S1023 Search Results
S1023 Result Highlights (2)
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TIOS1023DRCR |
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Digital sensor output driver with low residual voltage, integrated surge protection, and 3.3-V LDO 10-VSON -40 to 125 |
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TIOS1023LYAHR |
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Digital sensor output driver with low residual voltage, integrated surge protection, and 3.3-V LDO 12-DSBGA -40 to 125 |
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S1023 Price and Stock
Rochester Electronics LLC DS1023S-2008-BIT PROGRAMMABLE TIMER |
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DS1023S-200 | Tube | 14,964 | 26 |
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Rochester Electronics LLC LS1023ASE7QQBIC MPU QORLQ LS1 1.6GHZ 621BGA |
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LS1023ASE7QQB | Bulk | 6,934 | 5 |
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NIDEC Components SS-10-23NPESWITCH ROTARY DIP DP3T 0.1A 5V |
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SS-10-23NPE | Bag | 3,356 | 1 |
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Maxim Integrated Products DS1023S-25-TIC DEL LN 256TAP 63.75NS 16SOIC |
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DS1023S-25-T | Digi-Reel | 723 | 1 |
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Maxim Integrated Products DS1023S-25-IC DEL LN 256TAP 63.75NS 16SOIC |
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DS1023S-25- | Tube | 410 | 1 |
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S1023 Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
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Datasheet Type |
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S1023 | Bothhand Enterprise | T1/E1/CEPT/ISDN-PRI TRANSFORMER | Original |
S1023 Datasheets Context Search
Catalog Datasheet |
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footprint for transformer
Abstract: electronic transformer footprint transformer transformer construction S1023
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S1023 2350C S1023 footprint for transformer electronic transformer footprint transformer transformer construction | |
S1023Contextual Info: Bothhandusa.com S1023 T1/CEPT/ISDN-PRI TRANSFORMER P/N: S1023 DATA SHEET Page : 1/ 1 Feature l l l l l l l Dual SMT package contains both transmit and receive transformers. Common footprint and pinout with a choice of operating temperature ranges. Models matched to leading transceiver ICs. |
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S1023 S1023 2350C | |
S1023
Abstract: footprint for transformer 141ct
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S1023 2350C 141CT 1500Vrms. footprint for transformer 141ct | |
IRFS11N50A
Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf
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IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf | |
C1841
Abstract: c1871 c1118 C1861 B59022-S1120-A70 C1851 C1831 B59025-S1120-A70 B59022S1120A70 B59861-C1120-A70
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OCR Scan |
C1831 C1841 C1851 C1861 C1871 B59831-C1120-A70 B59841-C1120-A70 B59851-C1120-A70 B59861-C1120-A70 B59871-C1120-A70 c1118 B59022-S1120-A70 B59025-S1120-A70 B59022S1120A70 | |
EC2 WS-501
Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
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OCR Scan |
250ns 250ns. WS-20110 WS-20120 WS-20130 WS-20140 WS-20150 WS-20160 WS-201 EC2 WS-501 WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 | |
DP418C
Abstract: DP420C S1024AS-100M S1024AS-4R3M S1023AS-150M S1023AS
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DP418C DP420C DP418C) DP420C) DP418C: DP420C: DP418C S1023AS-4R7M S1023AS-6R8M S1023AS-100M DP420C S1024AS-100M S1024AS-4R3M S1023AS-150M S1023AS | |
transistor B1204
Abstract: b1045 b1184 B1204 PTC Thermistor S1024 transistor b1045 transistor b1184 ptc S1122 B1076 PTC S1024
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CSGAContextual Info: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy. |
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S7019-1009 S7019-1009 SE-171 KMPD1033E02 CSGA | |
CSGAContextual Info: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy. |
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S7019-1009 S7019-1009 SE-171 KMPD1033E03 CSGA | |
Contextual Info: IMAGE SENSOR CCD area image sensor S7017 series Four-stage TE-cooled, front-illuminated FFT-CCDs S7017 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7017 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes |
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S7017 SE-171 KMPD1030E04 | |
SU70Contextual Info: High Linearity Position Sensing Detector Part Number: S1-0236 Description: 1L10_SU70 The SiTek 1L10 functions according to the Lateral Effect Photodiode principle. It is an analogue device and therefore displays excellent position resolution. The resolution is determined by the system signal-to-noise ratio. |
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S1-0236 SU70 | |
C7027
Abstract: C7557 S7017 S7017-1007 S7017-1008 S7847 S7847-1007 S7847-1008 ISV75
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C7027 C7027 S7017/S7847 SE-171 KACC1069E04 C7557 S7017 S7017-1007 S7017-1008 S7847 S7847-1007 S7847-1008 ISV75 | |
S1144
Abstract: s1188 151CT S1076 S1031 S1036 Enterprise 1500 S114 S1023 S1024
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S1030 S1031 S1032 S1144 s1188 151CT S1076 S1031 S1036 Enterprise 1500 S114 S1023 S1024 | |
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Contextual Info: High Linearity Position Sensing Detector Part Number: S1-0236 Description: 1L10_SU70 5IF 4J5FL - GVODUJPOT BDDPS EJOHUPUIF-BUFSBM&GGFDU1IPUPEJPEFQSJO DJQMF *UJTBOBOBMPHVFEFWJDFBOEUIFSFGPSF EJTQMBZTFYDFMMFOUQPTJUJPOSFTPMVUJPO 5IF SFTPMVUJPOJTEFUFSNJOFECZUIFTZTUFNTJH |
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S1-0236 | |
v6003Contextual Info: SQ1470EH Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd |
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SQ1470EH 2002/95/EC AEC-Q101 OT-363 SC-70 SC-70 SQ1470EH-T1-GE3 11-Mar-11 v6003 | |
relay lad1
Abstract: lad1 relay CNT17 OVF20 2451B LA01 sia to sms ATT1S04 LS259 54-057
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ATT1RX04 ATT1RX04 05002b. relay lad1 lad1 relay CNT17 OVF20 2451B LA01 sia to sms ATT1S04 LS259 54-057 | |
DP418C
Abstract: DP420C S1024AS-100M S1024AS-4R3M
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DP418C DP420C DP418C) DP420C) DP418C: DP420C: DP418C S1023AS-100M S1023AS-150M S1023AS-470M DP420C S1024AS-100M S1024AS-4R3M | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
sq1470eh-t1-ge3Contextual Info: SQ1470EH Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd |
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SQ1470EH 2002/95/EC AEC-Q101 OT-363 SC-70 SQ1470EH-T1-GE3 18-Jul-08 sq1470eh-t1-ge3 | |
Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B A Microchip Technology Company Preliminary Specification The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced MultiPurpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design |
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SST38VF6401B SST38VF6402B SST38VF6403B SST38VF6404B SST38VF6401B/6402B/6403B/6404B SST38VF6401B/6402B/6403B/6404B DS25002A | |
Contextual Info: 64 Mbit x16 Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 SST38VF640x2.7V 64Mb (x16) MPF+ memories Advance Information FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability |
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SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404 SST38VF640x2 128-bit S71309-02-000 | |
Contextual Info: SPICE Device Model SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS478DN 18-Jul-08 | |
Si2318CDSContextual Info: SPICE Device Model Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si2318CDS 18-Jul-08 |