a65 dow the ne
Abstract: a88 t17 her ne transistor b143 e.s RJ80530
Text: PENTIUM III XEON PROCESSOR AT 600 MHz to 1 GHz with 256KB L2 Cache Datasheet Product Features § § § § Binary compatible with applications running on previous members of the Intel microprocessor family Optimized for 32-bit applications running on advanced 32-bit operating
|
Original
|
PDF
|
256KB
32-bit
SC330
72630QM
72635QM
72670QM
72675QM
52430M
52435M
a65 dow the ne
a88 t17 her ne
transistor b143 e.s
RJ80530
|
Z32 Zener
Abstract: HV-2405E 50mA fuse 15Vrms-275Vrms E1308 20L DIODE ZENER 2405e 2N2222 HV3-2405E-5 HV3-2405E-9
Text: HV-2405E September 1998 World-WideSingle Chip Power Supply File Number 2487.6 Features T he H V-2405E is a single chip off line pow er su p p ly that Direct AC to DC C onversion con verts w o rld w ide AC line volta ge s to a regulated DC W ide Input Voltage R a n g e . 1 5 V rm s-27 5V rm s
|
OCR Scan
|
PDF
|
HV-2405E
HV-2405E
24Vdc
15Vrms
275Vrms
200Hz
operation40
Z32 Zener
50mA fuse
15Vrms-275Vrms
E1308
20L DIODE ZENER
2405e
2N2222
HV3-2405E-5
HV3-2405E-9
|
Untitled
Abstract: No abstract text available
Text: AMD£I FINAL Am29F100T/Am29F1OOB 1 Megabit 131,072 x8-bit/65,536 x16-bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ ■ — Automatically programs and verifies data at
|
OCR Scan
|
PDF
|
Am29F100T/Am29F1OOB
x8-bit/65
x16-bit)
48-pin
Am29F100T/Am29F100B
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
|
OCR Scan
|
PDF
|
Am29F400AT/Am29F400AB
8-Bit/262
16-Bit)
44-pin
48-pin
0E5752Ã
Am29F400T/Am29F400B
18612B.
|
29F200
Abstract: HY29F200T
Text: mV *• Y II M n A I ■ l i ■■ ■■ » 1 ■ HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • 5.0 V 1 10% Read, Program, and Erase • - Minimizes system-level power requirements • - RY//BY output pin for detection of
|
OCR Scan
|
PDF
|
HY29F200T/B
HY29F200
16-Bit)
G-70I
T-70I
R-70I
G-70E,
T-70E,
R-70E
G-90I
29F200
HY29F200T
|
Untitled
Abstract: No abstract text available
Text: PENTIUM II XEON PROCESSOR AT 400 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Optimized for 32-bit applications running on advanced 32-bit operating systems ■ ■ ■ Single Edge Contact S.E.C. cartridge
|
OCR Scan
|
PDF
|
32-bit
|
TRANSISTOR ST25A
Abstract: ST25A transistor intel 4362 al microprocessor superset system design Pentium II Xeon BUT13 wintel ST25A
Text: PENTIUM II XEON PROCESSOR AT 400 AND 450 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Optimized for 32-bit applications running on advanced 32-bit operating systems ■ Dynamic Execution micro architecture
|
OCR Scan
|
PDF
|
32-bit
TRANSISTOR ST25A
ST25A transistor
intel 4362 al microprocessor superset system design
Pentium II Xeon
BUT13
wintel
ST25A
|
29F200AB
Abstract: 29f200at 29F200A da1048 29F200
Text: PRELIMINARY AMDB Am 29 F 200 AT/Am 29F 200 AB 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5.0 V ± 1 0 % for read and wri te o p e r a t i o n s
|
OCR Scan
|
PDF
|
16-Bit)
inadvertenF200AT/Am
29F200AB
44-Pi
16-038-S044-2
29F200AT/Am
29F200AB
29f200at
29F200A
da1048
29F200
|
a114 os hen nec
Abstract: apic S15 b154 sam la 8155 intel microcontroller architecture transistor b143 e.s A15-3P a45 dc he nne Pentium II Xeon DIODE 8137 DB83
Text: PENTIUM II XEON PROCESSOR AT 400 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Single Edge Contact S.E.C. cartridge packaging technology; the S.E.C. cartridge delivers high performance
|
OCR Scan
|
PDF
|
32-bit
a114 os hen nec
apic S15
b154 sam la
8155 intel microcontroller architecture
transistor b143 e.s
A15-3P
a45 dc he nne
Pentium II Xeon
DIODE 8137
DB83
|
AM29F040A
Abstract: 17113D-4 AMD date code 29f040 Am29F040
Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards
|
OCR Scan
|
PDF
|
Am29F040
32-pin
0257S2fl
0033bH3
AM29F040A
17113D-4
AMD date code 29f040
|
zener diode 68v
Abstract: No abstract text available
Text: HV-2405E Semiconductor September 1998 PBÄ World-WideSingle Chip Power Supply The H V-2405E is a single chip off line power supply that converts world wide A C line voltages to a regulated DC voltage. The output voltage is adjustable from 5V qq to 24V qq with an output current of up to 50m A. The HV-2405E
