MOSFET driver 175C
Abstract: SUM110N04-04 S-41166
Text: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers
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SUM110N04-04
O-263
SUM110N04-04--E3
08-Apr-05
MOSFET driver 175C
SUM110N04-04
S-41166
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO-251 DPAK SHORT LEAD (T1 METHOD) T 4.0 G J See Note 1 See Note 4 E R D See Note 4 16.0 B A 12.0 See Note 1 A M Marking On Plastic Upward K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2.
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O-251
S-41165--Rev.
02-Aug-04
01-Sep-04
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Si5515DC
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = −4.5 V −4.1 D Load Switching for Portable Devices
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Si5515DC
18-Jul-08
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SUD50N02-09P
Abstract: No abstract text available
Text: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-09P
O-252
SUD50N02-09P--E3
18-Jul-08
SUD50N02-09P
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SUD50N024-09P
Abstract: No abstract text available
Text: SUD50N024-09P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
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SUD50N024-09P
O-252
SUD50N024-09P--E3
S-41168--Rev.
14-Jun-04
SUD50N024-09P
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Untitled
Abstract: No abstract text available
Text: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER MLT4SH-LP316 MLT6SH-LP316 MLT8SH-LP316 MLT10SH-LP316 MLT12SH-Q316 .88 22.4 B .75 .02 [19.1] MAX BUNDLE DIAMETER
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MLT4SH-LP316
MLT6SH-LP316
MLT8SH-LP316
MLT10SH-LP316
MLT12SH-Q316
S41164
MLT12SH-Q316
N41164BS/05
N41164BS
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SUD50N02-12P
Abstract: No abstract text available
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-12P
O-252
SUD50N02-12P--E3
S-41168--Rev.
14-Jun-04
SUD50N02-12P
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hollingsworth h270
Abstract: TL3080 MIL-T-7928/1 R3454B XR5109N R4271S TL3061 MS25036 XR1858SN tl3062
Text: How to use your catalog This catalog is organized for your convenience in specifying and ordering Hollingsworth Solderless Terminals. The table of Contents lists major sections and highlights the content of each. Each section is preceded by an explanation of the
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W17SF
XSO70918SN
XSO70919SN
SO70931S
SO70932S
SO73159S
SO73161S
SO73163SF
XSO73165SN
SO73170S
hollingsworth h270
TL3080
MIL-T-7928/1
R3454B
XR5109N
R4271S
TL3061
MS25036
XR1858SN
tl3062
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12p mosfet
Abstract: SUD50N02-12P
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-12P
O-252
SUD50N02-12P--E3
18-Jul-08
12p mosfet
SUD50N02-12P
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TO252-DPAK
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO-252 DPAK (T1 METHOD) T 4.0 G J See Note 1 See Note 4 E R D See Note 4 16.0 B A 12.0 See Note 1 A M Marking On Plastic Upward K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2.
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O-252
S-41165--Rev.
02-Aug-0
02-Aug-04
01-Sep-04
TO252-DPAK
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SUD50N02-11P
Abstract: No abstract text available
Text: SUD50N02-11P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D D D D ID (A)a 0.011 @ VGS = 10 V 18 0.020 @ VGS = 4.5 V 13.5 APPLICATIONS D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-11P
O-252
SUD50N02-11P--E3
18-Jul-08
SUD50N02-11P
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41168
Abstract: VISHAY 34D SUD50N02409P
Text: SUD50N024-09P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
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SUD50N024-09P
O-252
SUD50N024-09P
SUD50N024-09P--E3
08-Apr-05
41168
VISHAY 34D
SUD50N02409P
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41168
Abstract: SUD50N02-09P
Text: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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PDF
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SUD50N02-09P
O-252
SUD50N02-09P--E3
S-41168--Rev.
14-Jun-04
41168
SUD50N02-09P
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Untitled
Abstract: No abstract text available
Text: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. MAX.BUNDLE PACKAGE "L" LENGTH DIA QTY +/-.3 [7] MLT4DEH15-Q316 4" [102] 25 29.5" [749] MLT6DEH15-Q316 6" [152] 25 41.5" [1054] MLT8DEH15-Q316
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MLT4DEH15-Q316
MLT6DEH15-Q316
MLT8DEH15-Q316
S41162
N41162BS
DC/03A
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S-41166
Abstract: SUM110N04-04 SUM110N04-04-E3
Text: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers
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Original
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PDF
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SUM110N04-04
O-263
SUM110N04-04--E3
S-41166--Rev.
14-Jun-04
S-41166
SUM110N04-04
SUM110N04-04-E3
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Untitled
Abstract: No abstract text available
Text: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency
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PDF
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SUD50N02-09P
O-252
SUD50N02-09Pâ
18-Jul-08
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Si5515DC
Abstract: vishay MOSFET code marking
Text: Si5515DC Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = −4.5 V −4.1 D Load Switching for Portable Devices
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Original
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Si5515DC
S-41167--Rev.
14-Jun-04
vishay MOSFET code marking
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SUD50N02-09P
Abstract: No abstract text available
Text: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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Original
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PDF
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SUD50N02-09P
O-252
SUD50N02-09P--E3
08-Apr-05
SUD50N02-09P
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SUD50N02-11P
Abstract: No abstract text available
Text: SUD50N02-11P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D D D D ID (A)a 0.011 @ VGS = 10 V 18 0.020 @ VGS = 4.5 V 13.5 APPLICATIONS D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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PDF
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SUD50N02-11P
O-252
SUD50N02-11P--E3
08-Apr-05
SUD50N02-11P
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO-252 DPAK REVERSE LEAD (T1 METHOD) T 4.0 G J See Note 1 See Note 4 E R D See Note 4 16.0 B A 12.0 See Note 1 A M Marking On Heatsink Upward K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2.
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Original
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O-252
S-41165--Re
S-41165--Rev.
02-Aug-04
01-Sep-04
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df52
Abstract: No abstract text available
Text: SIEMENS SFD13N05L SPU13N05L SIPMOS Power T ransistor • N channel • Enhancement mode • Logic Level • Avalanche-rated •d i//d f rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type Vds b ^DS on Package O rdering Code SPD13N05L 55 V
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SFD13N05L
SPU13N05L
SPD13N05L
P-T0252
P-T0251
Q67040
S4124
S4116
df52
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ic vertical la 78141
Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices
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CH-8953
ic vertical la 78141
IC LA 78141 schematic
LA 78141 tv application circuit
4116 ram
tda 78141
TMS4500
LA 78141 VERTICAL
21L14
mitsubishi elevator circuit diagram
4464 64k dram
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S-41166
Abstract: No abstract text available
Text: T H IS COPY IS PROVIDED ON A RESTRICTED BAS IS AND IS NOT TO BE USED O - .88 IN ANY WAY DETRIM ENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART MAX.BUNDLE PACKAGE LENGTH NO. DIA. Q T Y . "L " + / -.3" [ 7 ] MLT4D5H-Q316 4" [ 102 ] 25 29.5" [ 749 ]
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MLT4D5H-Q316
MLT6D5H-Q316
SS00026
SS00011
S41166
S-41166
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S4120
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT 61298S IDT 61298L FEATURES: DESCRIPTION: • Fast Output Enable (5E ) pin available lor added system flexibility The IDT61298 is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT's high-performance, high-reliabllity tech nolog y-C E M O S . This state-of-the-art technology,
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25/35/45/55/70ns
20/25/35/45/55ns
IDT61298S
400mW
400yw
IDT61298L
350mW
100jjw
28-pin
MIL-STD-883,
S4120
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