SIS478DN Search Results
SIS478DN Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
Datasheet Type |
PDF |
PDF Size |
Page count |
---|---|---|---|---|---|---|---|
SIS478DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 1212-8 | Original | 13 |
SIS478DN Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
---|---|---|---|
Contextual Info: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
SiS478DN 2002/95/EC SiS478DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiS478DN 18-Jul-08 | |
Contextual Info: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
SiS478DN 2002/95/EC SiS478DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
151801
Abstract: 28604 AN609 1.4461
|
Original |
SiS478DN AN609, 8430u 1922u 1967m 0507m 2230m 2910m 2132m 01-Sep-10 151801 28604 AN609 1.4461 | |
Contextual Info: SPICE Device Model SiS478DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiS478DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
SiS478DN 2002/95/EC SiS478DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
SiS478DN 2002/95/EC SiS478DN-T1-GE3 11-Mar-11 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
|
Original |
Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |