67341
Abstract: si4403C si4403
Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21
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Original
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Si4403CDY
2002/95/EC
Si4403CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
67341
si4403C
si4403
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PDF
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sir662dp
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
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Original
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21
|
Original
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Si4403CDY
2002/95/EC
Si4403CDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
67341
Abstract: No abstract text available
Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21
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Original
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Si4403CDY
2002/95/EC
Si4403CDY-T1-GE3
11-Mar-11
67341
|
PDF
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S11074
Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground
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Original
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S11000
MIL-PRF83446
MIL-STD-981,
MIL-STD-202,
S11074
S11031
S11007
S11048
S11030
M83446
S11100
m83446/11
S11092
S11065
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8
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Original
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Si4501BDY
2002/95/EC
Si4501BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8
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Original
|
Si4501BDY
2002/95/EC
Si4501BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
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Original
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SiR814DP
2002/95/EC
SiR814DP-T1-GE3
11-Mar-11
|
PDF
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SI4463
Abstract: SI4463CDY
Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21
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Original
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Si4463CDY
2002/95/EC
Si4463CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4463
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PDF
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marking G2
Abstract: si3993
Text: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si3993CDV
2002/95/EC
Si3993CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking G2
si3993
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21
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Original
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Si1034CX
2002/95/EC
SC-89
11-Mar-11
|
PDF
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sir640
Abstract: made 314 vishay
Text: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification
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Original
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SiR640DP
2002/95/EC
SiR640DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sir640
made 314 vishay
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21
|
Original
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Si4463CDY
2002/95/EC
Si4463CDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8
|
Original
|
Si4501BDY
2002/95/EC
Si4501BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si4403CDY
2002/95/EC
Si4403CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
|
Original
|
SiR814DP
2002/95/EC
SiR814DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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SOT563F
Abstract: Si1034CX-T1-GE3
Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21
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Original
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Si1034CX
2002/95/EC
SC-89
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SOT563F
Si1034CX-T1-GE3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification
|
Original
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SiR640DP
2002/95/EC
SiR640DP-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
|
Original
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21
|
Original
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Si4463CDY
2002/95/EC
Si4463CDY-T1-GE3
11-Mar-11
|
PDF
|
marking 3800 so8
Abstract: No abstract text available
Text: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
|
Original
|
SiR814DP
2002/95/EC
SiR814DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking 3800 so8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification
|
Original
|
SiR640DP
2002/95/EC
SiR640DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21
|
Original
|
Si4463CDY
2002/95/EC
Si4463CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si3993CDV
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|