|
OCR Scan
|
PDF
|
HV-2405E
HV-2405E
15Vrm
275Vrm
-2405E
zener diode 68v
|
cvbs video frame grabber
Abstract: digital cvbs pattern LM385-1.2 SCL SDA VSYNC HSYNC PXCK image TMC2072 TMC2081 TMC22071 TMC22071A "frame grabber"
Text: F A I R O H 11—P S E M IC O N D U C T O R www.fairchildsemi.com tm TMC2072 Genlo ckin g Video Digitizer Description The TM C2072 Genlocking Video Digitizer samples and quantizes standard analog baseband composite NTSC or PAL video into its 8-bit digital equivalent. It extracts
|
OCR Scan
|
PDF
|
TMC2072
TMC2072-1
DS30002072
cvbs video frame grabber
digital cvbs pattern
LM385-1.2
SCL SDA VSYNC HSYNC PXCK image
TMC2072
TMC2081
TMC22071
TMC22071A
"frame grabber"
|
AM29F010
Abstract: amd 29F010 flash memory 29f010 29F010 DIP AM29F01055 Am29F010-120JC M29F010 Am29F010 Rev A
Text: FIN A L Am29F010 Advanced 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
|
OCR Scan
|
PDF
|
Am29F010
32-pin
29F010
29F010
amd 29F010 flash memory
29F010 DIP
AM29F01055
Am29F010-120JC
M29F010
Am29F010 Rev A
|
29F800T
Abstract: 29F800 code 29F800 amd 29f800 Am29F800T
Text: A D V A N C E IN F O R M A T IO N Am29F800T/Am29F800B AdVMi^ 8 Megabit 1,048,576 x 8-Blt/524,288 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
|
OCR Scan
|
PDF
|
Am29F800T/Am29F800B
8-Blt/524
16-Blt)
44-pin
48-pin
29F800T/Am29F800B
29F800T
29F800 code
29F800
amd 29f800
Am29F800T
|
|
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands
|
OCR Scan
|
PDF
|
HY29F040
32-Pin
HY29F040
120ns
P-121,
T-121,
R-121
P-12E,
|
Untitled
Abstract: No abstract text available
Text: AMD£I Am29F010 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Sector protection — Minimizes system level power requirements ■ — Hardware method that disables any combination
|
OCR Scan
|
PDF
|
Am29F010
|
JD 1803
Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
Text: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: HB52C88EM, HB52C89EM, HB52C168EN, HB52C169EN 64 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus HB52C88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52C89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus
|
OCR Scan
|
PDF
|
HB52C88EM,
HB52C89EM,
HB52C168EN,
HB52C169EN
HB52C88EM)
64-bit,
HB52C89EM)
72-bit,
HB52C168EN)
16-Mword
|
Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands
|
OCR Scan
|
PDF
|
HY29F040
32-Pin
P-121,
T-121,
R-121
P-12E,
|
6b90
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 1 6 M 2 M X 8 BIT M M L .V Ö 16 B - 9 0 - 1 2 FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs • Compatible with JED EC-standard world-wide pinouts
|
OCR Scan
|
PDF
|
40-pin
F9802
6b90
|
GP129
Abstract: tl 8709 p 10KMA CP2211 jl audio 500 1 schematics s3 via Twister IC FP014 FP020 s3 twister K rosan
Text: MODEL: 7170 Revision OA Contexts Title Page Cover Sheet 1 System Block Diagram 2 Power Block Diagram 3 Central Processor Unit 4 CPU Decoupling Capacitor & VTT Termination Resistor 5 North Bridge VIA TW ISTER Partial 1 6 North Bridge (VIA TWISTER ).PartiaI II
|
OCR Scan
|
PDF
|
VT8231
PCMCIA/1394
PCI441
SMT1-03
S20Q-0100-101
M/1-27/SPX2
FD501
mGA02^
FD504
GP129
tl 8709 p
10KMA
CP2211
jl audio 500 1 schematics
s3 via Twister IC
FP014
FP020
s3 twister K
rosan
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements
|
OCR Scan
|
PDF
|
Am29F200AT/Am29F200AB
44-pin
48-pin
|
7769
Abstract: ta 7769 320C10
Text: 06 7769 LC?M Aialog I/OPort ÆD ANALOG DEVICES FEA TU R ES T w o -C h a n n e l, 8-Bit 2.5 jis A D C T w o 8-Bit, 2.5 (jis D A C s w ith O utp u t A m p lifie rs Sp a n and O ffset of A D C and D A C F U N C T IO N A L B L O C K D IA G R A M AGND IADC AGNO (DAC)
|
OCR Scan
|
PDF
|
28-Lead
P-28A)
C1315
7769
ta 7769
320C10
|
Untitled
Abstract: No abstract text available
Text: HB52E88EM-D, HB52E89EM-D, HB52E168EN-D, HB52E169EN-D 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52E89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
|
OCR Scan
|
PDF
|
HB52E88EM-D,
HB52E89EM-D,
HB52E168EN-D,
HB52E169EN-D
HB52E88EM)
64-bit,
HB52E89EM)
72-bit,
HB52E168EN)
16-Mword
|
