S3071 Search Results

KPINA0024EA

Abstract: S3071 S3072 S3399 S3883
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

Contextual Info: Si PIN photodiodes S3071 S3072 S3399 S3883 Large area, high-speed Si PIN photodiodes The S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large photosensitive area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for FSO free space

Contextual Info: Si PIN Photodiodes 3 Type No. Dim ensional Outline ( P .44-46)/ W indow Material Package @ /K TO-5 TO-8 S1223 S1223-01 S3071 /K S3072 @ /K S3883 ® /K S3399 TO-5 ® /K @ W in d o w m aterial, K: borosilicate glass 28 Active Area Effective Size Active Area

O30100

Contextual Info: Si PIN Photodiodes 4 Type No. S1223 Dimensional Effective Active Outline Active (P.46 to 48)/ Package Area Size Area Window Material ‘1 (m m 2) (mm) /K TO-5 S3071 ®/K TO-8 S3072 ®/K S1223-01 S3883 ®/K S3399 ®/K TO-5 *1 : Window material, K: borosilicate glass

KPINA0024EA

Abstract: S3071 S3072 S3399 S3883 V424
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

KPINA0024EA

Abstract: S3071 S3072 S3399 S3883
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

S3071

Abstract: S3072 S3399 S3883 VR24
Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

Contextual Info: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.

Contextual Info: Si PINフォトダイオード S3071 S3072 S3399 S3883 大面積高速Si PINフォトダイオード S3071・S3072・S3399・S3883はϕ1.5～ϕ5.0 mmの広い受光面をもち40～300 MHzの優れた周波数特性をもつSi PINフォト ダイオードです。空間光伝送をはじめ、高速パルス光の検出などに適しています。

Contextual Info: Si PIN photodiodes S3071 S3072 S3399 S3883 Large area, high-speed Si PIN photodiodes The S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large photosensitive area from ϕ1.5 to ϕ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for FSO free space

S3071

Abstract: S3072 S3399 S3883
Contextual Info: PHOTODIODE Si PINフォトダイオード S3071, S3072, S3399, S3883 大面積高速Si PINフォトダイオード S3071, S3072, S3399, S3883はφ1.5~φ5.0 mmの広い受光面をもち 40∼300 MHzの優れた周波数特性をもつSi PINフォトダイオード

S1223-01

Contextual Info: PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package @/K TO-5 S1223-01 Active Area Effective Size Active Area (mm) (mm2) 2.4X2.8 6.6 3.6X3.6 13 S3071 /K TO-8 (p 5.0 19.6 S3072 @/K TO-5 <f>3.0 7.0 S1863-01 ® /K

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.40-43)/ Window Material*' S1223 S1223 01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590 01 S3590 03 S3590 05 S3588 03 *1 W i n d o w m aterial, O /K K /K © /K ® /K ® /K ® /R ® /R Short Photo Sensitivity S (A/W) Typ.

Contextual Info: Photosensor amplifier C8366 series Current-to-voltage conversion amplifier C8366: for high-speed Si PIN photodiode C8366-01: for high-speed InGaAs PIN photodiode Features Applications Wide band DC to 100 MHz Typ. (-3 dB; varies depending on the photodiode used)

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

SGM20C1E332-2A

Abstract: KFN8319F315296Z LQ150X1DWF1 SGM20C1E332 FLCL-16S flc38xgc6v-06p FLCV-07 corrugated carton S0007 19MISCELLANEOUS
Contextual Info: 1 2 3 4 REVISION HISTORY A Revision Date Prepared 01A Jun.21,2004 M.Nishido 02A Apr.20,2005 M.Nishido Checked Approved Y.Furukoshi T. Ito A Summary F.Yamada 1st issue F. Yamada Change manufacture to SHARP. B B C C D DOCUMENT CONTROL SECTION D DATE E LQ150X1DWF1

S2973-01

Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active

TO8 socket

Abstract: C8366 S3071 S3399 S3883 S5821 S5971 S5972 S5973 Photodiode, TO-5,
Contextual Info: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection

E207943

Abstract: CHI MEI e207943 M150X3-T05 53475-0600 Chi Mei Optoelectronics MAR 618 transistor s0007 2SK1475 S0001 S0003
Contextual Info: Issued Date:Mar.01’2002 Model No.: M150X3-T05 Approval - CONTENTS REVISION HISTORY - 3 1. GENERAL DESCRIPTION - 4 -

FI-SEB20P-HFE

Abstract: FI-S20S FI-SE20M G768 SM02 T-51639D084JU-FW-A-AB THC63LVDF84B FI-SEB-20P-HFE
Contextual Info: First Edition Jan 17, 2005 LCD Module Technical Specification Final Revision * Type No. T-51639D084JU-FW-A-AB Approved by Quality Assurance Division Checked by (ACI Engineering Division) Prepared by (ACI Engineering Division) No. Item Page - CONTENTS

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

ipl lamp

Abstract: FI-S20S FI-SE20M FI-SEB20P-HFE G768 S3071 SM02 T-51639D084JU-FW-A-AB THC63LVDF84B
Contextual Info: First Edition Sep 12, 2005 LCD Module Technical Specification Final Revision * Type No. T-51639D084JU-FW-A-AB Approved by Quality Assurance Division Checked by (ACI Engineering Division) Prepared by (ACI Engineering Division) No. Item Page - CONTENTS