Sakae Potentiometers
Abstract: SFCP18A-2172F potentiometer 2K LNB22 20K potentiometer 5k pot 10K potentiometer 2K POTENTIOMETER 5k pot application 5k potentiometer
Text: LOW-TORQUE POTENTIOMETER Precision 1-turn, Low-torque, Wirewound Element SAKAE Low-torque Potentiometers with a wirewound resistive element are very small in size and light in weight, It offers a very low starting torque of below 0.1mN • m (1gf • cm) in Model LNB22. Electrical detection of
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LNB22.
Sakae Potentiometers
SFCP18A-2172F
potentiometer 2K
LNB22
20K potentiometer
5k pot
10K potentiometer
2K POTENTIOMETER
5k pot application
5k potentiometer
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sumitomo CWDM
Abstract: L-band laser
Text: Wide Temperature -40 °C~95 °C Operation of Uncooled 1610 nm DFB Laser for CWDM Application Atsushi Matsumura, Takeshi Kishi, Michio Murata and Takashi Kato Sumitomo Electric Industries, Ltd.,1, Taya-cho, Sakae-ku, Yokohama, 244-8588, Japan, Email: matsumura-atsushi@sei.co.jp
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LBC7
Abstract: BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st 7to30V LBC7 RONA free transistor e2p
Text: Ultra-low On-Resistance LDMOS Implementation in 0.13 m CD and BiCD Process Technologies for Analog Power IC's Koji Shirai, Koji Yonemura, Kiminori Watanabe, Koji Kimura System LSI Division, Toshiba Semiconductor Company, 2-5-1 Kasama, Sakae, Yokohama, Kanagawa/Japan,
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7to30V
LBC7
BiCD 0.13
BCD8
0.18um LDMOS
BCD8* riccardi
cd013
BCD8 st
LBC7 RONA
free transistor e2p
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mvd 01
Abstract: bu 1011 92D-02 encoder quarter point H.261 r 02023 16-E two-dimensional inverse discrete cosine transform
Text: INTERNATIONAL TELECOMMUNICATION UNION ITU-T TELECOMMUNICATION STANDARDIZATION SECTOR OF ITU H.261 03/93 {This document has included corrections to typographical errors listed in Annex 5 to COM 15R 16-E dated June 1994. - Sakae OKUBO} LINE TRANSMISSION OF NON-TELEPHONE
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InP Laser Buried Heterostructure
Abstract: Laser InP buried heterostructure InP Laser BH laser InP BH Laser InP MF50 10 gb laser diode
Text: Highly Reliable AlGaInAs Buried Heterostructure Lasers for Uncooled 10Gb/s Direct Modulation N. Ikoma, T. Kawahara, N. Kaida, M. Murata, A. Moto, and T. Nakabayashi Transmission Devices R&D Laboratories, Sumitomo Electric Industries ltd.,1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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10Gb/s
000hours)
10-Gb/s
InP Laser Buried Heterostructure
Laser InP buried heterostructure
InP Laser BH
laser InP BH
Laser InP
MF50
10 gb laser diode
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SCP6G
Abstract: No abstract text available
Text: Specification: TS-S08D192A February, 2009 Technical specification for Small Form Factor Pluggable SFP OC-3 (155.52Mbps) Sumitomo Part Number Function SCP6G11-GL-# W E LR-1, 1310nm, 40km SCP6G61-GL-# W E LR-2, 1550nm, 80km Sumitomo Electric reserves the right to make changes in this specification without prior notice.
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TS-S08D192A
52Mbps)
SCP6G11-GL-#
1310nm,
SCP6G61-GL-#
1550nm,
1310nm
1550nm
SCP6G
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High Power GaAs FET
Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
Text: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for
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FLC317MG-4
FLC317MG-4
17Network
High Power GaAs FET
Fujitsu GaAs FET application note
C-111A
EIAJ ED-4701 111A
RM1101
fujitsu gaas fet
ED-4701
High voltage GaAs FET
FLC31
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DFB wavelength locker
Abstract: eudyna laser diode FLD5F20CE-E9535 FLD5F20CE-E9425 etalon wavelength locker 55nm E9425 e9530 Hauser+hrc+001 FLD5F20CE-E9195
Text: 1,550nm MI DFB Laser with Integrated Wavelength Locker FLD5F20CE-E FEATURES • • • • • 10Gb/s Modulator Integrated DFB Laser Diode Module Wavelength: ITU-T grid W9180 1563.05nm thru W9600 (1529.55nm) 1600 ps/nm Dispersion Compact package with GPO connector
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550nm
FLD5F20CE-E
10Gb/s
W9180
W9600
10Gb/s.
the4888
DFB wavelength locker
eudyna laser diode
FLD5F20CE-E9535
FLD5F20CE-E9425
etalon wavelength locker
55nm
E9425
e9530
Hauser+hrc+001
FLD5F20CE-E9195
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EUDYNA
Abstract: STM-16
Text: FID3Z2KX/LX PIN Photodiode FEATURES KX • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm diameter • Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,
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310nm
900nm
600nm
OC-12)
STM-16
OC-48)
310nm
550nm
EUDYNA
STM-16
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Untitled
Abstract: No abstract text available
Text: FLM4450-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: ηadd=41%(Typ.) ・Broad Band: 4.4~5.0GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM4450-45F
FLM4450-45F
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Untitled
Abstract: No abstract text available
Text: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-6F
FLM1314-6F
-65hods
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Untitled
Abstract: No abstract text available
Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω
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FLM4450-25F
-46dBc
FLM4450-25F
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eudyna GaAs FET RF Transistor
Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
eudyna GaAs FET RF Transistor
high frequency transistor ga as fet
transistor on 4959
eudyna fet
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FLL21E004ME
Abstract: No abstract text available
Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION
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FLL21E004ME
36dBm
17GHz
2200MHz
FLL21E004ME
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Untitled
Abstract: No abstract text available
Text: FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM7185-12F
-45dBc
FLM7185-12F
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
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C-Band Power GaAs FET
Abstract: FLC257MH-8
Text: FLC257MH-8 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-8 is a power GaAs FET that is designed for general
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FLC257MH-8
FLC257MH-8
C-Band Power GaAs FET
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Untitled
Abstract: No abstract text available
Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM1414-8F
-46dBc
FLM1414-8F
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Untitled
Abstract: No abstract text available
Text: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM7179-18F
-46dBc
FLM7179-18F
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eudyna GaAs FET RF Transistor
Abstract: No abstract text available
Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor
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FHX13X,
FHX14X
12GHz
FHX13)
12GHz
FHX14X
2-18GHz
eudyna GaAs FET RF Transistor
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Untitled
Abstract: No abstract text available
Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage
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FMM5057VF
FMM5057VF
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Bond
Abstract: power amplifier mmic
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four
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FMM5829X
39dBm
FMM5829X
Bond
power amplifier mmic
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FMM5027VJ
Abstract: FMM5027
Text: FMM5027VJ MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 3GHz • Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz • High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz • Wide Operating Temperature Range • Hermetically Sealed Package DESCRIPTION
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FMM5027VJ
26dBm
FMM5027VJ
FMM5027
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L-Band
Abstract: FLL410IK-3C
Text: FLL410IK-3C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is
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FLL410IK-3C
FLL410IK-3C
L-Band
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