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    S1108 Search Results

    S1108 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMCS1108A1BQDR Texas Instruments ±100V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 Visit Texas Instruments
    TMCS1108A3UQDR Texas Instruments ±100V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 Visit Texas Instruments
    TMCS1108A2UQDRQ1 Texas Instruments AEC-Q100, ±100-V isolated Hall-effect current sensor with internal reference 8-SOIC -40 to 125 Visit Texas Instruments
    TMCS1108A1BQDRQ1 Texas Instruments AEC-Q100, ±100-V isolated Hall-effect current sensor with internal reference 8-SOIC -40 to 125 Visit Texas Instruments
    TMCS1108A3BQDR Texas Instruments ±100V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 Visit Texas Instruments
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    S1108 Price and Stock

    Texas Instruments TMCS1108A1BQDRQ1

    SENSOR CURRENT HALL 45A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1108A1BQDRQ1 Reel 32,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.23875
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    Texas Instruments TMCS1108A2UQDRQ1

    SENSOR CURRENT HALL EFFECT 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1108A2UQDRQ1 Cut Tape 13,383 1
    • 1 $3.12
    • 10 $3.12
    • 100 $1.9124
    • 1000 $1.4993
    • 10000 $1.4993
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    TMCS1108A2UQDRQ1 Digi-Reel 13,383 1
    • 1 $3.12
    • 10 $3.12
    • 100 $1.9124
    • 1000 $1.4993
    • 10000 $1.4993
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    TMCS1108A2UQDRQ1 Reel 7,500 2,500
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    • 10000 $1.23875
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    STMicroelectronics TS110-8A1-AP

    SCR 800V 1.25A TO92
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    DigiKey TS110-8A1-AP Cut Tape 6,815 1
    • 1 $0.85
    • 10 $0.568
    • 100 $0.85
    • 1000 $0.28407
    • 10000 $0.28407
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    TS110-8A1-AP Ammo Pack 6,000 2,000
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    • 10000 $0.22688
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    Avnet Americas TS110-8A1-AP Bulk 15 Weeks, 3 Days 1
    • 1 $0.6
    • 10 $0.514
    • 100 $0.369
    • 1000 $0.294
    • 10000 $0.294
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    Newark TS110-8A1-AP Bulk 966 1
    • 1 $0.213
    • 10 $0.213
    • 100 $0.213
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    STMicroelectronics TS110-8A1-AP 2,868 1
    • 1 $0.42
    • 10 $0.37
    • 100 $0.29
    • 1000 $0.26
    • 10000 $0.26
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    TME TS110-8A1-AP 1
    • 1 $0.766
    • 10 $0.504
    • 100 $0.405
    • 1000 $0.361
    • 10000 $0.361
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    Avnet Silica TS110-8A1-AP 17 Weeks 2,000
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    Chip1Stop TS110-8A1-AP 603
    • 1 -
    • 10 $0.318
    • 100 $0.251
    • 1000 $0.251
    • 10000 $0.251
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    TS110-8A1-AP 50
    • 1 -
    • 10 $0.333
    • 100 $0.333
    • 1000 $0.333
    • 10000 $0.333
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    Texas Instruments TMCS1108A3UQDR

    SENSOR CURRENT HALL EFFECT 8SOIC
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    DigiKey TMCS1108A3UQDR Digi-Reel 3,420 1
    • 1 $2.69
    • 10 $2.69
    • 100 $1.6516
    • 1000 $1.29482
    • 10000 $1.29482
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    TMCS1108A3UQDR Cut Tape 3,420 1
    • 1 $2.69
    • 10 $2.69
    • 100 $1.6516
    • 1000 $1.29482
    • 10000 $1.29482
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    Mouser Electronics TMCS1108A3UQDR 2,998
    • 1 $2.3
    • 10 $1.8
    • 100 $1.41
    • 1000 $1.09
    • 10000 $0.876
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    Texas Instruments TMCS1108A3BQDRQ1

