Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S3 NPN Search Results

    S3 NPN Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy

    S3 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c2316

    Abstract: Remocon 558 KS57C2308 lcd circuit diagram for samsung s3p7235 SAM47 S3C7238 pin DIAGRAM OF DIP TOP 244 PN
    Text: 22-S3-C7238/P7238/C7235/P7235-062000 USER'S MANUAL S3C7238/P7238/C7235/P7235 KS57C2308/P2308/C2316/P2316 4-Bit CMOS Microcontroller Revision 2 Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set Oscillator Circuits Interrupts


    Original     		PDF 22-S3-C7238/P7238/C7235/P7235-062000 S3C7238/P7238/C7235/P7235 KS57C2308/P2308/C2316/P2316) SAM47 S3P7238/P7235 c2316 Remocon 558 KS57C2308 lcd circuit diagram for samsung s3p7235 S3C7238 pin DIAGRAM OF DIP TOP 244 PN

    BFQ31R

    Abstract: "UHF Transistors" BFQ31AR BFQ31 BFQ31A DSA003677
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS BFQ31 BFQ31A ISSUE 3 – JANUARY 1996 PARTMARKING DETAILS BFQ31 – S2 BFQ31A – S4 BFQ31AR – S5 BFQ31R – S3 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage


    Original     		PDF BFQ31 BFQ31A BFQ31AR BFQ31R 100MHz 60MHz BFQ31R "UHF Transistors" BFQ31AR BFQ31 BFQ31A DSA003677

    s3-r-a2.5

    Abstract: bos s3-r-a2.5 S3-S-D12 s3s-a2 S3T-R-D12-PNP S3S-C10 S3S-B2 S3-S-C50 S3T-R-C50-PNP s3t-s-e1-pnp
    Text: Block Style Optical Sensors Technical Description When there is no space for traditional sensors, there is only one answer: miniaturization. The diffuse BOS S3 with its small dimensions 13 x 26 × 52 mm can be used in locations with shallow installation depth (right angle


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 21-S3-C7335/P7335-1199 USER'S MANUAL S3C7335/P7335 4-Bit CMOS Microcontroller Revision 1 S3C7335/P7335 4-BIT CMOS MICROCONTROLLER USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the


    Original     		PDF 21-S3-C7335/P7335-1199 S3C7335/P7335 SEG11/P9 40-Pin TB573316A AS40D-A SM6306 TB573316A

    S10 diode

    Abstract: IS813
    Text: IS813 S10/S7/S5/S3: Photon Coupled Interrupter, 4 Pin Transistor, Fast Switching Datasheet ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055


    Original     		PDF IS813 S10/S7/S5/S3: BSI9000 CECC20000 S10/S7/S5/S IS813S10 IS813S7 IS813S5 IS813S3 S10 diode

    SM1350

    Abstract: No abstract text available
    Text: SM1350 series • ■ ■ ■ ■ ■ ■ Basic Functions • 4.0 MHz oscillator frequency • Power-save function - Oscillator stopped when no output - S0 to S3, MODE, LH pull-up resistors open • BTL or A-class outputs • Chattering prevention circuit STN, STOP, S0


    Original     		PDF SM1350 10-bit 16-tone 1024-step NC9611BE CIRCUITS--21

    TRANSISTOR b1181

    Abstract: 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML
    Text: SANYO SEMICONDUCTOR 1EE D | CORP 7T17Q7t. GQOSIBD •T-S3-U 2SD1649 - NPN Triple Diffused Planar S ilicon Transistor 2039 Color TV Horizontal Deflection Output Applicationsfwith Damper Diode 1755B Applications . High-voltage, power switching Features . Fast speed tfmax=0.4us).


    OCR Scan     		PDF 2SD1649 QD513Q 1755B B1181 B1252 TRANSISTOR b1181 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML

    NPN DARLINGTON 10A 500V

    Abstract: diode 500v 10A
    Text: -Jolitroi i lp[s3@ yj Tr ©¡&TTÄ[L®< Devices. Inc. HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED DARLINGTON CHIP NUM BER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold


    OCR Scan     		PDF 305mm) 10MHz 10MHz 400pF 400pF SDM4066, SDM4067 NPN DARLINGTON 10A 500V diode 500v 10A

    TRANSISTOR BI 187

    Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
    Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage


    OCR Scan     		PDF BUV71 T0126 15A3DIN TRANSISTOR BI 187 sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126

    BUV71

    Abstract: A 2712 FC10A telefunken ta 750 a2712 PSA-25 BUV71 telefunken
    Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage


    OCR Scan     		PDF BUV71 BUV71 A 2712 FC10A telefunken ta 750 a2712 PSA-25 BUV71 telefunken

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor


    OCR Scan     		PDF 0D271bD H11AA1-H11AA4 H11AAI S-42662 92CS-429S1

    Untitled

    Abstract: No abstract text available
    Text: S3 S£ M 'C IC IM O , , n T a n 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		PDF 2N5210 2N5088

    RX1011B250Y

    Abstract: No abstract text available
    Text: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.


