PL172
Abstract: 8Mx32 20C200 831000 4Mx16 flash 4C00 4mx32 Samsung 6400 C400 C800
Text: SEC-MFAEG-MobileSDRAM-AN Application Note ARM PrimeCellTM MPMC PL172 Register Setting for Mobile SDRAM Version 1.0, Sep 30-2005, Samsung Electronics Copyright ⓒ 2004 Samsung Electronics Co.,LTD. Contact Information Mobile/ Flash Application Engineering Group
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PL172)
re062000
32bits
2Mx32
128Mb
4Mx32
8Mx32
256Mb
512Mb
16Mx16
PL172
8Mx32
20C200
831000
4Mx16 flash
4C00
4mx32
Samsung 6400
C400
C800
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tda 9592
Abstract: TDA 2310 verilog code for Modified Booth algorithm tda 7830 TDA 8344 sl 7221 KGL80 AO33 FD2S
Text: D • A • T • A • B • O • O • K KGL80 0.5µm 3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KGL80 0.5µm 3.3V Gate Array Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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KGL80
KGL80pads.
tda 9592
TDA 2310
verilog code for Modified Booth algorithm
tda 7830
TDA 8344
sl 7221
KGL80
AO33
FD2S
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K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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3,6v sl-386
Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
Text: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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KG80/KGM80
3,6v sl-386
transistor SL-100
tda 9592
FD6S
ao21
KG80
KGM80
equivalent transistor S 2000N
CL 473
kt 501
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samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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KFG1G16Q2A
Abstract: 63FBGA onenand 4GB MLC NAND
Text: OneNAND1G KFG1G16Q2A-DEBx OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) FLASH MEMORY KFG1G16Q2A KFH2G16Q2A KFW4G16Q2A 1Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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KFG1G16Q2A-DEBx)
KFH2G16Q2A-DEBx)
KFW4G16Q2A-DEBx)
KFG1G16Q2A
KFH2G16Q2A
KFW4G16Q2A
80x11
KFH2G16Q2A)
KFG1G16Q2A
63FBGA
onenand
4GB MLC NAND
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KFN4G16Q2M
Abstract: NAND SAMSUNG
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) MuxOneNAND8G(KFK8G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M KFK8G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFK8G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
KFK8G16Q2M
KFM2G16Q2M)
80x11
KFN4G16Q2M)
NAND SAMSUNG
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qualcomm onenand
Abstract: No abstract text available
Text: OneNAND1G KFG1G16Q2A-DEBx OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) FLASH MEMORY KFG1G16Q2A KFH2G16Q2A KFW4G16Q2A 1Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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KFG1G16Q2A-DEBx)
KFH2G16Q2A-DEBx)
KFW4G16Q2A-DEBx)
KFG1G16Q2A
KFH2G16Q2A
KFW4G16Q2A
KFG1G16Q2A-DEB8000.
qualcomm onenand
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0587H
Abstract: KFW8G16Q2M 63FBGA 0071H oneNand flash samsung 8Gb nand flash 0719h
Text: OneNAND2G KFG2G16Q2M-DEBx OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) FLASH MEMORY KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 2Gb OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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KFG2G16Q2M-DEBx)
KFH4G16Q2M-DEBx)
KFW8G16Q2M-DEBx)
KFG2G16Q2M
KFH4G16Q2M
KFW8G16Q2M
80x11
KFH4G16Q2M)
0587H
KFW8G16Q2M
63FBGA
0071H
oneNand flash
samsung 8Gb nand flash
0719h
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KFW8G16Q2M
Abstract: KFG2G16Q2M-DEB 63FBGA 072D samsung 8GB Nand flash 128KB kfg2g16q2m
Text: OneNAND2G KFG2G16Q2M-DEBx OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) FLASH MEMORY KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 2Gb OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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KFG2G16Q2M-DEBx)
KFH4G16Q2M-DEBx)
KFW8G16Q2M-DEBx)
KFG2G16Q2M
KFH4G16Q2M
KFW8G16Q2M
80x11
KFH4G16Q2M)
KFW8G16Q2M
KFG2G16Q2M-DEB
63FBGA
072D
samsung 8GB Nand flash
128KB
kfg2g16q2m
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KFn4G
Abstract: Samsung 8Gb MLC 076B 0632H KFK8G16Q2M 0736h 06B6H 0747H KFN4G16Q2MDEb KFN4G16Q2M
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) MuxOneNAND8G(KFK8G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M KFK8G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFK8G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
KFK8G16Q2M
support80
80x11
KFN4G16Q2M)
KFn4G
Samsung 8Gb MLC
076B
0632H
KFK8G16Q2M
0736h
06B6H
0747H
KFN4G16Q2MDEb
KFN4G16Q2M
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M378T5663FB3
Abstract: No abstract text available
