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    S1416 Price and Stock

    Panasonic Electronic Components ABS1416419

    SWITCH SNAP ACT SPDT 0.1A 125V
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    DigiKey ABS1416419 Bulk 796 1
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    Panasonic Electronic Components ABS1416413

    SWITCH SNAP ACT SPDT 0.1A 125V
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    Anderson Power Products PM16S1416S32

    CONTACT SOCKET 14-16AWG
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    DigiKey PM16S1416S32 Bulk 9 1
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    Mouser Electronics PM16S1416S32 5,371
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    PEI Genesis PM16S1416S32 5,334 1
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    Jonard Tools MOS-1416

    TOOL INSERTER CMOS-SAFE 14-16PIN
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    Jonard Tools FS-1416

    THE JONARD TOOLS MICRODUCT SCORI
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    S1416 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PTI 30 040 pa

    Abstract: t04 68 3 pin diode sg ag20 LP1 K06 1LPN3 AC03 nec ae02 marking HT15 22 marking ag01 TWN AA 427
    Text: User’s Manual µPD98412 NEASCOT-X15 Advanced ATM Switch LSI Document No. S14169EJ2V0UMJ1 (2nd edition) Date Published October 2000 N CP(K) Printed in Japan 1999 [MEMO] 2 User’s Manual S14169EJ2V0UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    Original     		PD98412 NEASCOT-X15TM) S14169EJ2V0UMJ1 S14169EJ2V0UM00 electri88-6130 PTI 30 040 pa t04 68 3 pin diode sg ag20 LP1 K06 1LPN3 AC03 nec ae02 marking HT15 22 marking ag01 TWN AA 427 PDF

    t04 68 3 pin transistor

    Abstract: MD 202 flame relay AC03 nec alps lcd 14 pin t04 68 3 pin diode transistor z5t S3043 S3044 STM-16 z046
    Text: User’s Manual µPD98414 NEASCOT-P70TM ATM 2.4Gbps SONET Framer Document No. S14166EJ4V0UM00 (4th edition) Date Published December 2001 J CP(K) 1999 1991 Printed in Japan [MEMO] 2 User's Manual S14166EJ4V0UM SUMMARY OF CONTENTS CHAPTER 1 GENERAL .13


    Original     		PD98414 NEASCOT-P70TM) S14166EJ4V0UM00 S14166EJ4V0UM t04 68 3 pin transistor MD 202 flame relay AC03 nec alps lcd 14 pin t04 68 3 pin diode transistor z5t S3043 S3044 STM-16 z046 PDF

    08P06P

    Abstract: 18p06p 30P06P 80p06p 09P06PL 613SPV q67041-s1416 BSS83P ss92 09P06P
    Text: Technical data - P-channel devices Sales Ordering Mar- Configuration VDS code code king BSS 83P Q67041-S1416 YAs BSS 84P YBs BSS 84PW YBs BSO 613SPV BSP 613P BSP 170P BSP 171P BSP 315P SPD 30P06P SPD 18P06P SPD 09P06PL SPD 08P06P SPU 30P06P SPU 18P06P SPU 09P06PL


    Original     		Q67041-S1416 613SPV 30P06P 18P06P 09P06PL 08P06P 08P06P 18p06p 30P06P 80p06p 09P06PL 613SPV BSS83P ss92 09P06P PDF

    S1555

    Abstract: S1509 GRM01 S1416 VT47 GRM015 S1512 SKY65053-377LF-EVB
    Text: DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65053-377LF Block Diagram


    Original     		SKY65053-377LF: SKY65053-377LF 201089D S1555 S1509 GRM01 S1416 VT47 GRM015 S1512 SKY65053-377LF-EVB PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP40N25-60 www.vishay.com Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SUP40N25-60 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2301CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2301CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    3830S

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4284EY www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SQ4284EY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 3830S PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low-Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65051-377LF Block Diagram


    Original     		SKY65051-377LF: SKY65051-377LF 201069D PDF

    ic 313

    Abstract: S3043 S3044
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD98414 2.4 Gbps ATM SONET FRAMER The µPD98414 NEASCOT-P70 is one of ATM LSIs and provides the functions of the TC sublayer of the SONET/SDH-base physical layer of the ATM protocol specified by the ATM Forum. Its main functions include a transmission function for mapping an ATM cell passed from a high-end ATM layer


    Original     		PD98414 NEASCOT-P70) STS-48c/SDH STM-16c ic 313 S3043 S3044 PDF

    S1509

    Abstract: GRM015 S1416 S1512 VT47 GRM01
    Text: DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65053-377LF Block Diagram


    Original     		SKY65053-377LF: SKY65053-377LF 201089C S1509 GRM015 S1416 S1512 VT47 GRM01 PDF

    GRM01

    Abstract: SKY65053-377LF s1416
    Text: PRELIMINARY DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65053-377LF Block Diagram


    Original     		SKY65053-377LF: J-STD-020) SKY65053-377LF SKY65053-37ucts 01089A GRM01 s1416 PDF

    HTA06

    Abstract: hta08 CBA07 HTD12 HTA12 ic 351 HTA09 CBD16 12-PHY HTA01
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PD98412 NEASCOT-X15TM PD98412 S14169J HTA06 hta08 CBA07 HTD12 HTA12 ic 351 HTA09 CBD16 12-PHY HTA01 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC781CD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC781 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. Packaged


    Original     		SiC781CD SiC781 SiC781 MLP66-40L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D


    Original     		IRFL9014, SiHFL9014 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.20 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single Surface mount Available in tape and reel


    Original     		IRLL014, SiHLL014 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFL110, SiHFL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the


    Original     		IRFL110, SiHFL110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    NEC AC08

    Abstract: S3043 S3044
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD98414 2.4 Gbps ATM SONET FRAMER The µPD98414 NEASCOT-P70 is one of ATM LSIs and provides the functions of the TC sublayer of the SONET/SDH-base physical layer of the ATM protocol specified by the ATM Forum. Its main functions include a transmission function for mapping an ATM cell passed from a high-end ATM layer


    Original     		PD98414 NEASCOT-P70ï STS-48c/SDH STM-16c PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1411DH www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si1411DH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1302DL www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si1302DL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP50N03-5m1P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SUP50N03-5m1P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2307CDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2307CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N10-09 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 200 ° MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SUM110N10-09 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP85N15-21 www.vishay.com Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SUP85N15-21 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF