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    S9G08A Search Results

    S9G08A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S9G08A Toshiba MICROWAVE POWER GaAs FET Scan PDF

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    S9G08A

    Abstract: No abstract text available
    Text: TOSHIBA S9G08A MICROWAVE POWER GaAs FET PRELIMINARY Features • Low distortion - Padj = -74 dBc at Po = 38 dBm • High gain - G1dB = 13 dB • Partially matched type • Hermetically sealed package RF Performance Specifications Ta = 25°C Characteristic


    Original     		PDF S9G08A 2-16G6A) S9G08A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S9G08A PRELIMINARY Features • Low distortion - Padj = -7 4 dBc at Po = 38 dBm • High gain - G1dB = 13 dB • Partially matched type • Hermetically sealed package RF Performance Specifications Ta = 25°C Characteristic


    OCR Scan     		PDF S9G08A S9G08A

    S9G08A

    Abstract: 2-16G6A
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S9G08A TECHNICAL DATA FEATURES LOW DISTORTION PARTIALLY MATCHED TYPE HIGH GAIN G idB = 13 dB HERMETICALLY SEALED PACKAGE Padj = -74 dBc@ Po = 38 dBm RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS


    OCR Scan     		PDF S9G08A 38dBm, 600kHz S9G08A 2-16G6A