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    JRH Electronics 660-008G10S8-05-81

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    DigiKey 660-008G10S8-05-81 Bulk 1
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    Vox Power Ltd NEVO-600S-8058-DK000

    AC/DC CNV 2X24V 2X12V 2X24V 300W
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    DigiKey NEVO-600S-8058-DK000 Box 15
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    Glenair Inc 660-008G10S8-05-81

    Connector Accessories Plug Protective Cover with Sash Chain Shell Size 10 - Bulk (Alt: 660-008G10S8-05-81)
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    Avnet Americas 660-008G10S8-05-81 Bulk 3 Weeks 1
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    Mouser Electronics 660-008G10S8-05-81
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    Newark 660-008G10S8-05-81 Bulk 1
    • 1 $209.96
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    Interstate Connecting Components 660-008G10S8-05-81
    • 1 $221.4405
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    Murrelektronik GmbH 7000-PS805-8681000

    Murrelektronik M6FX7002-5LM00-1BA0
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    Mouser Electronics 7000-PS805-8681000
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    Banner Engineering Corp S22AMTS-805800

    S22 Pro Touch Series: 2-Color Rgb Touch Sensor; Voltage: 10-30 V Dc; Housing: Polycarbonate; Ip67 Ip69K; Laser Marked Start On Top; Input/Output: Bimodal, No, Momentary; Colors: Green Red;; Euro 5-Pin Integral Connector; S2 |Banner Engineering S22AMTS-805800
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    Newark S22AMTS-805800 Bulk 1
    • 1 $77
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    RS S22AMTS-805800 Bulk 12 Weeks 1
    • 1 $80.85
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    S8058 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s8058

    Abstract: No abstract text available
    Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance


    Original     		PDF Si7120DN Si7120DN-T1-E3 Si7120DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8058

    SI7100DN

    Abstract: No abstract text available
    Text: Si7100DN Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ.) 40 nC • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7100DN Si7100DN-T1-E3 Si7100DN-T1-GE3 11-Mar-11

    Si7114DN

    Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
    Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7114DN Si7114DN-T1-E3 Si7114DN-T1-GE3 25lectual 18-Jul-08

    Si7100DN

    Abstract: Si7100
    Text: Si7100DN Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ.) 40 nC • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7100DN Si7100DN-T1-E3 Si7100DN-T1-GE3 18-Jul-08 Si7100

    Si7110DN

    Abstract: Si7110DN-T1-E3 Si7110DN-T1-GE3
    Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7110DN Si7110DN-T1-E3 Si7110DN-T1-GE3 18-Jul-08

    si4658

    Abstract: Si4658DY
    Text: SPICE Device Model Si4658DY Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4658DY 18-Jul-08 si4658

    Untitled

    Abstract: No abstract text available
    Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance


    Original     		PDF Si7120DN Si7120DN-T1-E3 Si7120DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7110DN Si7110DN-T1-E3 Si7110DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 11-Mar-11

    Si7116DN

    Abstract: Si7116DN-T1-E3 Si7116DN-T1-GE3
    Text: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.0078 at VGS = 10 V 16.4 0.010 at VGS = 4.5 V 14.5 Qg (Typ.) 15 nC PowerPAK 1212-8 COMPLIANT • Synchronous Rectification • Intermediate Switch


    Original     		PDF Si7116DN Si7116DN-T1-E3 Si7116DN-T1-GE3 08-Apr-05

    Si7114DN

    Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
    Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7114DN Si7114DN-T1-E3 Si7114DN-T1-GE3 08-Apr-05

    Si7114DN

    Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
    Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7114DN Si7114DN-T1-E3 Si7114DN-T1-GE3 11-Mar-11

    Si7108DN

    Abstract: Si7108DN-T1-E3 Si7108DN-T1-GE3
    Text: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0049 at VGS = 10 V 22 0.0061 at VGS = 4.5 V 19.7 Qg (Typ.) 20 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET for


    Original     		PDF Si7108DN Si7108DN-T1-E3 Si7108DN-T1 11-Mar-11 Si7108DN-T1-GE3

    Si7110DN

    Abstract: Si7110DN-T1-GE3 Si7110DN-T1-E3 s8058
    Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7110DN Si7110DN-T1-E3 Si7110DN-T1-GE3 08-Apr-05 s8058

    SI7116DN-T1-E3

    Abstract: No abstract text available
    Text: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.0078 at VGS = 10 V 16.4 0.010 at VGS = 4.5 V 14.5 Qg (Typ.) 15 nC PowerPAK 1212-8 COMPLIANT • Synchronous Rectification • Intermediate Switch


    Original     		PDF Si7116DN Si7116DN-T1-E3 Si7116DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI7110DN-T1-E3

    Abstract: No abstract text available
    Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7110DN Si7110DN-T1-E3 Si7110DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0049 at VGS = 10 V 22 0.0061 at VGS = 4.5 V 19.7 Qg (Typ.) 20 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET for


    Original     		PDF Si7108DN Si7108DN-T1-E3 Si7108DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7892ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 25 • Halogen-free • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7892ADP Si7892ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET


    Original     		PDF Si7114DN Si7114DN-T1-E3 Si7114DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7104DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0037 at VGS = 4.5 V 35 0.007 at VGS = 2.5 V 35 VDS (V) 12 Qg (Typ.) 23 nC • Halogen-free Option Available • TrenchFET Power MOSFETs • Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7104DN Si7104DN-T1-E3 Si7104DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S-80580-Rev

    Abstract: No abstract text available
    Text: Si7892ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 25 • Halogen-free • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7892ADP Si7892ADP-T1-GE3 11-Mar-11 S-80580-Rev

    Si7407DN

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 18-Jul-08

    S-80580-Rev

    Abstract: Si7892ADP
    Text: Si7892ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 25 • Halogen-free • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7892ADP Si7892ADP-T1-GE3 18-Jul-08 S-80580-Rev