RF Amplifier 500w 175 mhz
Abstract: ft3000m MIMIC control panel CPI Helix tube VTG6292 500w amplifier a 40 watt power supply 500W D Amplifier 2780C
Text: CPI 500W S/C-Band TWT Amplifier for Instrumentation Applications S/C - Band The VZS/C-2780C2 S/C-Band 500 watt TWT High Power Amplifier features high efficiency, small size and an integral computer interface. Safety Provides 500 watts of power in the 2.0 to
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VZS/C-2780C2
19-inch
design40
RF Amplifier 500w 175 mhz
ft3000m
MIMIC control panel
CPI Helix tube
VTG6292
500w amplifier
a 40 watt power supply
500W D Amplifier
2780C
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Untitled
Abstract: No abstract text available
Text: High Power S band Drop-in Isolator Renaissance has developed a new low cost, high power, drop-in isolator to protect expensive amplifiers from unwanted reflected power levels at S band frequencies. Covering 2.7 – 2.9 GHz, this isolator provides a VSWR of
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz
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MGF2445A
MGF2445A,
12GHz
450mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz
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MGF2407A
MGF2407A,
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MGF2430A
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz
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MGF2430A
MGF2430A,
300mA
MGF2430A
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz
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MGF2430A
MGF2430A,
300mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz
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MGF2407A
MGF2407A,
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MGF2415
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz
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MGF2415A
MGF2415A,
150mA
MGF2415
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz
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MGF2445A
MGF2445A,
12GHz
450mA
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MGF2415A
Abstract: MGF2430A
Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz
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MGF2415A
MGF2415A,
150mA
MGF2415A
MGF2430A
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Untitled
Abstract: No abstract text available
Text: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • Aethercomm P/N SSPA 2.7-3.2-30 is a high power S 30 Watts Minimum Linear Power @ 85 C Base Plate band solid state power amplifier that operates from 2.7 to 3.2 GHz. It offers a minimum of 30 watts of
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MGF1451A
Abstract: No abstract text available
Text: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Low Noise MES FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION S to Ku band power Amplifiers
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MGF1451A
MGF1451A
13dBm
12GHz
Decl/2006
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems
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IBP3135M150
IBP3135M150
IBP3135M150-REV-NC-DS-REV-NC
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FMM5049
Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Text: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=41.0dBm typ. ・High Linear Gain: GL=33.0dB (typ.) ・Broad Band: 1.8~2.3GHz ・Hermetically sealed Package DESCRIPTION The FMM5049VT is a high-gain wide-band three-stage MMIC amplifier
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FMM5049VT
FMM5049VT
FMM5049
S-Band Power Amplifier
S-Band high Power Amplifier
S-band mmic
MMIC POWER AMPLIFIER S-BAND
MMIC s-band amplifier
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Untitled
Abstract: No abstract text available
Text: Part Number: IBP3135MH200 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3135MH200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth
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IBP3135MH200
IBP3135MH200
IBP3135MH200-REV-PR1-DS-REV-NC
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SSPA
Abstract: 500 watt RF amplifier GHz SSPA C Band x band high power amplifier 2.45 Ghz power amplifier 45 dbm SSPA-2227-80 s-band 50 Watt power amplifier SSPA 11 GHz Aethercomm x band sspa
Text: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • • • • Aethercomm P/N SSPA 2227-80 is a high power, S Band, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 2.2 to 2.7 GHz. This Class AB SSPA offers
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w7-80
SSPA
500 watt RF amplifier GHz
SSPA C Band
x band high power amplifier
2.45 Ghz power amplifier 45 dbm
SSPA-2227-80
s-band 50 Watt power amplifier
SSPA 11 GHz
Aethercomm
x band sspa
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12W SMD
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
12W SMD
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RG1000
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
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MGF0953P
MGF0953P
15GHz
10dBm
15GHz
RG1000
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
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MGF0953P
MGF0953P
15GHz
10dBm
15GHz
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm
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MGF0952P
MGF0952P
15GHz
25dBm
15GHz
700mA
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Untitled
Abstract: No abstract text available
Text: Integra Part Number: IBP2729MH300 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2729MH300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth
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IBP2729MH300
IBP2729MH300
IBP2729MH300-REV-NC-DS-REV-A
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IBP2731M200
Abstract: No abstract text available
Text: Part Number: Integra IBP2731M200 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2731M200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth
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IBP2731M200
IBP2731M200
IBP2731M200-REV-NC-DS-REV-B
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s band
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm
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MGF0952P
MGF0952P
15GHz
25dBm
15GHz
700mA
s band
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