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    S11052 Price and Stock

    ECS International Inc ECS-110.5-20-5PX-TR

    CRYSTAL 11.0592MHZ 20PF SMD
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    DigiKey ECS-110.5-20-5PX-TR Digi-Reel 89,675 1
    • 1 $0.29
    • 10 $0.25
    • 100 $0.2176
    • 1000 $0.1995
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    Avnet Americas ECS-110.5-20-5PX-TR Reel 6,000 8 Weeks 1,000
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    Newark ECS-110.5-20-5PX-TR Cut Tape 442 1
    • 1 $0.416
    • 10 $0.305
    • 100 $0.266
    • 1000 $0.224
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    Bristol Electronics ECS-110.5-20-5PX-TR 500
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    Avnet Abacus ECS-110.5-20-5PX-TR Reel 10 Weeks 1,000
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    Avnet Asia ECS-110.5-20-5PX-TR 8 Weeks 1,000
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    • 1000 $0.19737
    • 10000 $0.18519
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    Component Electronics, Inc ECS-110.5-20-5PX-TR 882
    • 1 $0.77
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    • 100 $0.58
    • 1000 $0.5
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    New Advantage Corporation ECS-110.5-20-5PX-TR 30,000 1
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    ECS International Inc ECS-110.5-20-7SX-TR

    CRYSTAL 11.0592MHZ 20PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-110.5-20-7SX-TR Digi-Reel 11,036 1
    • 1 $3.04
    • 10 $2.645
    • 100 $2.2986
    • 1000 $2.08408
    • 10000 $2.08408
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    ECS-110.5-20-7SX-TR Cut Tape 11,036 1
    • 1 $3.04
    • 10 $2.645
    • 100 $2.2986
    • 1000 $2.08408
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    ECS-110.5-20-7SX-TR Reel 11,000 1,000
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    • 1000 $2.05521
    • 10000 $2.05521
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    ECS International Inc ECS-110.5-20-5P-TR

    CRYSTAL 11.0592MHZ 20PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-110.5-20-5P-TR Cut Tape 10,089 1
    • 1 $0.5
    • 10 $0.431
    • 100 $0.3749
    • 1000 $0.3399
    • 10000 $0.3399
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    ECS-110.5-20-5P-TR Digi-Reel 10,089 1
    • 1 $0.5
    • 10 $0.431
    • 100 $0.3749
    • 1000 $0.3399
    • 10000 $0.3399
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    Bristol Electronics ECS-110.5-20-5P-TR 4,440
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    ECS-110.5-20-5P-TR 900
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    ECS International Inc ECS-110.5-20-4X

    CRYSTAL 11.0592MHZ 20PF TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-110.5-20-4X Bulk 6,208 1
    • 1 $0.59
    • 10 $0.512
    • 100 $0.59
    • 1000 $0.38638
    • 10000 $0.33582
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    Newark ECS-110.5-20-4X Bulk 1,000 1
    • 1 $0.676
    • 10 $0.52
    • 100 $0.454
    • 1000 $0.362
    • 10000 $0.362
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    Avnet Abacus ECS-110.5-20-4X 12 Weeks 1,000
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    New Advantage Corporation ECS-110.5-20-4X 800 1
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    ECS International Inc ECS-110.5-20-5PXDU-TR

    CRYSTAL 11.0592MHZ 20PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-110.5-20-5PXDU-TR Reel 6,000 1,000
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    • 1000 $0.52907
    • 10000 $0.33532
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    Avnet Americas ECS-110.5-20-5PXDU-TR Reel 12 Weeks 1,000
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    Master Electronics ECS-110.5-20-5PXDU-TR
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    • 1000 $0.56
    • 10000 $0.218
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    New Advantage Corporation ECS-110.5-20-5PXDU-TR 3,000 1
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    • 1000 $0.3069
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    Find more S11052 price and stock on Findchips.com

    S11052 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pd 223

    Abstract: SiHP18N50C SiHP18N50C-E3
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 11-Mar-11 pd 223

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ34, SiHLZ34 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRLZ24

    Abstract: No abstract text available
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRLZ24

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ34, SiHLZ34 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    S11074

    Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
    Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original     		PDF S11000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S11074 S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065

    IRFZ40PBF

    Abstract: No abstract text available
    Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements


    Original     		PDF IRFZ40, SiHFZ40 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFZ40PBF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


    Original     		PDF IRLZ44, SiHLZ44 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRLZ24

    Abstract: SiHLZ24 SiHLZ24-E3
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 11-Mar-11 IRLZ24 SiHLZ24-E3

    S11052

    Abstract: dil 24 MIL-HDBK-217-FN2
    Text: IMX 4 Series 4 Watt DC-DC Converters Input voltage ranges up to 121 V DC 1 or 2 outputs up to 48 V DC Up to 2000 V DC I/O electric strength test • Short circuit protection • DIL 24 Case with 8.5 mm profile Selection chart Output 1 Uo nom Io nom Output 2


    Original     		PDF 170ries S11052 S11052 dil 24 MIL-HDBK-217-FN2

    IMX 140

    Abstract: No abstract text available
    Text: IMX 4 Series 4 Watt DC-DC Converters Input voltage ranges up to 121 V DC 1 or 2 outputs up to 48 V DC Up to 2000 V DC I/O electric strength test • Short circuit protection • DIL 24 Case with 8.5 mm profile Selection chart Output 1 Uo nom Io nom [V DC]


    Original     		PDF S11052 IMX 140

    irlz44

    Abstract: No abstract text available
    Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


    Original     		PDF IRLZ44, SiHLZ44 2002/95/EC O-220AB O-220emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irlz44

    Untitled

    Abstract: No abstract text available
    Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


    Original     		PDF IRLZ44, SiHLZ44 2002/95/EC O-220AB O-220Aelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements


    Original     		PDF IRFZ40, SiHFZ40 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    date code format analog devices

    Abstract: S11052 ANALOG DEVICES DATE CODE anomaly ADIS16209 Example source code for implementing
    Text: Silicon Anomaly High Accuracy, Dual-Axis Digital Inclinometer and Accelerometer ADIS16209 This anomaly list describes the known bugs, anomalies, and workarounds for the ADIS16209. Analog Devices, Inc., is committed, through future silicon revisions, to continuously improve silicon functionality. Analog Devices tries


    Original     		PDF ADIS16209 ADIS16209. er001] ADIS16209 S11052-0-9/12 date code format analog devices S11052 ANALOG DEVICES DATE CODE anomaly Example source code for implementing

    IRLZ24

    Abstract: No abstract text available
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRLZ24

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB O-220AB SiHP18N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB O-220AB SiHP18N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ34, SiHLZ34 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11


    Original     		PDF IRFZ24, SiHFZ24 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11


    Original     		PDF IRFZ24, SiHFZ24 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12