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    S1209 Search Results

    S1209 Result Highlights (3)

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    THS1209IDA Texas Instruments 12 Bit, 8 MSPS ADC Dual Ch., DSP/uP Interface, Channel Autoscan, Low Power 32-TSSOP -40 to 85 Visit Texas Instruments Buy
    ADS1209SPW Texas Instruments 16-Bit, 10MHz, 2-Ch, Delta-Sigma Modulator 24-TSSOP -40 to 105 Visit Texas Instruments Buy
    ADS1209SPWR Texas Instruments 16-Bit, 10MHz, 2-Ch, Delta-Sigma Modulator 24-TSSOP -40 to 105 Visit Texas Instruments
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    S1209 Price and Stock

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    ECS International Inc ECS-120-9-42-CKM-TR

    CRYSTAL 12.0000MHZ 9PF SMD
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    DigiKey ECS-120-9-42-CKM-TR Digi-Reel 10,799 1
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    ECS-120-9-42-CKM-TR Cut Tape 10,799 1
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    Mouser Electronics ECS-120-9-42-CKM-TR 16,052
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    Newark ECS-120-9-42-CKM-TR Cut Tape 1,142 1
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    IBS Electronics ECS-120-9-42-CKM-TR 1,000
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    Murata Power Solutions MEV1S1209SC

    DC DC CONVERTER 9V 1W
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    DigiKey MEV1S1209SC Tube 3,975 1
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    Newark MEV1S1209SC Bulk 25
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    TME MEV1S1209SC 1
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    Sager MEV1S1209SC 1
    • 1 $6.03
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    Semtech Corporation GS12090-INTE3Z

    BIDIRECTIONAL 12G UHD-SDI RETIMI
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    DigiKey GS12090-INTE3Z Reel 2,500 2,500
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    GS12090-INTE3Z Digi-Reel 2,500 1
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    • 100 $28.1248
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    GS12090-INTE3Z Cut Tape 2,500 1
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    Newark GS12090-INTE3Z Bulk 2,500
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    Avnet Silica GS12090-INTE3Z 18 Weeks 2,500
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    ECS International Inc ECS-120-9-42X-CKM-TR

    CRYSTAL 12.0000MHZ 9PF SMD
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    DigiKey ECS-120-9-42X-CKM-TR Digi-Reel 1,999 1
    • 1 $1.28
    • 10 $1.113
    • 100 $0.967
    • 1000 $0.87666
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    Mouser Electronics ECS-120-9-42X-CKM-TR 977
    • 1 $1.28
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    • 100 $0.967
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    IBS Electronics ECS-120-9-42X-CKM-TR 1,000
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    Texas Instruments ADS1209SPW

    IC ADC 16BIT SIGMA-DELTA 24TSSOP
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    DigiKey ADS1209SPW Tube 120 1
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    Mouser Electronics ADS1209SPW 130
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    Ameya Holding Limited ADS1209SPW 8,926
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    S1209 Datasheets (1)

    Part
    ECAD Model
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    S1209 Lapp Group CABLE GLAND 2-6MM PG9 POLYAMIDE Original PDF

    S1209 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si APD S9251/S12092シリーズ 近赤外域 λ=900 nm で高感度のAPD 900 nm帯の近赤外域において高感度を実現したSi APDです。光波距離計などの用途に適しています。 特長 用途 近赤外域 (λ=900 nm)で高感度


    Original     		S9251/S12092ã S12092-02 S12092-05 S9251-10 S9251-15 KAPDA0029JB KAPDA0030JB S9251-02 S9251-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si APD S9251/S12092 series High sensitivity in near infrared range λ=900 nm These are Si APDs that offer enhanced 900 nm band near-infrared sensitivity. They are suitable for applications such as optical rangefinders. Features Applications High sensitivity in near infrared range (λ=900 nm)


    Original     		S9251/S12092 S12092-02 S12092-05 S9251-10 S9251-15 KAPD1013E04 PDF

    SI1443EDH

    Abstract: marking code bt S1209
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		Si1443EDH SC-70 Si1443EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code bt S1209 PDF

    si8406

    Abstract: No abstract text available
    Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management


    Original     		Si8406DB Si8406DB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8406 PDF

    Untitled

    Abstract: No abstract text available
    Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain


    Original     		D-82211 KAPD0001E05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET


    Original     		SiB433EDK SC-75-6L-Single SC-75 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration


    Original     		SiHP7N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiP32452, SiP32453 Vishay Siliconix 0.9 V to 2.5 V, 55 mΩ Load Switch in WCSP4 DESCRIPTION FEATURES SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32452 and SiP32453 has low input logic control threshold


    Original     		SiP32452 SiP32453 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		Si1443EDH SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SIHF7N60E

    Abstract: SiHF7N60E-E3
    Text: SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF7N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHF7N60E-E3 PDF

    S1209

    Abstract: SiS890DN
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS890DN SiS890DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1209 PDF

    SiB433EDK

    Abstract: No abstract text available
    Text: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET


    Original     		SiB433EDK SC-75-6L-Single SC-75 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    S1209

    Abstract: SIR870 SiR870ADP
    Text: SPICE Device Model SiR870ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR870ADP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1209 SIR870 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration


    Original     		SiHP7N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V


    Original     		SiZ920DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		Si1443EDH SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    crimper CT 3508

    Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
    Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3442CDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 a RDS(on) () Max. ID (A) 0.027 at VGS = 10 V 8d 0.030 at VGS = 4.5 V 7.5 0.049 at VGS = 2.5 V 6.1 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		Si3442CDV Si3442CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


    Original     		HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A PDF

    s2513

    Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
    Text: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing


    Original     		P-2631996 E146370 LR50370-10 SKINTOP00 s2513 MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438 PDF

    SiP32455

    Abstract: SAC396 sac39
    Text: SiP32454, SiP32455 Vishay Siliconix 0.8 V to 2.5 V, 28 mΩ, Slew Rate Controlled Load Switch in WCSP4 DESCRIPTION FEATURES The SiP32454 and SiP32455 are slew rate controlled integrated high side load switches that operate in the input voltage range from 0.8 V to 2.5 V. The SiP32454 and


    Original     		SiP32454 SiP32455 2011/65/EU 2002/95/EC. 2002/95/EC SAC396 sac39 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management


    Original     		Si8406DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiP32454, SiP32455 Vishay Siliconix 0.8 V to 2.5 V, 28 mΩ, Slew Rate Controlled Load Switch in WCSP4 DESCRIPTION FEATURES The SiP32454 and SiP32455 are slew rate controlled integrated high side load switches that operate in the input voltage range from 0.8 V to 2.5 V. The SiP32454 and


    Original     		SiP32454 SiP32455 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF