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    SAMSUNG CHIP 820 Search Results

    SAMSUNG CHIP 820 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    SAMSUNG CHIP 820 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    nc10 samsung

    Abstract: samsung crt monitor circuit diagram 88E8057 10000NF samsung r540 22p smd samsung kbc 945GSE Express Chipset Schematic Samsung NC10 headphone amp schematic diagram n270
    Text: NC10 A B C D 4 SAMSUNG PROPRIETARY 3 4 : PV : 1.0 : 2008.08.20 Dev. Step Revision T.R. Date 3 APPROVAL : PCB Part No CHECK : WINCHESTER MAIN Model Name CPU : INTEL DIAMONDVILLE Chip Set : INTEL 945GSE Remarks : DRAW Page. 1 Page. 2 Page. 3 Page. 4 Page. 5


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    945GSE Sheet44 Sheet45 Sheet46 Sheet47 Sheet48 Sheet49 Sheet50 Sheet51 Sheet52 nc10 samsung samsung crt monitor circuit diagram 88E8057 10000NF samsung r540 22p smd samsung kbc 945GSE Express Chipset Schematic Samsung NC10 headphone amp schematic diagram n270 PDF

    nc10 samsung

    Abstract: 22p smd samsung crt monitor circuit diagram schematic diagram n270 schematic lcd inverter samsung IDTCV179BNLG 88E8057 945GSE Express Chipset Schematic SC454 Voltage Regulator Circuit e20 220v
    Text: NC10 A B C D 4 SAMSUNG PROPRIETARY 3 4 : PV : 1.0 : 2008.08.20 Dev. Step Revision T.R. Date 3 APPROVAL : PCB Part No CHECK : WINCHESTER MAIN Model Name CPU : INTEL DIAMONDVILLE Chip Set : INTEL 945GSE Remarks : DRAW Page. 1 Page. 2 Page. 3 Page. 4 Page. 5


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    945GSE Sheet45 Sheet46 Sheet47 Sheet48 Sheet49 Sheet50 Sheet51 Sheet52 Isl6256a nc10 samsung 22p smd samsung crt monitor circuit diagram schematic diagram n270 schematic lcd inverter samsung IDTCV179BNLG 88E8057 945GSE Express Chipset Schematic SC454 Voltage Regulator Circuit e20 220v PDF

    8232h

    Abstract: ta 8232h DSP modulo multiplier S3CB018 MAC816 79AH
    Text: S3CB018/FB018 1 PRODUCT OVERVIEW PRODUCT OVERVIEW CALMRISC OVERVIEW The S3CB018/FB018 single-chip CMOS microcontroller is designed for high performance using Samsung’s newest 8-bit CPU core, CalmRISC. CalmRISC is an 8-bit low power RISC microcontroller. Its basic architecture follows Harvard style, that is, it has


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    S3CB018/FB018 S3CB018/FB018 8232h ta 8232h DSP modulo multiplier S3CB018 MAC816 79AH PDF

    Untitled

    Abstract: No abstract text available
    Text: S3CB519/FB519 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3CB519/FB519 single-chip CMOS microcontroller is designed for high performance using Samsung’s new 8-bit CPU core, CalmRISC. CalmRISC is an 8-bit low power RISC microcontroller. Its basic architecture follows Harvard style, that is, it has


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    S3CB519/FB519 S3CB519/FB519 100-QFP S3FB519 S3CB519 S3FB519 S3CB519 32-Kbyte PDF

    Untitled

    Abstract: No abstract text available
    Text: Specification of Automotive MLCC • Supplier : Samsung electro-mechanics  Samsung P/N :  Product : Multi-layer Ceramic Capacitor CAP, 820㎊, 50V, ±5%, C0G, 0603  Description :  AEC-Q 200 Specified CL10C821JB81PNC A. Samsung Part Number ① Series


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    CL10C821JB81PNC 30PPM/â 10sec. J-STD-020 PDF

    DC90

    Abstract: sltncw15026n 15200K
    Text: ISSUE NO : LEDRR-08072218 Rev: 000 DATE OF ISSUE : 2008. 08.08 SPECIFICATION MODEL : SLTNCW15026N Approved rank : VF A1, A2, A3, A4, A5 , CIE(A, B, C, D, E, F, G, H), Iv(S) WHITE TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS


