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    S153P Search Results

    S153P Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    74LS153P-E Renesas Electronics Corporation HD74LS Series Visit Renesas Electronics Corporation
    SN74HCS153PWR Texas Instruments Dual 4-line to 1-line data selectors/multiplexers 16-TSSOP -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    S153P Price and Stock

    Texas Instruments SN74HCS153PWR

    IC DATA SELECT/MUX 2X4:1 16TSSOP
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    DigiKey SN74HCS153PWR Cut Tape 2,720 1
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    SN74HCS153PWR Digi-Reel 2,720 1
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    SN74HCS153PWR Reel 2,000
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    Mouser Electronics SN74HCS153PWR 9,739
    • 1 $0.37
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    • 100 $0.157
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    TDK-Lambda Corporation KMS15-3P3

    AC/DC CONVERTER 3.3V 15W
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    DigiKey KMS15-3P3 Bulk 8 1
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    Mouser Electronics KMS15-3P3
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    RS KMS15-3P3 Bulk 10 Weeks 1
    • 1 $58.88
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    Sager KMS15-3P3 1
    • 1 $58.3
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    • 100 $33.16
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    Anytek Technology Corporation Ltd APTS153PEYG00G

    APT 1.5MM2/1-2 PE YG GROUND TERM
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    DigiKey APTS153PEYG00G Box 1
    • 1 $1.56
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    TDK Corporation KMS15-3P3

    AC/DC Power Supply Single-OUT 3.3V 3A 9.9W 4-Pin - Bulk (Alt: KMS15-3P3)
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    Avnet Americas KMS15-3P3 Bulk 10 Weeks 1
    • 1 $59.8928
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    Onyx Healthcare VENUS-153-P73-C1-0800

    SBC Intel Core i5/Celeron Dual Core - Bulk (Alt: VENUS-153-P73-C1-0800)
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    Avnet Americas VENUS-153-P73-C1-0800 Bulk 12 Weeks 100
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    S153P Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S153P Vishay Telefunken Silicon PIN Photodiode Original PDF
    S153P Vishay Telefunken Photodiode, PIN Module, 0.6A/W Sensitivity, 0.1uSec, 2nA Original PDF
    S153P Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    S153P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8464

    Abstract: S153P
    Text: S153P Vishay Semiconductors Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.


    Original
    PDF S153P S153P 18-Jul-08 8464

    Untitled

    Abstract: No abstract text available
    Text: S153P Vishay Semiconductors Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.


    Original
    PDF S153P S153P D-74025 20-May-99

    telefunken s153p

    Abstract: 8464 S153P
    Text: S153P Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation. The large active area combined with a flat case gives a


    Original
    PDF S153P S153P D-74025 15-Jul-96 telefunken s153p 8464

    temic k 153 p

    Abstract: S153P
    Text: TELEFUNKEN Semiconductors S 153 P Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.


    Original
    PDF S153P D-74025 temic k 153 p

    S153P

    Abstract: No abstract text available
    Text: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.


    Original
    PDF S153P S153P D-74025 20-May-99

    S153P

    Abstract: telefunken s153p
    Text: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.


    Original
    PDF S153P S153P D-74025 20-May-99 telefunken s153p

    Untitled

    Abstract: No abstract text available
    Text: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.


    Original
    PDF S153P S153P D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: S153P Vishay Semiconductors Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.


