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Abstract: No abstract text available
Text: 1 N AMER PHILIPS/DISCRETE ObE D • ^53=131 0D1SDS1 >4 ■ MRB11175Y T - 3 3 - *T PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,
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MRB11175Y
bb53T31
Q01S05M
7Z210t3
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RTC11175Y
Abstract: MRB11175Y
Text: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,
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MRB11175Y
FO-67
T-33-/LS
7Z21013
7294SÃ
RTC11175Y
MRB11175Y
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