near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

S1787

Abstract: S1787-04 S1787-08 S1787-12
Contextual Info: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide

S5557

Abstract: S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

S3407

Abstract: SS493 S3407-01
Contextual Info: Si Photodiodes Visible/Visible to ÍR Range, for General Photometry Type No. Dimensional Outline (P.50 to 53)/ Window Material *1 Effective Active Area Active Spectral Response Range Peak Sensitivity Wavelength X Xp Photo Sensitivity S (A/W) - - . - • - He-Ne

Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3

S1133-02

Abstract: S1133-05 lk 46 PD-60 S1133 S1133-03 S1133-12 S2357 D107-P PD61
Contextual Info: - 258 - I £ typ.15 typ.15 typ.40 typ.1.15 _ - ? ÍJ i EV tlx 100 100 100 100 100 100 100 100 100 100 100 100 100 100 m 100 100 100 ÏD max ínA¡ 0.01 0.01 0.02 U.Ol 0.02 0.01 0.02 0.02 0.02 0.01 0.01 0.02 0.01 0.02 typ.D.Dl typ.0.01 typ.0.03 0.1 Vr V)

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S1787

Abstract: S1787-04 S1787-08 S1787-12 S178704
Contextual Info: PHOTODIODE Siフォトダイオード S1787シリーズ 低暗電流プラスチックパッケージ受光素子 S1787シリーズは 暗電流を低く抑えたプラスチックパッケージのフォトダイオードです。 遮光性プラスチックパッケージのため、

S1787

Abstract: S1787-04 S1787-08 S1787-12
Contextual Info: PHOTODIODE Si photodiode S1787 series Plastic package photodiode with low dark current S1787 series is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide

S1133-02

Abstract: 1010R photometry S2164
Contextual Info: HAMAMATSU CORP 4 S 2 cì b C H 0Q054T1 Silicon Photodiodes Type No. Effective Sensitive Area mm Package (mm) (Ta — 25°C) Short Circuit Shunt Dark Junction Radiant Resistance Current Current Capaci­ Sensitivity Peak Ishat lOOlux Rsh Id tance Spectral

S1133-02

Abstract: S1133-11 S1133-03 S2216 02 S2164 S1190 hamamatsu S1087 Hamamatsu S1087 light S2357 Hamamatsu S1133
Contextual Info: HAMAMATSU Silicon CORP 1TE D • 42SU0*! 00 DE S 2t . 5 ■ 'p*|-S\ P h O tO d lO d e S Visible Light/Visible Light to IR Photometry Photosensitive surface Spectral Response Outlines Type No. Features S1087-01 For visible light to near IR S1087 For visible light