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    RUR30100 DIODE Search Results

    RUR30100 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RUR30100 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    rur30100 Diode

    Abstract: RUR30100 RURP30100
    Text: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,


    Original     		RURP30100 RURP30100 110ns) 110ns rur30100 Diode RUR30100 PDF

    RUR30100

    Abstract: rur30100 Diode tb 120 RURP30100
    Text: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,


    Original     		RURP30100 RURP30100 110ns) 110ns RUR30100 rur30100 Diode tb 120 PDF

    RUR30100

    Abstract: rur30100 Diode RURP30100
    Text: RURP30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.


    Original     		RURP30100 RURP30100 110ns) 110ns 175oC RUR30100 rur30100 Diode PDF

    RUR30100

    Abstract: RURP30100 rurp3090 RURP3070 RURP3080
    Text: RURP3070, RURP3080, RURP3090, RURP30100 200 200 100 100 IR , REVERSE CURRENT µA IF , FORWARD CURRENT (A) Typical Performance Curves TJ = +175oC TJ = +100oC 10 TJ = +25oC 1 TJ = +175oC 10 TJ = +100oC 1.0 0.1 TJ = +25oC 0.01 0.0 0.5 1.0 1.5 2.0 2.5 400 600


    Original     		RURP3070, RURP3080, RURP3090, RURP30100 175oC 100oC 121oC) 20kHz) RUR30100 RURP30100 rurp3090 RURP3070 RURP3080 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    RUR30100

    Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
    Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns


    OCR Scan     		43D2571 110ns) RUR3070, RUR3080, RUR3090, RUR30100 RUR3080. RUR3090RUR30100 rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V PDF

    Untitled

    Abstract: No abstract text available
    Text: « RURP3070, RURP3080, RURP3090, RURP30100 ¡11995 30A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 110ns JEDEC TQ-220AC ANODE CATHODE • +175°C Rated Junction Temperature CATHODE (FLANGE) • Reverse Voltage Up to 1000V


    OCR Scan     		RURP3070, RURP3080, RURP3090, RURP30100 110ns) TQ-220AC RURP30100 PDF

    RUR30100

    Abstract: RURP30100 fast recovery diode 1000v 30A
    Text: RURP30100 interdi Data Sheet Ja nu a ry 2000 File N u m b e r 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery • U Itrafast with Soft • Operating Temperature. 175°C


    OCR Scan     		RURP30100 RURP30100 110ns) TA09904. O-22QAC RUR30100 RUR30100 fast recovery diode 1000v 30A PDF