Si2303CDS
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
08-Apr-05
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Si7884BDP-T1-E3
Abstract: Si7884BDP
Text: Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 21 nC APPLICATIONS COMPLIANT
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Si7884BDP
Si7884BDP-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)
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Si3473CDV
Si3473CDV-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N08-7m6P
O-263
SUM90N08-7m6P-E3
18-Jul-08
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Si7192DP
Abstract: Si7192DP-T1-GE3
Text: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm
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Si7192DP
Si7192DP-T1-GE3
08-Apr-05
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LCD display jhd
Abstract: jhd 16a S-1380 JHD LCD S-81250SGY s-7116A TRANSISTOR PNP BA RT SOT 89 S-87050 M6M80041 notebook Universal LCD inverter AVT
Text: CMOS IC Product Catalog Components Headquarters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents
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S-801
S-809
S-808
S-807
Boursidiere-BP72
1-0009-180/SH
LCD display jhd
jhd 16a
S-1380
JHD LCD
S-81250SGY
s-7116A
TRANSISTOR PNP BA RT SOT 89
S-87050
M6M80041
notebook Universal LCD inverter AVT
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P
SUD50N03-09P-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N08-7m6P
O-263
SUM90N08-7m6P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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S7116A
Abstract: S13P40A IC HS 8110 equivalent transistor s8850 4609 MOSFET INVERTER chip 8-pin 4502 S-2927A bu 808 af S8850 by 808 dfx
Text: CMOS IC Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents
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S-808
S-807
S-806
S-809
1-9807-020-MS/AC
S7116A
S13P40A
IC HS 8110
equivalent transistor s8850
4609 MOSFET INVERTER
chip 8-pin 4502
S-2927A
bu 808 af
S8850
by 808 dfx
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Si7192DP
Abstract: Si7192DP-T1-GE3
Text: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm
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Si7192DP
Si7192DP-T1-GE3
11-Mar-11
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J-STD-020A
Abstract: Si8413DB
Text: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • New MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Si8413DB
Si8413DB-T1-E1
08-Apr-05
J-STD-020A
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SUD50N03-09P
Abstract: SUD50N03-09P-E3
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P-E3
11-Mar-11
SUD50N03-09P
SUD50N03-09P-E3
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Vishay DaTE CODE 1206-8
Abstract: AN811 marking code vishay 1206-8 S8079
Text: New Product Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.023 at VGS = 2.5 V 6 0.027 at VGS = 1.8 V 6 VDS (V) 12 Qg (Typ.) 11.5 nC • Halogen-free • TrenchFET Power MOSFET
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Si5406CDC
Si5406CDC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE 1206-8
AN811
marking code vishay 1206-8
S8079
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Untitled
Abstract: No abstract text available
Text: SUM36N20-54P Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 RDS(on) (Ω) ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested
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SUM36N20-54P
O-263
SUM36N20-54P-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm
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Si7192DP
Si7192DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N08-7m6P
O-263
SUM90N08-7m6P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si7192DP
Abstract: No abstract text available
Text: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm
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Si7192DP
Si7192DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.023 at VGS = 2.5 V 6 0.027 at VGS = 1.8 V 6 VDS (V) 12 Qg (Typ.) 11.5 nC • Halogen-free • TrenchFET Power MOSFET
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Si5406CDC
Si5406CDC-T1-GE3
25emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si7192DP-T1-GE3
Abstract: Si7192DP si7192
Text: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm
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Si7192DP
Si7192DP-T1-GE3
18-Jul-08
si7192
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Untitled
Abstract: No abstract text available
Text: New Product Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.023 at VGS = 2.5 V 6 0.027 at VGS = 1.8 V 6 VDS (V) 12 Qg (Typ.) 11.5 nC • Halogen-free • TrenchFET Power MOSFET
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Si5406CDC
Si5406CDC-T1-GE3
08-Apr-05
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S8079
Abstract: No abstract text available
Text: New Product Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.023 at VGS = 2.5 V 6 0.027 at VGS = 1.8 V 6 VDS (V) 12 Qg (Typ.) 11.5 nC • Halogen-free • TrenchFET Power MOSFET
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Si5406CDC
Si5406CDC-T1-GE3
11-Mar-11
S8079
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TCS3084-01
Abstract: No abstract text available
Text: DIN =i V * r "J K HOSIDEN DIN CONNECTORS In-Line Sockets) U N IT : m m TCS8000 X / Series ^EB Ini $ -f TV Soldering Connection Type TCS8056-01 -5201 D IN S ta n d a rd N o. 41524 4I524 N um ber o f C o n ta c ts ttmm 7 7 “> a /B ush & 45327 5a 5b 45322
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TCS8000
TCS8056-01
4I524
TCS8C-34-0I
TCS8044-01-5201
TCS8O54-0I-52C1
TCSSG24-01
TC58064-01
S0O84-Oâ
TCS8094-01-5201
TCS3084-01
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