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    LEDRR-08072218 SLTNCW15026N SLTNCW15026N) DC90 sltncw15026n 15200K PDF

    SLTNCW2502AN

    Abstract: 10450K DC90
    Text: ISSUE NO : 08083789 Rev: 000 DATE OF ISSUE : 2008. 04. 10 SPECIFICATION MODEL : SLTNCW2502AN Approved rank : VF S , CIE(A, B, C, D, E, F, G, H), Iv(S) WHITE TOP VIEW CUSTOMER : CUSTOMER : 대표 승인원 DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS DRAWN


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    SLTNCW2502AN SLTNCW2502AN) SLTNCW2502AN 10450K DC90 PDF

    SLTNCW2502AN

    Abstract: No abstract text available
    Text: ISSUE NO : LEDRR-07048208 Rev: 000 DATE OF ISSUE : 2008. 01. 29 SPECIFICATION MODEL : SLTNCW2502AN Approved rank : VF S , CIE(A, B, C, D, E, F, G, H), Iv(S) WHITE TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED Preliminary SAMSUNG ELECTRO-MECHANICS DRAWN


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    LEDRR-07048208 SLTNCW2502AN SLTNCW2502AN) SLTNCW2502AN PDF

    SPMWHT5225D5W

    Abstract: samsung led 5630 5630 samsung 5630 PKG SPMWHT5225D5WAR0S0 samsung LED samsung chip 820 Samsung 5630 LED 5630 5630 led
    Text: Rev: 001 ISSUE NO : LMPRR-11003328 DATE OF ISSUE : 2011. 04. 13 SPECIFICATION MODEL : SPMWHT5225D5WAR0S0 Approved rank : VF A1, A2, A3, A4, A5 , CIE(R1, R2, R3, R4, R5, R6, R7, R8), IV(S1, S2) 5630 CRI80 WHITE LED R0 RANK CUSTOMER : CHECKED APPROVED SAMSUNG LED


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    LMPRR-11003328 SPMWHT5225D5WAR0S0 CRI80 SPMWHT5225D5WAR0S0) SPMWHT5225D5W samsung led 5630 5630 samsung 5630 PKG SPMWHT5225D5WAR0S0 samsung LED samsung chip 820 Samsung 5630 LED 5630 5630 led PDF

    MC86000

    Abstract: mc8600 circuit diagram adsl modem board INTEL 8086 teaklite mc68000 8086 logic diagram i8086 samsung ap 72MHZ RX
    Text: S5N8947 Application Note 16/32-Bit RISC Microcontroller S5N8947 16/32-BIT RISC MICRO-CONTROLLER 1 INTRODUCTION The S5N8947 MCU has several functional blocks and interface buses suitable to the applications for the DSL external modem. It has two ports of 10/100BaseT Ethernet interface, SAR UTOPIA interface, full rate USB bus,


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    S5N8947 16/32-Bit S5N8947 10/100BaseT RS232C S5N8950 S5N8950. MC86000 mc8600 circuit diagram adsl modem board INTEL 8086 teaklite mc68000 8086 logic diagram i8086 samsung ap 72MHZ RX PDF

    Untitled

    Abstract: No abstract text available
    Text: Specification of Automotive MLCC • Supplier : Samsung electro-mechanics  Samsung P/N :  Product : Multi-layer Ceramic Capacitor CAP, 82㎊, 50V, ±5%, C0G, 0603  Description :  AEC-Q 200 Specified CL10C820JB81PNC A. Samsung Part Number ① Series


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    CL10C820JB81PNC 30PPM/â 10sec. J-STD-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: Specification of Automotive MLCC • Supplier : Samsung electro-mechanics  Samsung P/N :  Product : Multi-layer Ceramic Capacitor CAP, 82㎊, 50V, ±5%, C0G, 0805  Description :  AEC-Q 200 Specified CL21C820JB61PNC A. Samsung Part Number ① Series


