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    S0905 Search Results

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    MEC Switches A/S 2S09-05.0

    EXTENDER SWITCH 5MM HEIGHT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2S09-05.0 Bag 2,445 1
    • 1 $0.79
    • 10 $0.719
    • 100 $0.6514
    • 1000 $0.58998
    • 10000 $0.55046
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    Newark 2S09-05.0 Bulk 1,142 10
    • 1 -
    • 10 $0.625
    • 100 $0.607
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    MEC Switches A/S 2SS09-05.0

    5 SERIES 5MM EXTENDER
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    DigiKey 2SS09-05.0 Bulk 985 1
    • 1 $0.9
    • 10 $0.818
    • 100 $0.7406
    • 1000 $0.67071
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    Newark 2SS09-05.0 Bulk 672 10
    • 1 -
    • 10 $0.773
    • 100 $0.686
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    Hammond Manufacturing 1481WN4SS0905

    WINDOW NEMA4 STEEL 10.7X7.19
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    DigiKey 1481WN4SS0905 Box 1 1
    • 1 $280.58
    • 10 $251.012
    • 100 $251.012
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    Mouser Electronics 1481WN4SS0905
    • 1 $251.01
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    Newark 1481WN4SS0905 Bulk 18 1
    • 1 $261.05
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    Powell Electronics 1481WN4SS0905 12 1
    • 1 $418.44
    • 10 $418.44
    • 100 $418.44
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    MEC Switches A/S 1ZCS0905106

    MEC SWITCH 10G
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    DigiKey 1ZCS0905106 Bulk 100
    • 1 -
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    • 100 $2.879
    • 1000 $2.879
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    Samtec Inc FWS-09-05-T-S

    .200" POWER TERMINAL STRIP
    Free Sample
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    DigiKey FWS-09-05-T-S Bulk 1
    • 1 $3.12
    • 10 $3.12
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    Mouser Electronics FWS-09-05-T-S
    • 1 $2.85
    • 10 $2.85
    • 100 $1.97
    • 1000 $1.34
    • 10000 $0.64
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    Newark FWS-09-05-T-S Bulk 1
    • 1 $2.61
    • 10 $2.49
    • 100 $2.09
    • 1000 $1.5
    • 10000 $1.35
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    Sager FWS-09-05-T-S 1
    • 1 $2.85
    • 10 $2.85
    • 100 $1.97
    • 1000 $1.34
    • 10000 $1.2
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    S0905 Datasheets Context Search

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    micro SD Card connector

    Abstract: S0905043
    Text: REV. 1 Z ECN.NO. MODIFY.CONTENT DATE S0905043 In itia l release S0907005 Chang* The Sw iioh P in *09 7/01*09 5 /8 0 11.95 5.975 U55±0.13 1 1 « Amphenol 2.40±o.i5 CD Switch IZ Z t I -Hi ~n 2-0.85±o.ts 8 - 0 . 3 0 ± o.05 7-1.10±o.io 7.70 ±o.w Card, Center-


    OCR Scan     		S0905043 S0907005 micro SD Card connector PDF

    114-008

    Abstract: No abstract text available
    Text: 5 REV. ECN.NO. S0905043 11.95 No.8 of 11.10 7/01'09 2 h WITT g DATE S /2 0 '09 2.40 ±0.15 5 .975 I55±0.t3 MODIFY.CONTENT In itia l teleast Chang* Tht Suriich P in -Ab./ O o -H C5 O 11.10±0.10 r o f 11.95 J B & z a .l j r i —_B B ——H I-C ard C e n i e r - ^ -


    OCR Scan     		S0905043 114-008 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive


    Original     		Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si4916

    Abstract: No abstract text available
    Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		Si4916DY Si4916DY-T1-E3 Si4916DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4916 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET


    Original     		Si7137DP 2002/95/EC Si7137DP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: E-Series Surface Mount Mixer 1600 - 2300 MHz EMRS-1800 V3.00 Features ● ● ● SM-24 LO Power +17 dBm Up to +14 dBm RF Surface Mount Specifications @ 25°C Frequency Range RF LO IF 1600 - 2300 MHz 1600 - 2300 MHz 10 - 200 MHz Conversion Loss dB 1600 - 2300 MHz


    Original     		EMRS-1800 SM-24 EMRS-1800 EMRS-1800TR S0905 PDF

    DG2727

    Abstract: DG2728 DG2747 DG2748 JESD78 Vishay S2 Marking
    Text: DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail


    Original     		DG2727, DG2728, DG2729 DG2729 DG2747/2748/2749 11-Mar-11 DG2727 DG2728 DG2747 DG2748 JESD78 Vishay S2 Marking PDF

    DIODE 0536

    Abstract: Si7738 Si7738DP Si7738DP-T1-E3
    Text: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		Si7738DP Si7738DP-T1-E3 Si7738DP-T1-GE3 11-Mar-11 DIODE 0536 Si7738 PDF

    IRFIB7N50A

    Abstract: SiHFIB7N50A IRFB11N50A SiHFB11N50A SiHFIB7N50A-E3 transistor irfib7n50a
    Text: IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single Available RoHS* COMPLIANT APPLICATIONS D TO-220 FULLPAK • Low Gate Charge Qg Results in Simple Drive


    Original     		IRFIB7N50A, SiHFIB7N50A O-220 2002/95/EC 18-Jul-08 IRFIB7N50A IRFB11N50A SiHFB11N50A SiHFIB7N50A-E3 transistor irfib7n50a PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available


    Original     		Si4866BDY Si4866BDY-T1-E3 Si4866BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES PRODUCT SUMMARY VDS V 40 RDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4904DY Si4904DY-T1-E3 Si4904DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    eaton el 198

    Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
    Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com


    Original     		877-ETN-CARE CA08100004E V3-T2-65 V3-T2-42â V3-T2-52 V3-T2-39â V3-T2-41 V3-T9-254 V3-T7-17 CA08100004Eâ eaton el 198 ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4908DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 5.0 0.070 at VGS = 4.5 V 4.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4908DY Si4908DY-T1-E3 Si4908DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si2305ADS

    Abstract: Si2305ADS-T1-E3 SI2305ADS-T1-GE3
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 Si2305ADS-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4894BDY Si4894BDY-T1-E3 Si4894BDY-T1-GE3 11-Mar-11 PDF

    DG2728

    Abstract: No abstract text available
    Text: DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail


    Original     		DG2727, DG2728, DG2729 DG2729 DG2747/2748/2749 11-Mar-11 DG2728 PDF

    si4840

    Abstract: SI4840BDY-T1-E3 si4840bdy
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 18-Jul-08 si4840 PDF

    Si4916DY-T1-E3

    Abstract: TB 9A DIOD
    Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		Si4916DY 18-Jul-08 Si4916DY-T1-E3 TB 9A DIOD PDF

    64895

    Abstract: No abstract text available
    Text: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR404DP 18-Jul-08 64895 PDF

    Si1473DH

    Abstract: No abstract text available
    Text: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 2.7 0.145 at VGS = - 4.5 V - 2.7 VDS (V) - 30 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si1473DH 2002/95/EC OT-363 SC-70 Si2307CDS-T1-E3 18-Jul-08 PDF

    8670s

    Abstract: No abstract text available
    Text: SPICE Device Model SJ800DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SJ800DP 18-Jul-08 8670s PDF

    Si4906DY-T1-E3

    Abstract: Si4906DY-T1-GE3 SI4906DY
    Text: Si4906DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4906DY Si4906DY-T1-E3 Si4906DY-T1-GE3 18-Jul-08 PDF