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    SI3993CDV Search Results

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    SI3993CDV Price and Stock

    Vishay Siliconix SI3993CDV-T1-GE3

    MOSFET 2P-CH 30V 2.9A 6TSOP
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    DigiKey SI3993CDV-T1-GE3 Cut Tape 40,408 1
    • 1 $0.58
    • 10 $0.387
    • 100 $0.58
    • 1000 $0.18771
    • 10000 $0.18771
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    SI3993CDV-T1-GE3 Digi-Reel 40,408 1
    • 1 $0.58
    • 10 $0.387
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    • 1000 $0.18771
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    SI3993CDV-T1-GE3 Reel 39,000 3,000
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    RS SI3993CDV-T1-GE3 Bulk 20
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    Vishay Intertechnologies SI3993CDV-T1-GE3

    MOSFETs -30V Vds 20V Vgs TSOP-6
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    Mouser Electronics SI3993CDV-T1-GE3 38,054
    • 1 $0.49
    • 10 $0.416
    • 100 $0.289
    • 1000 $0.184
    • 10000 $0.144
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    Verical SI3993CDV-T1-GE3 252,000 3,000
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    SI3993CDV-T1-GE3 3,000 3,000
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    Arrow Electronics SI3993CDV-T1-GE3 252,000 20 Weeks 3,000
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    SI3993CDV-T1-GE3 3,000 20 Weeks 3,000
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    Newark SI3993CDV-T1-GE3 Reel 3,000
    • 1 $0.194
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    • 10000 $0.175
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    SI3993CDV-T1-GE3 Cut Tape 3,000
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    TTI SI3993CDV-T1-GE3 Reel 12,000 3,000
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    Avnet Asia SI3993CDV-T1-GE3 22 Weeks 3,000
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    Chip1Stop SI3993CDV-T1-GE3 252,000
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    SI3993CDV-T1-GE3 3,000
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    EBV Elektronik SI3993CDV-T1-GE3 3,000 21 Weeks 3,000
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    New Advantage Corporation SI3993CDV-T1-GE3 3,000 1
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    Others SI3993CDVTGE3

    AVAILABLE EU
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    ComSIT USA SI3993CDVTGE3 6,000
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    Vishay Intertechnologies SI3993CDVT1GE3

    DUAL P-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI3993CDVT1GE3 11,688
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    Vishay Huntington SI3993CDV-T1-GE3

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    NexGen Digital SI3993CDV-T1-GE3 4
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    Win Source Electronics SI3993CDV-T1-GE3 38,490
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    • 100 $1.334
    • 1000 $1.084
    • 10000 $1.084
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    SI3993CDV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3993CDV-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 2.9A 6-TSOP Original PDF

    SI3993CDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI3993CDV-T1-GE3

    Abstract: si3993dvt1e3 si3993dv-t1-e3 SI3993CDV
    Text: Specification Comparison Vishay Siliconix Si3993CDV vs. Si3993DV Description: Package: Pin Out: Dual P-Channel, 30 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3993CDV-T1-GE3 replaces Si3993DV-T1-GE3 Si3993CDV-T1-GE3 replaces Si3993DV-T1-E3


    Original
    PDF Si3993CDV Si3993DV Si3993CDV-T1-GE3 Si3993DV-T1-GE3 Si3993DV-T1-E3 23-Mar-11 si3993dvt1e3

    marking G2

    Abstract: si3993
    Text: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3993CDV 2002/95/EC Si3993CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking G2 si3993

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3993CDV 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3993CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si3993CDV AN609, 6334u 2142u 7360m 3984u 6013u 5871m 8879m

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3993CDV 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3993CDV 2002/95/EC Si3993CDV-T1-GE3 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836