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Catalog Datasheet	MFG & Type	Document Tags	PDF
RU1HL8L Abstract: ruichips RUICHI Text: RU1HL8L P-Channel Advanced Power MOSFET Features Pin Description • -100V/-8A, RDS ON =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO252 • 100% avalanche tested • Lead Free and Green Devices Available	Original	-100V/-8A, RU1HL8L ruichips RUICHI	PDF

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RU1HL8L

Abstract: ruichips RUICHI
Text: RU1HL8L P-Channel Advanced Power MOSFET Features Pin Description • -100V/-8A, RDS ON =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO252 • 100% avalanche tested • Lead Free and Green Devices Available

Original

-100V/-8A, RU1HL8L ruichips RUICHI

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