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    Advanced Thermal Solutions Inc ATS-21A-16-C2-R0

    HEATSINK 54X54X10MM XCUT T766
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    DigiKey ATS-21A-16-C2-R0 Tray 25 1
    • 1 $4.48
    • 10 $4.358
    • 100 $4.48
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    Advanced Thermal Solutions Inc ATS-21A-15-C2-R0

    HEATSINK 50X50X25MM XCUT T766
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    DigiKey ATS-21A-15-C2-R0 Tray 25 1
    • 1 $6.47
    • 10 $6.29
    • 100 $6.47
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    Advanced Thermal Solutions Inc ATS-21A-13-C2-R0

    HEATSINK 50X50X15MM XCUT T766
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    DigiKey ATS-21A-13-C2-R0 Tray 25 1
    • 1 $4.24
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    Advanced Thermal Solutions Inc ATS-21A-171-C2-R0

    HEATSINK 30X30X20MM R-TAB T766
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    DigiKey ATS-21A-171-C2-R0 Tray 25 1
    • 1 $3.93
    • 10 $3.822
    • 100 $3.6376
    • 1000 $3.6376
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    Advanced Thermal Solutions Inc ATS-21A-195-C2-R0

    HEATSINK 40X40X12MM XCUT T766
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    DigiKey ATS-21A-195-C2-R0 Tray 25 1
    • 1 $3.6
    • 10 $3.507
    • 100 $3.3376
    • 1000 $3.3376
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    Find more S21A1 price and stock on Findchips.com

    S21A1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s-parameter

    Abstract: S11S22-S12S21 fa12 mark RF S-parameters RF transistors with s-parameters s-parameter s11 s12 s21 FA12 FB12 agilent ads cst microwave studio
    Text: DesignCon 2006 Accurate Calibration and Measurement of Non-Insertable Fixtures in FPGA and ASIC Device Characterization Hong Shi, Altera Corporation [hshi@altera.com] Geping Liu, Altera Corporation Alan Liu, Altera Corporation CP-ACMFIX-1.0 Abstract S-parameter measurement on interfaces with non-insertable connections has been a


    Original     		PDF

    TRANSISTOR SMD MARKING CODE NM

    Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
    Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is


    Original     		PDF MC3403 2N2219 1N4148 MBC775 TRANSISTOR SMD MARKING CODE NM philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: S11A1 Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology

    common emitter amplifier

    Abstract: No abstract text available
    Text: Transistors Explanation of symbols Explanation of symbols FGeneral symbols The following symbols are used to indicate electrical characteristics and other parameters. V : Voltage f : Frequency I : Current C : Capacitance P : Power N : Noise T : Temperature


    Original     		PDF

    transistor s11 s12 s21 s22

    Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21

    sot333

    Abstract: sot390
    Text: Philips Semiconductors General QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by: Philips Semiconductors is a Quality Company, renowned


    Original     		PDF QS9000 sot333 sot390

    Audio Output Transistor Amplifier

    Abstract: s11a1
    Text: Transistors Explanation of symbols Explanation of symbols FGeneral symbols The following symbols are used to indicate electrical characteristics and other parameters. V : Voltage f : Frequency I : Current C : Capacitance P : Power N : Noise T : Temperature


    Original     		PDF

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology

    smd-transistor DATA BOOK

    Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A
    Text: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance


    Original     		PDF MC3403 2N2219 1N4148 MBC775 smd-transistor DATA BOOK smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A

    Untitled

    Abstract: No abstract text available
    Text: 7 GHz 高频继电器 MEDER electronic 干簧继电器能处理高达10GHz的频率 简介 历年来的工程师都认为转换高频率和非常短而快的数 字脉冲已有最佳方法，这种方法适用于为处理高频率 而特别设计半导体– 即砷化镓场效应管。但现在砷


    Original     		PDF 10GHz 50ohm Z11Z12Z21Z22 TCE10 8-10GHz

    AN1849

    Abstract: APP1849 LS12 LS22 MAX2320
    Text: Maxim > App Notes > Wireless and RF Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1849 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF MAX2320: com/an1849 AN1849, APP1849, Appnote1849, AN1849 APP1849 LS12 LS22 MAX2320

    nec tokin oe 128

    Abstract: NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF X18437JJ3V0IF00 X18437JJ2V0IF 10BASE2/5/-T 10Mbps 200m5 100BASE-T 100Mbps 100BASE-TX100BASE-T4100BASE-FX 1000BASE-X 1000BASE-LX1000BASE-SX1000BASE-CX nec tokin oe 128 NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC

    RF transistors with s-parameters

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave

    high power FET transistor s-parameters

    Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1

    AN1849

    Abstract: APP1849 LS12 LS22 MAX2320 MAX2720 MAX2721
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1849 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF com/an1849 MAX2320: MAX2720: MAX2721: AN1849, APP1849, Appnote1849, AN1849 APP1849 LS12 LS22 MAX2320 MAX2720 MAX2721

    Untitled

    Abstract: No abstract text available
    Text: Transistors Explanation of symbols Explanation of symbols •G e n e ra l symbols V ceo : Collector-emitter voltage The maximum volt­ The following symbols are used to indicate electrical age betw een the collector and em itter when characteristics and other parameters.


    OCR Scan     		PDF