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Rochester Electronics LLC TPS62315YZR IC REG BUCK 1.875V 500MA 8CSP
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DigiKey	TPS62315YZR	Bulk			233	1 - 10 - 100 - 1000 $1.29 10000 $1.29	Buy Now
Texas Instruments TPS62315YZR IC REG BUCK 1.875V 500MA 8CSP
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DigiKey	TPS62315YZR	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.27014	Buy Now
Rochester Electronics	TPS62315YZR		75,000		1	1 $1.24 10 $1.24 100 $1.17 1000 $1.05 10000 $1.05	Buy Now
Texas Instruments TPS62315YZT IC REG BUCK 1.875V 500MA 8CSP
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DigiKey	TPS62315YZT	Reel			250	1 - 10 - 100 - 1000 $1.64944 10000 $1.45837	Buy Now
Rochester Electronics	TPS62315YZT		12,500		1	1 $1.43 10 $1.43 100 $1.34 1000 $1.22 10000 $1.22	Buy Now
Rochester Electronics LLC TPS62315YZT IC REG BUCK 1.875V 500MA 8CSP
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DigiKey	TPS62315YZT	Bulk			202	1 - 10 - 100 - 1000 $1.49 10000 $1.49	Buy Now
Rochester Electronics LLC TPS62311YZDR IC REG BUCK 1.5V 500MA 8DSBGA
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DigiKey	TPS62311YZDR	Bulk			329	1 - 10 - 100 - 1000 $0.91 10000 $0.91	Buy Now

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S6231 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
74347 Abstract: 74347 datasheet si4674 Text: SPICE Device Model Si4674DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4674DY 18-Jul-08 74347 74347 datasheet si4674	PDF
SUM40N10-30 Abstract: No abstract text available Text: SPICE Device Model SUM40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM40N10-30 18-Jul-08 SUM40N10-30	PDF
SUM110N04-02L Abstract: No abstract text available Text: SPICE Device Model SUM110N04-02L Vishay Siliconix N-Channel 40-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM110N04-02L S-62314Rev. 27-Nov-06 SUM110N04-02L	PDF
S62428 Abstract: S-62426 S62122 S-6243 S62306 S62205 S6210 S6230 SP-R0022A S62432 Text: S PA C E A P P L I C AT I O N P R O D U C T S High Performance Power Inductors Mil-STD-981 Class B is available for all dash numbers Class S wire size limitations apply to parts marked with this symbol Vanguard Part Number Inductance D.C. uH Resistance ±10%	Original	Mil-STD-981 S62101 S62102 S62103 S62104 S62105 S62201 S62202 S62203 S62204 S62428 S-62426 S62122 S-6243 S62306 S62205 S6210 S6230 SP-R0022A S62432	PDF
SUM110N04-04 Abstract: No abstract text available Text: SPICE Device Model SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM110N04-04 capaci33 S-62312Rev. 27-Nov-06 SUM110N04-04	PDF
SUM110N04-04 Abstract: No abstract text available Text: SPICE Device Model SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM110N04-04 18-Jul-08 SUM110N04-04	PDF
SUM40N10-30 Abstract: No abstract text available Text: SPICE Device Model SUM40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM40N10-30 S-62313Rev. 27-Nov-06 SUM40N10-30	PDF
si5511 Abstract: S6231 74346 Text: SPICE Device Model Si5511DC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si5511DC S-62311Rev. 27-Nov-06 si5511 S6231 74346	PDF
SUM110N04-02L Abstract: No abstract text available Text: SPICE Device Model SUM110N04-02L Vishay Siliconix N-Channel 40-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM110N04-02L 18-Jul-08 SUM110N04-02L	PDF
MDM 6600 Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1	Original	9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918	PDF
SUM110N04-03L Abstract: 4800 N-channel mosfet 73339 Text: SPICE Device Model SUM110N04-03L Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM110N04-03L 18-Jul-08 SUM110N04-03L 4800 N-channel mosfet 73339	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SUM110N04-2m7H Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM110N04-2m7H 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si5511DC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si5511DC 18-Jul-08	PDF