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    SA017 Search Results

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    SA017 Price and Stock

    Bel Fuse 0ZSA0175FF1E

    PTC RESET FUSE 15V 1.75A STRAP
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    DigiKey 0ZSA0175FF1E Bulk 3,115 1
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    Avnet Americas 0ZSA0175FF1E Bulk 12 Weeks 3,000
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    Sager 0ZSA0175FF1E 3,000
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    STMicroelectronics STEVAL-ISA017V1

    POWER SUPPLY FOR STB US-110V
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    Vishay Intertechnologies RDSA017525R00KFB00

    RDSA0175 25 10% F B - Bulk (Alt: RDSA017525R00KFB00)
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    Avnet Americas RDSA017525R00KFB00 Bulk 6 Weeks 1
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    Vishay Intertechnologies RDSA017550R00KFB00

    RDSA0175 50 10% F B - Bulk (Alt: RDSA017550R00KFB00)
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    Avnet Americas RDSA017550R00KFB00 Bulk 6 Weeks 1
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    • 100 $25.2872
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    Belden Inc 0ZSA0175FF1E

    Resettable Fuses - PPTC PTC Resettable Fuse 15V, 1.75A, Strap
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    Mouser Electronics 0ZSA0175FF1E
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    Find more SA017 price and stock on Findchips.com

    SA017 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SA017-07G Advanced Interconnections 17 POS MOLDED SIP ADAPTER Original PDF
    SA017-08T Advanced Interconnections 17 POS MOLDED SIP ADAPTER Original PDF
    SA017-09G Advanced Interconnections 17 POS MOLDED SIP ADAPTER Original PDF
    SA017-43G Advanced Interconnections 17 POS MOLDED SIP ADAPTER Original PDF
    SA017-68G Advanced Interconnections 17 POS MOLDED SIP ADAPTER Original PDF

    SA017 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN


    Original     		PDF V850E/ME2 32-Bit PD703111A U16031EJ3V0UD00 U16031EJ3V0UD

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    car adapter 12v

    Abstract: 12v dc to 6v dc 12V DC INPUT to 7.5V output SA020 6v to 12v power supply DC DC INPUT 24V OUTPUT 9V
    Text: MITSUMI Car Adaptors VAY Series 3 Switching Power Supplies 2 OUTLINE MITSUMI's car adaptors embracing all the power supply control for any compact equipment from such mobile communication equipment as mobile phone to audio equipment including mini-disks. A


    Original     		PDF SA001 SA005 SA007 SA009 SA017 SA020 2V/24V V/500mA V/800mA car adapter 12v 12v dc to 6v dc 12V DC INPUT to 7.5V output SA020 6v to 12v power supply DC DC INPUT 24V OUTPUT 9V

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WED3C7410E16MC-XBHX 7410E RISC Microprocessor HiTCE Multichip Package OVERVIEW FEATURES The WEDC 7410E/SSRAM multichip package is targeted for high performance, space sensitive, low power systems and supports the following power management features: doze, nap, sleep and


    Original     		PDF WED3C7410E16MC-XBHX 7410E 7410E/SSRAM WED3C7410E16M-XBX, WED3C7558M-XBX WED3C750A8M-200BX WED3C7410E16MC-XBHX 63Pb/37SN) 63Sn/37Pb)

    WED3C7410E16MC-XBHX

    Abstract: 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX 90Pb WED3C7410E16MC
    Text: White Electronic Designs WED3C7410E16MC-XBHX 7410E RISC Microprocessor HiTCE Multichip Package The WED3C7410E16MC-XBHX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited


    Original     		PDF WED3C7410E16MC-XBHX 7410E WED3C7410E16MC-XBHX 7410E/SSRAM 16Mbits 200MHz 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX 90Pb WED3C7410E16MC

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Pin FBGA Fast cycle times: 3.3ns, 4ns, 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation


    Original     		PDF MT57V256H36P

    7410E

    Abstract: WED3C7410E16M-XBHX WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX 90Pb10Sn block diagram of automatic flush system
    Text: White Electronic Designs WED3C7410E16M-XBHX PRELIMINARY* 7410E RISC Microprocessor HiTCE Multichip Package The WED3C7410E16M-XBHX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited


    Original     		PDF WED3C7410E16M-XBHX 7410E WED3C7410E16M-XBHX 7410E/SSRAM 400MHz 450MHz 16Mbits 200MHz WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX 90Pb10Sn block diagram of automatic flush system

    7410 frequency divider

    Abstract: 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX
    Text: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,


    Original     		PDF WED3C7410E16M-XBX WED3C7410E16M-XBX 7410E/SSRAM 7410E 400MHz 450MHz 16Mbits 7410E 7410 frequency divider WED3C750A8M-200BX WED3C7558M-XBX

    Untitled

    Abstract: No abstract text available
    Text: WED3C7410E16M-400BX HI-RELIABILITY PRODUCT RISC Microprocessor Multichip Package OVERVIEW *ADVANCED The WED3C7410E16M-400BX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles,


    Original     		PDF WED3C7410E16M-400BX 7410E/SSRAM WED3C7410E16M-400BX 7410E 256Kx72 21mmx25mm, 400MHz 200MHz 83MHz

    eaton el 198

    Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
    Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com


    Original     		PDF 877-ETN-CARE CA08100004E V3-T2-65 V3-T2-42â V3-T2-52 V3-T2-39â V3-T2-41 V3-T9-254 V3-T7-17 CA08100004Eâ eaton el 198 ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000

    SA047

    Abstract: No abstract text available
    Text: S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst


    Original     		PDF S29WS-N S29WS256N, S29WS128N, S29WS064N 16-Bit) S29WS256/128/064N SA047

    S71WS512ND0BFWEP

    Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 S71WS512ND0BFWEP LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND

    PD70F35

    Abstract: R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R
    Text: User Manual V850E2/MN4 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF V850E2/MN4 V850E2/Mx4 PD70F3510 PD70F3512 PD70F3514 PD70F3515 R01UH0011EJ0100, R01UH0011EJ0100 PD70F35 R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED3C7410E16M-400BX RISC Microprocessor Multichip Package *PRELIMINARY OVERVIEW The WED3C7410E16M-400BX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight


    Original     		PDF WED3C7410E16M-400BX 7410E/SSRAM WED3C7410E16M-400BX 7410E 256Kx72 21mmx25mm, 400MHz 200MHz 100MHz

    TRANSISTOR BFW 11

    Abstract: S29WS-N transisTOR C124 064N S29WS064N S29WS128N S29WS256N WS064 SA047-SA050
    Text: ADVANCE INFORMATION S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S29WS-N S29WS256N, S29WS128N, S29WS064N 16-Bit) TRANSISTOR BFW 11 transisTOR C124 064N S29WS064N S29WS128N S29WS256N WS064 SA047-SA050

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Pin FBGA Fast cycle times: 3.3ns, 4ns, 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation


    Original     		PDF MT57V256H36P

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware PD703111A Document No. U16031EJ5V0UD00 5th edition Date Published May 2006 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ5V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN


    Original     		PDF V850E/ME2 32-Bit PD703111A U16031EJ5V0UD00 U16031EJ5V0UD

    C50456

    Abstract: No abstract text available
    Text: WEDPZ512K72V-XBX HI-RELIABILITY PRODUCT 512Kx72 Synchronous Pipeline Burst ZBL SRAM ADVANCED* FEATURES DESCRIPTION • Fast clock speeds: 166, 133, 100MHz The WEDPZ512K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The


    Original     		PDF WEDPZ512K72V-XBX 512Kx72 100MHz WEDPZ512K72V-XBX C50456 C50456

    SA047

    Abstract: No abstract text available
    Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29WS064R 16-bit) S29WS064R SA047

    dq35j

    Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
    Text: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX dq35j CS11 CS21 CS22

    BC219

    Abstract: BC217 DA218 dSMC BC221 V850E2 BC316 BT71 BC217 transistor PD703500GM-JEU-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d2886-9318 BC219 BC217 DA218 dSMC BC221 V850E2 BC316 BT71 BC217 transistor PD703500GM-JEU-A

    BAX55

    Abstract: No abstract text available
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) S71WS-N-00 S71WS-N-00 BAX55