Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
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OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
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A5 DIODE
Abstract: A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000
Text: ND102M6L Semiconductor Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]
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ND102M6L
12PDFN
KSD-D5H003-000
Rev00
A5 DIODE
A6 DIODE
DIODE A6
A4 diode
k6 diode
k1 diode
A3 DIODE
S12 MARKING DIODE
K4 diode
KSD-D5H003-000
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S12 MARKING CODE DIODE
Abstract: ND102 s12 diode
Text: ND102 Semiconductor Antenna Switching Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND102 S SOD-923 Outline Dimensions
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ND102
OD-923
KSD-D6E006-001
S12 MARKING CODE DIODE
ND102
s12 diode
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ND102M6L
Abstract: S12 MARKING DIODE triple-band antenna switch
Text: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]
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ND102M6L
12PDFN
KSD-D5H003-001
Rev00
ND102M6L
S12 MARKING DIODE
triple-band antenna switch
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Untitled
Abstract: No abstract text available
Text: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4L
12PDFN
KSD-D5H001-000
Rev00
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S12 MARKING CODE DIODE
Abstract: No abstract text available
Text: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4AL
12PDFN
KSD-D5H002-002
Rev01
S12 MARKING CODE DIODE
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ND102M4L
Abstract: No abstract text available
Text: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4L
12PDFN
KSD-D5H001-000
Rev00
ND102M4L
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Untitled
Abstract: No abstract text available
Text: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]
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ND102M6L
12PDFN
KSD-D5H003-001
Rev00
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4 channel 1 package type antenna switching diode array
Abstract: S12 MARKING CODE DIODE ND102M4AL
Text: ND102M4AL Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4AL
12PDFN
KSD-D5H002-001
Rev01
4 channel 1 package type antenna switching diode array
S12 MARKING CODE DIODE
ND102M4AL
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Untitled
Abstract: No abstract text available
Text: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]
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ND102M4AL
12PDFN
KSD-D5H002-002
Rev01
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
Text: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance
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BAP55L
OD882
sym006
S12 MARKING DIODE
S12 MARKING CODE DIODE
SOD882
BAP55L
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marking code e6
Abstract: No abstract text available
Text: BAP55L Silicon PIN diode Rev. 2 — 5 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals
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BAP55L
OD882
sym006
BAP55L
marking code e6
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE SDT12SF 15KV ksd2076
Text: SDT12SF Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories
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SDT12SF
IEC61000-4-2
OT-23F
KSD-2076-000
Un125
S12 MARKING DIODE
S12 MARKING CODE DIODE
SDT12SF
15KV
ksd2076
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marking S12
Abstract: S12 MARKING DIODE K 2078 S12 MARKING CODE DIODE 15KV SDT12S ksd2078
Text: SDT12S Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories
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SDT12S
IEC61000-4-2
OT-23
KSD-2078-000
marking S12
S12 MARKING DIODE
K 2078
S12 MARKING CODE DIODE
15KV
SDT12S
ksd2078
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C10-A10FX
Abstract: C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X
Text: IRC Interface and general application The new IRC relays Button and lockable lever push-to-test, lift-to-lock Mechanical and LED indication as standard Coil voltage marked on the top of the relay Marking label Optional in-built suppressors circuits and bridge rectifier for AC/DC relays
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E-28923
C10-A10FX
C12-A21BX
220v ac voltage stabilizer circuit
C12-A21FX
C10-A10BX
solid state 220v ac stabilizer
220V AC Automatic Voltage stabilizer
transistor A1232
releco relay 24v dc 10a
C12-A21X
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C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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Untitled
Abstract: No abstract text available
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance
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BF998
BF998R
BF998RW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343R
D-74025
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BBY39
Abstract: S12 MARKING DIODE S12 MARKING CODE DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY39 UHF variable capacitance double diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification
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M3D088
BBY39
MAM169
BBY39
S12 MARKING DIODE
S12 MARKING CODE DIODE
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tvs diode marking code fo
Abstract: semtech tvs SOT23-6L Marking Code s12 S12 MARKING CODE DIODE
Text: _ SMS05 l* ? < 5 F M tjWji T F P H A ugust 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of TVS arrays are designed to protect
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SMS05
SMS24
OT23-6L
tvs diode marking code fo
semtech tvs
SOT23-6L Marking Code s12
S12 MARKING CODE DIODE
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5v tvs
Abstract: SOT23-6L Marking Code S12 MARKING CODE DIODE
Text: m SMS05 I Today’s Results.Tomorrow^ Vision O ctober 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of T V S arrays are designed to protect
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SMS05
SMS24
OT23-6L
5v tvs
SOT23-6L Marking Code
S12 MARKING CODE DIODE
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE diode marking s12 s12 diode BBY39
Text: Short-form product specification Philips Semiconductors Double variable capacitance diode BBY39 QUICK REFERENCE DATA APPLICATIONS • Electronic tuners in satellite TV systems. SYMBOL DESCRIPTION Vr continuous reverse voltage Tj operating junction temperature
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BBY39
S12 MARKING DIODE
S12 MARKING CODE DIODE
diode marking s12
s12 diode
BBY39
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Controlled avalanche rectifiers BASH; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1 technology. • High maximum operating
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BAS12
MAM196
BAS11
134AS11;
BAS11;
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BAS11
Abstract: S12 MARKING CODE DIODE S12 MARKING DIODE BAS12
Text: Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1> technology. • High maximum operating
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BAS11;
BAS12
BAS11
BAS12:
7110fl2b
BAS11
S12 MARKING CODE DIODE
S12 MARKING DIODE
BAS12
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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