74lvc3245
Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04
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128MB
0000h
0001h
0002h
12bit
16bit
74lvc3245
SAMSUNG NAND FLASH
SAMSUNG NAND FLASH TRANSLATION LAYER
samsung NAND
date code marking samsung Nand
"bad block" smartmedia ecc
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
samsung hdd f3
SmartMedia Logical Format
SAMSUNG NAND FTL
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SAMSUNG NAND Flash Qualification Report
Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.
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128Mb
industria1980
30pcs
48TSOP1
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
NAND "read disturb" Samsung
NAND Qualification Reliability
NAND Flash Qualification Reliability
NAND qualification
NAND read disturb
63-TBGA
K9F2808U0C-YCB0
K9F2808U0C-YIB0
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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120GB
128MB
256MB
128MB
512MB
K9HCG08U5M
K9WBG08U1M
K9LAG08U0M-PCB0
KMAFN0000M
KMBGN0000A
K9MDG08U5M-PCB0
K4M56323PI
MCCOE32GQMPQ-M
K4M56163PI
movinand
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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K9K2G08U0A
K9K2G08U0A-Y
K9K2G08U0A-V
K9K2G08U0A
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KM29W32000AIT
Abstract: KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung
Text: KM29W32000AT, KM29W32000AIT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000AT,
KM29W32000AIT
KM29V32000
KM29N32000
KM29W32000
KM29W32000AIT
KM29N32000
400F
KM29W32000AT
flash row column read write "program and data" 19
Resister 0805 samsung
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY KM29W16000BTS Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000BTS
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KM29W16000BIT
Abstract: 400F KM29W16000BT
Text: KM29W16000BT, KM29W16000BIT Preliminary FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000BT,
KM29W16000BIT
KM29W16000BIT
400F
KM29W16000BT
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KM29W32000ATS
Abstract: No abstract text available
Text: KM29W32000ATS Advance Information FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000ATS
KM29W32000ATS
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KM29U128AIT
Abstract: KM29U128AT NAND flash memory
Text: Advanced Information FLASH MEMORY KM29U128AT, KM29U128AIT Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Advanced Information The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29U128AT,
KM29U128AIT
KM29U128AA16M
48-pin
KM29U128AIT
KM29U128AT
NAND flash memory
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Untitled
Abstract: No abstract text available
Text: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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KM29U64000AT,
KM29U64000AIT
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29V040
Abstract: No abstract text available
Text: KM29V040T, KM29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Ftevfrfon Np, History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 Remark The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29V040T,
KM29V040IT
29V040
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K9F4G08U0M
Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M-Y
K9F4G08U0M
K9F4G08U
52-ULGA
52ULGA
K9K8G08U1M
K9F4G08U0M-ICB0
K9F4G08
81h-10h
K9F4G08U0M-YCB
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KM29W16000AIT
Abstract: KM29W16000AT
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000AT,
KM29W16000AIT
KM29W16000AIT
KM29W16000AT
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KM29W16000ATS
Abstract: No abstract text available
Text: KM29W16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000ATS
KM29W16000ATS
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K9F1G08
Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9F1G08Q0A
K9F1G08D0A
K9F1G08U0A
K9F1G08Q0A-Y
K9F1G08
K9F1G08U0A
K9F1G08X0A
K9F1G08Q0A
ADD12
K9F1G08D0A-Y
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400F
Abstract: KM29N32000 KM29W32000TS
Text: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000TS
KM29V32000
KM29N32000
KM29W32000
400F
KM29N32000
KM29W32000TS
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W32000T, KM29W32000IT 4M X 8 Bit NAND Flash Mem ory History D raft Date R e m a rk 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final Revision No. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000T,
KM29W32000IT
KM29V32000
KM29N32000
KM29W32000
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000AT,
KM29W16000AIT
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PDF
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KM29U64000IT
Abstract: KM29U64000T 400F
Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29U64000T,
KM29U64000IT
KM29U64000IT
KM29U64000T
400F
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KM29N040
Abstract: KM29V040IT KM29V040T km29v040
Text: KM29V040T, KM29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29V040T,
KM29V040IT
KM29N040
KM29V040IT
KM29V040T
km29v040
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PCMCIA FLASH CARD 10MB
Abstract: S3C49F9X flashdisk controller Interfacing Flash Disk samsung 1Gb nand flash S3C49 compact flash controller
Text: S3C49F9X SOLID DISK CONTROLLER INRODUCTION S3C49F9X User’s Manual Compact Flash Controller Samsung Electronics Co.,LTD Semiconductor LSI System Division 1 S3C49F9X SOLID DISK CONTROLLER 1 INRODUCTION PRODUCT OVERVIEW Samsung's S3C49F9X is NAND flash memory controller which can control flash memories as solid state
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S3C49F9X
512Mbit
35-um
100TQFP
100-pin
PCMCIA FLASH CARD 10MB
flashdisk controller
Interfacing Flash Disk
samsung 1Gb nand flash
S3C49
compact flash controller
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S3C49F9X
Abstract: 432t
Text: S3C49F9X SOLID DISK CONTROLLER INRODUCTION S3C49F9X User’s Manual Compact Flash Controller Samsung Electronics Co.,LTD Semiconductor LSI System Division 1 S3C49F9X SOLID DISK CONTROLLER 1 INRODUCTION PRODUCT OVERVIEW Samsung's S3C49F9X is NAND flash memory controller which can control flash memories as solid state
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S3C49F9X
S3C49F9X
512Mbit
35-um
100-TQFP
100-pin
432t
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"nand flash memory"
Abstract: KM29N040 KM29N040IT KM29N040T
Text: FLASH MEMORY KM29N040T, KM29N040IT Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29N040T,
KM29N040IT
"nand flash memory"
KM29N040
KM29N040IT
KM29N040T
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2048-Bits
Abstract: P128 P256 P512 P1024P1024 nand flash
Text: NAND Flash ECC Algorithm Error Checking & Correction June 2004 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in
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256bytes
22bit
2048bits
16bit
2048-Bits
P128
P256
P512
P1024P1024
nand flash
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