Text: Rev. 1.0, Jul. 2010 M378T2863FBS M378T5663FB3 M391T2863FB3 M391T5663FB3 240pin Unbuffered DIMM based on 1Gb F-die 60 & 84 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M378T2863FBS
M378T5663FB3
M391T2863FB3
M391T5663FB3
240pin
K4T1G084QF
M378T5663FB3/M391T5663FB3
128Mbx8
128Mx72
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Untitled
Abstract: No abstract text available
Text: OneNAND2G KFG2G16Q2M-DEBx OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) Preliminary FLASH MEMORY KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 2Gb OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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KFG2G16Q2M-DEBx)
KFH4G16Q2M-DEBx)
KFW8G16Q2M-DEBx)
KFG2G16Q2M
KFH4G16Q2M
KFW8G16Q2M
KFH4G16Q2M)
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SAMSUNG 256Mb NAND Flash Qualification Report
Abstract: No abstract text available
Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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OneNAND512Mb
KFG1216U2B-xIB6)
KFG1216U2B
512Mb
80x11
KFG1216U2B)
63ball
SAMSUNG 256Mb NAND Flash Qualification Report
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Untitled
Abstract: No abstract text available
Text: OneNAND512Mb KFG1216Q2B-xEBx FLASH MEMORY KFG1216Q2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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OneNAND512Mb
KFG1216Q2B-xEBx)
KFG1216Q2B
512Mb
80x11
KFG1216x2B)
63ball
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NAND Flash controller ecc
Abstract: KFM1G16Q2C NANDFlashcontrollerecc Samsung oneNand Mux mas 1024b spare parts for mobile 63FBGA
Text: MuxOneNAND1Gb KFM1G16Q2C-xEBx FLASH MEMORY KFM1G16Q2C 1Gb MuxOneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2C-xEBx)
KFM1G16Q2C
80x11
KFM1G16Q2C)
NAND Flash controller ecc
KFM1G16Q2C
NANDFlashcontrollerecc
Samsung oneNand Mux
mas 1024b
spare parts for mobile
63FBGA
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KFM1G16Q2B
Abstract: ADQ - 32W 0234H 63FBGA KFM1G16Q2
Text: MuxOneNAND1Gb KFM1G16Q2B-DEBx FLASH MEMORY KFM1G16Q2B 1Gb MuxOneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2B-DEBx)
KFM1G16Q2B
80x11
KFM1G16Q2B)
KFM1G16Q2B
ADQ - 32W
0234H
63FBGA
KFM1G16Q2
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63FBGA
Abstract: KFG1216U2B 67-ball samsung "NOR Flash" 512MB
Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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OneNAND512Mb
KFG1216U2B-xIB6)
KFG1216U2B
512Mb
80x11
KFG1216U2B)
63ball
63FBGA
KFG1216U2B
67-ball
samsung "NOR Flash" 512MB
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KFM1G16Q2C
Abstract: 8023-h b*137 63FBGA
Text: MuxOneNAND1Gb KFM1G16Q2C-xEBx FLASH MEMORY KFM1G16Q2C 1Gb MuxOneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2C-xEBx)
KFM1G16Q2C
80x11
KFM1G16Q2C)
KFM1G16Q2C
8023-h
b*137
63FBGA
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KFG1216U2B
Abstract: OneNAND 63FBGA Flash Memory SAMSUNG OneNAND
Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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OneNAND512Mb
KFG1216U2B-xIB6)
KFG1216U2B
512Mb
80x11
KFG1216U2B)
63ball
KFG1216U2B
OneNAND
63FBGA
Flash Memory SAMSUNG OneNAND
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KFG1216Q2B
Abstract: 63FBGA TBA 2800 onenand
Text: OneNAND512Mb KFG1216Q2B-xEBx FLASH MEMORY KFG1216Q2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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OneNAND512Mb
KFG1216Q2B-xEBx)
KFG1216Q2B
512Mb
80x11
KFG1216x2B)
63ball
KFG1216Q2B
63FBGA
TBA 2800
onenand
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M393T2863FBA-C
Abstract: serial presence detect samsung 2010 K4T1G084QF 800cl5 M393T5660FBA-C DDR2 DIMM
Text: Rev. 1.0, Jul. 2010 M393T2863FBA M393T5663FBA M393T5660FBA M393T5160FBA 240pin Registered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M393T2863FBA
M393T5663FBA
M393T5660FBA
M393T5160FBA
240pin
M393T2863FBA-C
serial presence detect samsung 2010
K4T1G084QF
800cl5
M393T5660FBA-C
DDR2 DIMM
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XC5L
Abstract: No abstract text available
Text: Preliminary KMM466S924T_ 144pin SDRAM SODiMM KMM466S924T SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S924T is a 8M bit x 64 Synchronous
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OCR Scan
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KMM466S924T_
144pin
KMM466S924T
8Mx64
8Mx16
400mii
144-pin
XC5L
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str 8045
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Memory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795
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OCR Scan
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124th
233-4121x207
275-6391X225
str 8045
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