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    CL21C820JB61PNC 30PPM/â 10sec. J-STD-020 PDF

    ARM9TDMI

    Abstract: ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung
    Text: V S MSUNG STDH150 ELECTRONICS STDH150 Standard Cell 0.13um System-On-Chip ASIC Dec 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 34.3 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


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    STDH150 STDH150 ARM920T/ARM940T, ARM9TDMI ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung PDF

    ARM dual port SRAM compiler

    Abstract: DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ
    Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


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    STD150 STD150 ARM920T/ARM940T, ARM dual port SRAM compiler DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ PDF

    ARM1020E

    Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
    Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


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    STD150 STD150 ARM920T/ARM940T, ARM1020E samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T PDF

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


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    S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet PDF

    MDL111

    Abstract: 20MHZ PLL2013X STDM110 104 ceramic capacitor
    Text: PLL 6 Contents PLL2013X . 6-1 PLL2013X General Description Features The PLL2013X is a Phase-Locked Loop PLL Frequency Synthesizer constructed in CMOS on single


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    PLL2013X PLL2013X 20-170MHz 170MHz STDM110 MDL111 20MHZ STDM110 104 ceramic capacitor PDF

    ARM7 samsung

    Abstract: S5N8947X 8309 o1m 147 ADSL Modem circuit diagram ADSL MODEM PROGRAMMING Samsung S ARM TAG 70M CRC-10 S5N8947
    Text: S5N8947X MCU for ADSL/Cable Modem Revision 0.1 May. 23, 2000 SAMSUNG ELECTRONICS PROPRIETARY Copyright 1999-2000 Samsung Electronics, Inc. All Rights Reserved S5N8947 (ADSL/Cable Modem MCU) ELECTRONICS CONTENTS 1. GENERAL DESCRIPTION .4


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    S5N8947X S5N8947 ARM7 samsung S5N8947X 8309 o1m 147 ADSL Modem circuit diagram ADSL MODEM PROGRAMMING Samsung S ARM TAG 70M CRC-10 S5N8947 PDF

    C G 774 6-1

    Abstract: No abstract text available
    Text: SMF-03010 ELECTRONICS POWGF OptÌlTIÌZGCl Samsung Microwave Semiconductor GaAs FET 2-14 GHz Description Features The SMF-03010 is a packaged version of the SMF-03000. The chip is a 300 urn n-channel MESFET with 0.5 im gate length, utilizing Samsung Microwave’s power optimized P5


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    SMF-03010 SMF-03010 SMF-03000. SMF-03000 C G 774 6-1 PDF

    HMF-1200

    Abstract: samsung 1622
    Text: SAMSUNG ELECTRONICS INC h bGE ]> • 7 ^ 4 1 4 2 QQllfi? <104 * 8 H M F -12020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +27.5 dBm Output Power with 7 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers


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    HMF-12020-200 HMF12000-200. HMF-1200 samsung 1622 PDF

    SMF12000-200

    Abstract: No abstract text available
    Text: SMF-12020 ELECTRO NICS Sam sung M icrow ave Sem iconductor P O W G I* O p t i m i z e d GaAs FET 2-12 GHz Description Features The SMF-12020-200 is a packaged version of the SMF12000-200. The chip is a 1200 jam n-channel MESFET with 0.5 p.m gate length, utilizing Samsung Microwave’s power


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    SMF-12020 SMF-12020-200 SMF12000-200. SMF-12000-200 SMF12000-200 PDF

    27408

    Abstract: MSC 501 302 D3053 26138
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northeast North Central Northwest 119 Russell S treet Littleton, MA 01460 TEL: 508 486-0700 FAX: (508) 486-8209 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: (708) 775-1050 FAX: (708) 775-1058 3655 North First Street


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    124th 516J-273-5500 105th 27408 MSC 501 302 D3053 26138 PDF

    KM68B1002J-10

    Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
    Text: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM KM68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


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    KM68B1002 KM68B1002J-8 175mA KM68B1002J-9 KM68B1002J-10: 165mA KM68B1002J-12: 155mA KM68B1002J-15 KM68B1002J-10 KM68B1002J-12 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF