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    SI2338DS Price and Stock

    Vishay Siliconix SI2338DS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI2338DS-T1-BE3 Cut Tape 2,229 1
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    Vishay Siliconix SI2338DS-T1-GE3

    MOSFET N-CH 30V 6A SOT23
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    Vishay Intertechnologies SI2338DS-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2338DS-T1-GE3)
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    Avnet Americas SI2338DS-T1-GE3 Reel 6,000 20 Weeks 3,000
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    SI2338DS-T1-GE3 Ammo Pack 19 Weeks, 1 Days 1
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    Mouser Electronics SI2338DS-T1-GE3 11,538
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    Verical SI2338DS-T1-GE3 6,000 3,000
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    SI2338DS-T1-GE3 3,000 20 Weeks 3,000
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    Newark SI2338DS-T1-GE3 Reel 36,000 3,000
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    SI2338DS-T1-GE3 Cut Tape 3,482 1
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    SI2338DS-T1-GE3 Cut Tape 3,000 1
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    TTI SI2338DS-T1-GE3 Reel 9,000 3,000
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    TME SI2338DS-T1-GE3 2,760 1
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    Chip1Stop SI2338DS-T1-GE3 6,000
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    EBV Elektronik SI2338DS-T1-GE3 21 Weeks 3,000
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    Vishay Intertechnologies SI2338DS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET (Alt: SI2338DS-T1-BE3)
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    Avnet Americas SI2338DS-T1-BE3 20 Weeks 3,000
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    Mouser Electronics SI2338DS-T1-BE3 73,943
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    Newark SI2338DS-T1-BE3 Bulk 3,000
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    TTI SI2338DS-T1-BE3 Reel 27,000 3,000
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    Vishay Intertechnologies SI2338DS-T1-GE3.

    Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:2.5W; No. Of Pins:3Pins Rohs Compliant: No |Vishay SI2338DS-T1-GE3.
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    Newark SI2338DS-T1-GE3. Reel 3,000
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    SI2338DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2338DS-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 6A SOT23 Original PDF

    SI2338DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2338DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2338DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2338DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si2338DS

    Abstract: No abstract text available
    Text: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2338DS 2002/95/EC OT-23 Si2338DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si2338

    Abstract: Si2338DS
    Text: SPICE Device Model Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2338DS 11-Mar-11 si2338

    Si2338DS

    Abstract: si2338 marking code vishay SILICONIX sot-23 si23
    Text: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2338DS OT-23 2002/95/EC Si2338DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si2338 marking code vishay SILICONIX sot-23 si23

    si2338

    Abstract: Si2338DS
    Text: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2338DS OT-23 2002/95/EC Si2338DS-T1-GE3 11-Mar-11 si2338

    Si2338DS

    Abstract: No abstract text available
    Text: Si2338DS-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2338DS-GE3 AN609, 5622u 5465m 7219m 5524u 6375m 9483m 7920m 10-May-11 Si2338DS

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836