    OCR Scan     		PDF DD1S17S RX1011B250Y VCB-50 VCE-20 0Q1S17Ã T-33-15 RX1011B250Y

    2SD424

    Abstract: 2SB554
    Text: 2SD424 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. fS 25.0 MAX. FEATURES : OZÌJM&X. S3 • High Power Dissipation : Pc=150W • High Breakdown Voltage : V c e O=180V + 0.09 0i.o~o.o3 • Complementary to 2SB554. • Recommended for 100W High Fiderity Audio


    OCR Scan     		PDF 2SD424 2SB554. 2SD424 2SB554

    ESM5045D

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fc^E S> bb53^31 OOEflbOb 0 S3 H A P X ESM5045D V SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).


    OCR Scan     		PDF ESM5045D OT227B. Csat/50;

    photo transistor til 78

    Abstract: 74S00 74H00 H74A1 transistor cross ref 74H00 TTL TTL 74H00
    Text: f G E SOLID STATE 01 DE § 3S7S0fll 001^755 fl | Optoelectronic Specification*. T-V/-S3 Photon Coupled Isolator H74A1 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor TTL Interface T he G E Solid State H74A1 provides logic to logic optical interfacing of TT L gates with


    OCR Scan     		PDF H74A1 H74A1 74H00 74S00 500VDc) photo transistor til 78 transistor cross ref 74H00 TTL TTL 74H00

    HALF BRIDGE NPN DARLINGTON POWER MODULE

    Abstract: SGS35DB070 transistor j237 diode sg 5 ts
    Text: 30E_*_ • ï'iaisav 0030712 s ■ "ì • Vfr SGS-THOMSON s_6 - ôD gfôm i@ ¥fô *l S G S3 5 D B 070D s-THOMSON HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS ■ LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE


    OCR Scan     		PDF O-240) PC-029« HALF BRIDGE NPN DARLINGTON POWER MODULE SGS35DB070 transistor j237 diode sg 5 ts

    transistors BC 458

    Abstract: transistors BC 457 transistors BC 458 pnp BC 458 BDS940 smd transistors 458 bc 457 9351 npn 940 BDS934
    Text: PHILIPS INTERNATIONAL Philips Components Product specification date of issue April 1991 • 7U0S2b BDS934/936/938/940/942 r-S3-/7 Data sheet status SbE * PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PN P silicon epitaxial base transistors


    OCR Scan     		PDF BDS934/936/938/940/942 OT223) BDS933/935/ BDS934 BDS936 BDS938 BDS940 BDS942 transistors BC 458 transistors BC 457 transistors BC 458 pnp BC 458 smd transistors 458 bc 457 9351 npn 940

    CSB546

    Abstract: CSD401 G229
    Text: CSD401 CSD401 NPN PLASTIC POWER TRANSISTOR Complementary CSB546 TV Vertical Deflection Output Applications DIM A B C D E F G H J K L M N JcL- — MIN 14.42 9.63 3.56 - 1,15 3.75 2,29 2.54 MAX 16.51 10.67 4.S3 0 .90 1.40 3,88 2.79 3.43 0 ,5 6 12.70 14.73 6,35


    OCR Scan     		PDF CSD401 CSD401 CSB546 B3a33cm 0D01154 CSB546 G229

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 12E D Jfl3tbDll GDDBDSl T | T - S3-OS- 2N5013 THRU 2N5015 500 mA HIGH VOLTAGE NPN TRANSISTOR 8 0 0 -1 0 0 0 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396


    OCR Scan     		PDF 2N5013 2N5015 2N5010 2N5012

    IS-953

    Abstract: GEPS2001
    Text: E SOLI» STATE 01 Optoelectronic Specifications DE § 3 0 7 5 0 0 1 DOnflSfl 0 T ^ J -S3 K' Photon Coupled Isolator GEPS2001 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State GEPS2001 is a gallium arsenide, infrared emit­ ting diode coupled with a silicon phototransistor in a dual-in-line


    OCR Scan     		PDF GEPS2001 GEPS2001 33mW/Â E51868 3fl75DÃ flL-100Ã IS-953

    ic lm723

    Abstract: SCHEMATIC POWER SUPPLY WITH lm723 LM723CH 1N1426 LM723CM LM723C LM723 0 to 15 voltage regulator power supply LM723 POWER SUPPLY lm723
    Text: LM723/LM723C S3 National Æ m Semiconductor LM723/LM723C Voltage Regulator General Description Features The LM723/LM723C is a voltage regulator designed primar­ ily for series regulator applications. By itself, it will supply output currents up to 150 mA; but external transistors can


    OCR Scan     		PDF LM723/LM723C LM723/LM723C LM723C LM723 TL/H/8563-18 TL/H/8563-19 ic lm723 SCHEMATIC POWER SUPPLY WITH lm723 LM723CH 1N1426 LM723CM LM723 0 to 15 voltage regulator power supply LM723 POWER SUPPLY

    controller vending machine

    Abstract: No abstract text available
    Text: LUMEX O P T O / C O M P O N E N T S INC HIE D Sblbll3 0000004 1 • ILMX 7-V/-S3 ItCjiT-J P H O TO C O U PLER S KPC814,824,844 DIMENSIONS Unit: mm KPC814, 824, 844, photocoupler, is an optically coupled pair employing a GaAs IRED and a silicon NPN phototransistor.


    OCR Scan     		PDF KPC814 KPC814, KPC824 KPC844 5000volt I---------------80 controller vending machine

    BFR53

    Abstract: transistor 1061 transistor h 1061
    Text: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film


    OCR Scan     		PDF 00251Mb BFR53 bbS3T31 BFR53 transistor 1061 transistor h 1061