    Original
    PDF S153P S153P 08-Apr-05

    BPW-20R

    Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
    Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200


    Original
    PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original
    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    BORON

    Abstract: BPW34 application BPW77NA BPW41N bpx43-6 BPW43 BPW17 BPW85 BPW34 BPW41N IR DATA
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original
    PDF que98 BORON BPW34 application BPW77NA BPW41N bpx43-6 BPW43 BPW17 BPW85 BPW34 BPW41N IR DATA

    near IR sensors with daylight filter

    Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
    Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original
    PDF w10MW) near IR sensors with daylight filter luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector

    TSOP1738

    Abstract: TDSR5150 TDSR5160 TDSR1160 TDSR3160 TDSR3150 TSOP1738 DATASHEET TLHG4400 tcst1300 BPW34 application
    Text: Vishay Semiconductors Standard Packing Units Alphanumeric Index 4N25 Std. Pack. Units 3000 Alphanumeric Index BPX43–4 Std. Pack. Units 1000 4N25 G V 3000 BPX43–5 1000 4N26 3000 BPX43–6 1000 4N27 3000 CNY17(G)–1 3000 4N28 3000 CNY17(G)–2 3000 4N32


    Original
    PDF BPX43 CNY17 CNY64 CNY64A CNY64B CNY65 TSOP1738 TDSR5150 TDSR5160 TDSR1160 TDSR3160 TDSR3150 TSOP1738 DATASHEET TLHG4400 tcst1300 BPW34 application

    near IR sensors with daylight filter

    Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
    Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic S153P S e m i t i n (t u ( t n r s Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a herm etically sealed short T O -5 package. Due to its flat, w aterciear glass w indow the device is sen­ sitive to visible and near infrared radiation.


    OCR Scan
    PDF S153P S153P Applica00 450nm 15-Jul-96

    BPW89

    Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
    Text: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area


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    PDF 820nm BPV11 850nm BPW89 S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953

    BPW 64 photo

    Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
    Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package


    OCR Scan
    PDF BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan
    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    sil6400

    Abstract: STS7500 s520 SSF4500 s7302
    Text: Temic S e m i c « n il u c t o r s Genera] Information Alphanumeric Index T>pe . Type . BP 1 0 4 . . 6 .2 0 7 B P W 8 5 . . . . 320 T E M T 2 2 0 0 . . . 4 ,3 9 8 TSIP7601 . . . . B P V 1 0 . . 5 ,2 0 3


    OCR Scan
    PDF BPV11 BPV11F T4700 ESS5400 TSHA5201 TSHA5501 TSHA6201 S4300 TSUS5201 TSUS5X12 sil6400 STS7500 s520 SSF4500 s7302

    TDS05160

    Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
    Text: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601


    OCR Scan
    PDF TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 TDS05160 TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    BPW34 smd

    Abstract: bpv10nf bpw43
    Text: Tem ic S e m i c o n d u c t o r s Photo PIN Diodes Characteristics Package Photo Sensitive Area/tam2 I* !* Ira /fiA +A- @ k /u m W ns ® X = 820 om (Ee * l mW / cm2> R*. /12 (VR = Î0 V) Photo PIN Diodes in Clear Plastic Package e? BPW34 7.5 65° 50(>40)


    OCR Scan
    PDF BPW34 BPW46 BPW43 BPV10 BPW82* BPW83* BPV10NF BPV22NF BPV23NF* S153P BPW34 smd bpw43

    TDS05160

    Abstract: TDSR5150 TDS05150 TDS03160 TDSR5160 TSOP1738 TDS03150 TDS01150 TDSR3150 TSOP1838
    Text: VISH A Y Vishay Telefunken Y Alphanumeric Index Type Page Type Page Type Page 4N25 30 CNY17 G -2 32 TCDT1103(G) 33 4N25(G)V 32 CNY17(G)3 32 TCDT1110(G) 4N26 30 CNY64 35 4N27 30 CNY64A 35 4N28 30 CNY64B 4N32 30 4N33 30 4N35 Type Page 32 TDSL1150 TDSL1160 18


    OCR Scan
    PDF BP104 BPV10 BPV10NF BPV11 BPV11F BPV20F BPV21F BPV22F BPV22NF BPV23F TDS05160 TDSR5150 TDS05150 TDS03160 TDSR5160 TSOP1738 TDS03150 TDS01150 TDSR3150 TSOP1838

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


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    PDF