C u rre n t —
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BC327
BC328
O-226AA)
C 32725
BC327 C327
C327
C 327-25
C327 PNP
BC327B
c328
bc328c
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MPS4258
Abstract: No abstract text available
Text: M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO -1 2 Vdc Collector-Base Voltage VCBO -1 2 Vdc Emitter-Base Voltage Ve b o Rating Unit -4 .5 Vdc Collector Current — Continuous >c -80 m Adc Total Device Dissipation @ Derate above 25°C = 25°C
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