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    SI23 Price and Stock

    Vishay Siliconix SI2333CDS-T1-E3

    MOSFET P-CH 12V 7.1A SOT23-3
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    DigiKey SI2333CDS-T1-E3 Cut Tape 48,700 1
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    SI2333CDS-T1-E3 Digi-Reel 48,700 1
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    SI2333CDS-T1-E3 Reel 48,000 3,000
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    RS SI2333CDS-T1-E3 Bulk 3,000
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    New Advantage Corporation SI2333CDS-T1-E3 6,000 1
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    Vishay Siliconix SI2343CDS-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI2343CDS-T1-BE3 Cut Tape 6,728 1
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    SI2343CDS-T1-BE3 Digi-Reel 6,728 1
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    SI2343CDS-T1-BE3 Reel 3,000 3,000
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    Vishay Siliconix SI2301BDS-T1-BE3

    P-CHANNEL 2.5-V (G-S) MOSFET
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    DigiKey SI2301BDS-T1-BE3 Digi-Reel 6,715 1
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    SI2301BDS-T1-BE3 Cut Tape 6,715 1
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    SI2301BDS-T1-BE3 Reel 6,000 3,000
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    Vishay Siliconix SI2307BDS-T1-GE3

    MOSFET P-CH 30V 2.5A SOT23-3
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    DigiKey SI2307BDS-T1-GE3 Digi-Reel 4,149 1
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    SI2307BDS-T1-GE3 Cut Tape 4,149 1
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    UMW SI2318A

    SOT-23 N-CHANNEL POWER MOSFETS R
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    DigiKey SI2318A Digi-Reel 2,395 1
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    SI2318A Cut Tape 2,395 1
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    Find more SI23 price and stock on Findchips.com

    SI23 Datasheets (308)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2300 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    SI2300 TY Semiconductor TY Equivalent - N-Channel Enhancement Mode MOSFET - SOT-23 Original PDF
    SI2300DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23 Original PDF
    SI2300-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    SI2301-3A Unknown MOSFET SOT-23 P Channel 20V Original PDF
    Si2301ADS Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301ADS Vishay Telefunken V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET Original PDF
    Si2301ADS-E3 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 Original PDF
    Si2301ADS-T1 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL Original PDF
    Si2301ADS-T1-E3 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL Original PDF
    SI2301A-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    Si2301BD Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 Original PDF
    Si2301BDS SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDST1 Vishay MOSFET,P CHAN,2.5V,SOT23 Original PDF
    Si2301BDS-T1 Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-T1-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 T/R Original PDF
    SI2301BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF
    SI2301BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF
    ...

    SI23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET SOT-23 marking code M2

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2

    si2366

    Abstract: No abstract text available
    Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2366DS AN609, J2523 4374u 1469m 9180m 0805u 5327u 7530m 0215u si2366

    marking L4 mosfet sot23

    Abstract: SI2304
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304

    si2301

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    Si2303CDS

    Abstract: No abstract text available
    Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 Si2303CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    SI2333DS-T1-E3

    Abstract: No abstract text available
    Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si2333DS O-236 OT-23) Si2333DS-T1-E3 Si2333DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2315BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


    Original     		PDF Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    TSS 6672-1

    Abstract: No abstract text available
    Text: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2319CDS AN609, 26-May-10 TSS 6672-1

    si2301cds-t1-ge3

    Abstract: No abstract text available
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3


    Original     		PDF Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1

    Si2329DS

    Abstract: si2329 si23
    Text: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2329DS 11-Mar-11 si2329 si23

    3V30V

    Abstract: 51K3 e515
    Text: B C E7 R6 R5 Opt. R7 TGEN 10 CTRL 5 VREF C3 0.01uF 2 GND E10 C4 0.01uF 14 15 Q1 Si2319DS 2 3 LED+ R8 392k OUT PVIN R13 5.1k R9 Opt. R3 Opt. LED+ R15 Opt. 12 LED+ 330mA E2 ISN ISP 2 SW 1 SW PVIN OUT FB 4 Opt. 3 2 13 8 R10 Opt. PWM SYNC CTRL R11 Opt. 16 OUT


    Original     		PDF V-40V 10MQ060N V-30V Si2319DS LT3518EUF 330mA 3V30V 51K3 e515

    si2329

    Abstract: SI2329DS
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329

    si2300 sot-23

    Abstract: No abstract text available
    Text: Product specification KI2300 SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1


    Original     		PDF KI2300 SI2300) OT-23 si2300 sot-23

    SI2301

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2301 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V


    Original     		PDF SI2301 OT-23 OT-23 SI2301

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11

    Si2333CDS

    Abstract: Si2333CDS-T1-GE3 Si2333C
    Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2333CDS 2002/95/EC O-236 OT-23) Si2333CDS-T1-E3 Si2333CDS-T1-GE3 11-Mar-11 Si2333C

    Si2309DS

    Abstract: Si2309DS-T1
    Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236


    Original     		PDF Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 Si2309DS-T1-GE3 11-Mar-11

    Si2302ADS

    Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE
    Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 11-Mar-11 2A MARKING CODE

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05

    Si2307CDS

    Abstract: No abstract text available
    Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices


    Original     		PDF Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) d 0.033 at VGS = 10 V 5.3 0.038 at VGS = 6 V 4.9 0.043 at VGS = 4.5 V 4.6 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested


    Original     		PDF Si2372DS OT-23 O-236) Si2372DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC


    Original     		PDF Si2377EDS 2002/95/EC O-236 OT-23) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI2304DS marking code SOT-23

    Abstract: A4* marking code A4 MARKING CODE
    Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )


    OCR Scan     		PDF 2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE