S8214 Search Results

S8214 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPS82140SILR		Texas Instruments	17V Input 2A Synchronous Step-Down Converter MicroSiP™ Module With Integrated Inductor 8-uSiP -40 to 125
TPS82140SILT		Texas Instruments	17V Input 2A Synchronous Step-Down Converter MicroSiP™ Module With Integrated Inductor 8-uSiP -40 to 125

S8214 Price and Stock

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Texas Instruments TPS82140SILR DC DC CONVERTER 0.9-6V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TPS82140SILR	Cut Tape	1,022		1	1 $3.92 10 $2.959 100 $2.4563 1000 $2.19269 10000 $2.19269	Buy Now
	TPS82140SILR	Digi-Reel	1,022		1	1 $3.92 10 $2.959 100 $2.4563 1000 $2.19269 10000 $2.19269	Buy Now
	TPS82140SILR	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $2.11575	Buy Now
Mouser Electronics	TPS82140SILR		7,172			1 $4.25 10 $3.82 100 $3.13 1000 $2.24 10000 $2.13	Buy Now
Newark	TPS82140SILR	Cut Tape			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NexGen Digital	TPS82140SILR		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	TPS82140SILR		9,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Win Source Electronics	TPS82140SILR		9,000			1 - 10 - 100 $2.131 1000 $1.827 10000 $1.827	Buy Now
Texas Instruments TPS82140SILT DC DC CONVERTER 0.9-6V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TPS82140SILT	Cut Tape	111		1	1 $4.87 10 $3.709 100 $3.098 1000 $3.098 10000 $3.098	Buy Now
	TPS82140SILT	Digi-Reel	111		1	1 $4.87 10 $3.709 100 $3.098 1000 $3.098 10000 $3.098	Buy Now
	TPS82140SILT	Reel			250	1 - 10 - 100 - 1000 $2.94552 10000 $2.69818	Buy Now
Mouser Electronics	TPS82140SILT		7,666			1 $5.42 10 $4.87 100 $3.99 1000 $2.86 10000 $2.72	Buy Now
Newark	TPS82140SILT	Cut Tape			1	1 $6.17 10 $5.9 100 $5.13 1000 $4.77 10000 $4.77	Buy Now
Bristol Electronics	TPS82140SILT		5		2	1 - 10 $4.48 100 $4.48 1000 $4.48 10000 $4.48	Buy Now
Rochester Electronics	TPS82140SILT		11		1	1 $2.76 10 $2.76 100 $2.59 1000 $2.35 10000 $2.35	Buy Now

NexGen Digital	TPS82140SILT		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	TPS82140SILT	Cut Tape	76			1 $4.98 10 $3.68 100 $3.35 1000 $3.35 10000 $3.35	Buy Now
Win Source Electronics	TPS82140SILT		8,933			1 - 10 - 100 $2.261 1000 $2.087 10000 $2.087	Buy Now
Texas Instruments TPS82140EVM-720 EVAL BOARD FOR TPS82140
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TPS82140EVM-720	Bulk	5		1	1 $58.8 10 $58.8 100 $58.8 1000 $58.8 10000 $58.8	Buy Now
Mouser Electronics	TPS82140EVM-720		1			1 $65.17 10 $65.16 100 $65.16 1000 $65.16 10000 $65.16	Buy Now
Essentra Components SRS8-2-14-01 BRD SPT SNAP LOCK SCREW MNT 7/8"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SRS8-2-14-01	Bulk			1,000	1 - 10 - 100 - 1000 $0.26693 10000 $0.26693	Buy Now
Mouser Electronics	SRS8-2-14-01					1 $0.56 10 $0.403 100 $0.323 1000 $0.27 10000 $0.253	Get Quote
RS	SRS8-2-14-01	Bulk		19 Weeks	1,000	1 - 10 - 100 - 1000 $0.261 10000 $0.24	Get Quote
DB Roberts	SRS8-2-14-01					1 - 10 - 100 - 1000 - 10000 -	Get Quote
TE Connectivity 202C642-71-0-CS8214 HEATSHRINK BOOT SZ42 BLACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	202C642-71-0-CS8214	Bulk			125	1 - 10 - 100 - 1000 $22.55216 10000 $22.55216	Buy Now
Mouser Electronics	202C642-71-0-CS8214					1 - 10 - 100 - 1000 $22.53 10000 $22.53	Get Quote
Interstate Connecting Components	202C642-71-0-CS8214					1 - 10 - 100 - 1000 $23.5441 10000 $23.5441	Buy Now
Master Electronics	202C642-71-0-CS8214					1 - 10 - 100 $20.23 1000 $19.82 10000 $19.82	Buy Now
Sager	202C642-71-0-CS8214					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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S8214 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
S8214 Abstract: TPCS8214 Text: S8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ S8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 10S (typ.)	Original	PDF	TPCS8214 S8214 TPCS8214
SiR470DP Abstract: S-82146 S82146 Text: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiR470DP 18-Jul-08 S-82146 S82146
DFN-10 Abstract: HP4192A DG2616 Text: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high	Original	PDF	DG2616, DG2617, DG2618 DG2618 DFN-10 HP4192A DG2616
Untitled Abstract: No abstract text available Text: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high	Original	PDF	DG2616, DG2617, DG2618 DG2618
a1717 Abstract: 2-0A91 SIE848DF Text: SPICE Device Model SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiE848DF S-82145 15-Sep-08 a1717 2-0A91
SiR402DP Abstract: No abstract text available Text: SPICE Device Model SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiR402DP S-82143 15-Sep-08
handbook of shipboard electromagnetic shielding practices Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915 Text: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command	Original	PDF	S9407-AB-HBK-010 S9407-AB-HBK-010, S9407-AB-HBK-010 03Z44, 05H31, 08K/CHABAY) PMS303A41, handbook of shipboard electromagnetic shielding practices ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Untitled Abstract: No abstract text available Text: SPICE Device Model Si5432DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	Si5432DC 18-Jul-08
SiR402DP Abstract: sir402 Text: SPICE Device Model SiR402DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiR402DP 18-Jul-08 sir402
SiS426DN Abstract: No abstract text available Text: SPICE Device Model SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS426DN 18-Jul-08
SiS426DN Abstract: SIS426 Text: SPICE Device Model SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS426DN S-82144 15-Sep-08 SIS426
DFN-10 Abstract: HP4192A DG2616 Text: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high	Original	PDF	DG2616, DG2617, DG2618 DG2618 DFN-10 HP4192A DG2616
SiS406DN Abstract: siliconix application notes Text: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS406DN S-82142 15-Sep-08 siliconix application notes
SiR470DP Abstract: S-82146 S82146 Text: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiR470DP capacit27 S-82146 15-Sep-08 S82146

SiS406DN Abstract: No abstract text available Text: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS406DN 18-Jul-08
S8214 Abstract: TPCS8214 Text: S8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ S8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 10S (typ.)	Original	PDF	TPCS8214 S8214 TPCS8214
Untitled Abstract: No abstract text available Text: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high	Original	PDF	DG2616, DG2617, DG2618 DG2618
Untitled Abstract: No abstract text available Text: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high	Original	PDF	DG2616, DG2617, DG2618 DG2618
mosfet 0018 Abstract: No abstract text available Text: SPICE Device Model SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiR476DP S-82140 15-Sep-08 mosfet 0018
s8214 Abstract: TPCS8214 Text: S8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ S8214 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 10S (typ.)	Original	PDF	TPCS8214 s8214 TPCS8214
S8214 Abstract: TPCS8214 Text: S8214 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSⅣ S8214 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 10.5 mΩ (標準)	Original	PDF	TPCS8214 S8214 TPCS8214
a1717 Abstract: No abstract text available Text: SPICE Device Model SiE848DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiE848DF 18-Jul-08 a1717
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiR476DP 18-Jul-08
Si5432DC Abstract: 83A17 Text: SPICE Device Model Si5432DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	Si5432DC S-82141 15-Sep-08 83A17

S8214 Search Results

S8214 Result Highlights (2)

S8214 Price and Stock

Texas Instruments TPS82140SILR

Texas Instruments TPS82140SILT

Texas Instruments TPS82140EVM-720

Essentra Components SRS8-2-14-01

TE Connectivity 202C642-71-0-CS8214

S8214 Datasheets Context Search

S8214

SiR470DP

DFN-10

Untitled

a1717

SiR402DP

handbook of shipboard electromagnetic shielding practices

Untitled

SiR402DP

SiS426DN

SiS426DN

DFN-10

SiS406DN

SiR470DP

SiS406DN

S8214

Untitled

Untitled

mosfet 0018

s8214

S8214

a1717

Untitled

Si5432DC