    SENSOR CUR HALL 11.25A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1108A3BQDRQ1 Digi-Reel 2,676 1
    • 1 $3.12
    • 10 $3.12
    • 100 $1.9124
    • 1000 $1.4993
    • 10000 $1.4993
    		Buy Now
    TMCS1108A3BQDRQ1 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.23875
    		Buy Now
    Mouser Electronics TMCS1108A3BQDRQ1 2,588
    • 1 $2.47
    • 10 $2.02
    • 100 $1.43
    • 1000 $1.13
    • 10000 $1.04
    		Buy Now
    Find more S1108 price and stock on Findchips.com

    S1108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3424CDV 2002/95/EC Si3424CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    DG201BDQ-T1-E3

    Abstract: No abstract text available
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original     		PDF DG201B, DG202B DG202B DG201A, DG202. DG201B 2011/65/EU 2002/95/EC. DG201BDQ-T1-E3

    si2329

    Abstract: SI2329DS
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329

    Untitled

    Abstract: No abstract text available
    Text: Product is End of Life 12/2014 Si9988 Vishay Siliconix Buffered H-Bridge Driver with Integrate MOSFET DESCRIPTION FEATURES The Si9988 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 0.65 A at VDD = 5 V room temperature at


    Original     		PDF Si9988 Si9988 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1428EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


    Original     		PDF S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128

    Untitled

    Abstract: No abstract text available
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original     		PDF DG201B, DG202B DG202B DG201A, DG202. DG201B 11-Mar-11

    Si4340DDY

    Abstract: No abstract text available
    Text: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8


    Original     		PDF Si4340DDY 2002/95/EC SO-14 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7112DN Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7112DN 2002/95/EC Si7112DN-T1-E3 Si7112DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S11074

    Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
    Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original     		PDF S11000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S11074 S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065

    SC-89

    Abstract: Si1024X
    Text: Si1024X Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1024X 2002/95/EC OT-563 SC-89 11-Mar-11 SC-89

    DG201A

    Abstract: DG201B DG201BAK DG201BDJ DG201BDJ-E3 DG202 DG202B DG202BAK DG202BDJ
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original     		PDF DG201B, DG202B DG202B DG201A, DG202. DG201B 11-Mar-11 DG201A DG201BAK DG201BDJ DG201BDJ-E3 DG202 DG202BAK DG202BDJ

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR818DP 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA923EDJ 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Product is End of Life 12/2014 Si9987 Vishay Siliconix Buffered H-Bridge Driver with Integrate MOSFET DESCRIPTION FEATURES The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 5 V room temperature at switching


    Original     		PDF Si9987 Si9987 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 2014.7 「ファインメット 」 EMC 総合カタログ 「ファインメット®」および「FINEMET®」は日立金属（株）の登録商標です。 ITやエレクトロニクス機器の小型化高性能化に伴い、電磁ノイズ対策は


    Original     		PDF jp/prod/prod02/prod02

    socket s1

    Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND


    Original     		PDF S1-90 S1-82 S1-79 S1-77 TTL10 TTL12 TTL14 TTL18 TTL44 SGND/D15 socket s1 diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18

    SI2329DS-T1-GE3

    Abstract: No abstract text available
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original     		PDF DG201B, DG202B DG202B DG201A, DG202. DG201B 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original     		PDF DG201B, DG202B DG202B DG201A, DG202. DG201B 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4920EY Vishay Siliconix Dual N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQ4920EY 11-Mar-11

    Si2338DS

    Abstract: No abstract text available
    Text: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2338DS 2002/95/EC OT-23 Si2338DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24


    OCR Scan     		PDF 1101T S1102T S1103T S1104T S1105T S1106T S1107T S1108T S1109T S1110T

    Untitled

    Abstract: No abstract text available
    Text: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7


    OCR Scan     		PDF S1103 S1104 S1106 DS1107 S1108 S1185 AD1185 1N4148, 1N914B, 1N5282