Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S21PJ2 Search Results

    S21PJ2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC3099 500MHz) SC-59

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)


    OCR Scan     		PDF 2SC3098 500MHz) SC-59 S21el2

    2SC5321

    Abstract: No abstract text available
    Text: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) |S2l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5321 16GHz SC-70 006igns, 2SC5321

    2SC3607

    Abstract: J505
    Text: TO SH IBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2iel2= 9.5dB f = 1GHz 1.7 MAX. Q4±a05 -0 = MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3607 250mm2 4-a05 2SC3607 J505

    2SC5320

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain


    OCR Scan     		PDF 2SC5320 2SC5320

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, |S2lel2—14.5dB f = 500MHz . NF = 3.0dB, |S2lel2= 9-0dB(f=lGHz)


    OCR Scan     		PDF 2SC3098 S2lel2--14 500MHz) SC-59

    MH-96

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0 .5 2 .5 - 0 .3 Low Noise Figure, High Gain. NF = l.ldB, |S2iel2= HdB f=lGHz MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3606 SC-59 --10V, S21pJ2 500MHz --j50 MH-96

    2SC3607

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2iel2= 9.5dB f = 1GHz 1.6 MAX. 4.6 MAX. 1.7 MAX. Q4±a05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3607 250mm2 -j250 2SC3607

    2SC309

    Abstract: 2SC3098 uPI Semiconductor
    Text: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + a5 2.5 —0.3 • Low Noise Figure. . NF = 2.5dB, |S2lel2 —14.5dB f = 500MHz . NF = 3.0dB, |S2iel2 —9.0dB (f = 1GHz)


    OCR Scan     		PDF 2SC3098 500MHz) SC-59 2SC309 2SC3098 uPI Semiconductor

    2SC3011

    Abstract: No abstract text available
    Text: 2SC3011 TOSHIBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS. High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz 2 .5 + — 0 .5 0 .3 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3011 SC-59 2SC3011

    Untitled

    Abstract: No abstract text available
    Text: 2SC4840 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VH F-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB , |S2iel2= 13dB f=lGHz -EE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SC4840 --j50 --20mA

    2SC5098

    Abstract: 7420 PC
    Text: TOSHIBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= lOdB f=2G Hz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SC5098 -j250 2SC5098 7420 PC

    2SC5320

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain


    OCR Scan     		PDF 2SC5320 SC-59 2SC5320

    2SC3606

    Abstract: c3c3 transistor
    Text: TOSHIBA 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + 0 .5 2 . 5 - 0 .3 • Low Noise Figure, High Gain. . NF = l.ld B , |S 2lel 2—lld B f=lG H z M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3606 SC-59 -j250 /-jl50 2SC3606 c3c3 transistor