SAMSUNG NAND Flash Qualification Report
Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.
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128Mb
industria1980
30pcs
48TSOP1
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
NAND "read disturb" Samsung
NAND Qualification Reliability
NAND Flash Qualification Reliability
NAND qualification
NAND read disturb
63-TBGA
K9F2808U0C-YCB0
K9F2808U0C-YIB0
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Untitled
Abstract: No abstract text available
Text: ACT8897 Rev 2, 05-Sep-13 Advanced PMU for Samsung S5PC100, S5PC110 and S5PV210 Processors FEATURES GENERAL DESCRIPTION • Optimized for Samsung S5PC100, S5PC110 and The ACT8897 is a complete, cost effective, highlyefficient ActivePMUTM power management solution,
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ACT8897
05-Sep-13
S5PC100,
S5PC110
S5PV210
ACT8897
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J1587
Abstract: FM24653 ISO-14001 samsung appl ISO7816 smart card samsung lcd inverter pinout
Text: USER'S MANUAL S3F4A2FJ 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
J1587
FM24653
ISO-14001
samsung appl
ISO7816 smart card
samsung lcd inverter pinout
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8937A
Abstract: A33KY25 S5PV210 application
Text: ACT8937A Rev 1, 22-Oct-12 Advanced PMU for Samsung S5PC100, S5PC110 and S5PV210 Processors FEATURES GENERAL DESCRIPTION • Optimized for Samsung S5PC100, S5PC110 and The ACT8937A is a complete, cost effective, highlyefficient ActivePMUTM power management solution,
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ACT8937A
22-Oct-12
S5PC100,
S5PC110
S5PV210
ACT8937A
8937A
A33KY25
S5PV210 application
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sof11
Abstract: ISO-14001 J1587 FM24653
Text: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
sof11
ISO-14001
J1587
FM24653
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FM24653
Abstract: ISO-14001 J1587 A 3131 IC 80-TQF P15-24 Philips PM 2411
Text: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
FM24653
ISO-14001
J1587
A 3131 IC
80-TQF
P15-24
Philips PM 2411
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ST191
Abstract: sof11
Text: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR July 2009 Revision 1.10 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2009 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
ST191
sof11
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S3F4A2F
Abstract: st stt 128 FM24653 ISO-14001 J1587 P873 p029
Text: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
S3F4A2F
st stt 128
FM24653
ISO-14001
J1587
P873
p029
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Untitled
Abstract: No abstract text available
Text: USER'S MANUAL S3F4A2FJ 16/32-BIT RISC MICROPROCESSOR December 2008 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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16/32-BIT
80-TQFP-1212
80-TQFP-1212
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SMFV004A
Abstract: No abstract text available
Text: SmartMediaTM SMFV004A Document Title 4M x 8 bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark April 10th 1999 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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SMFV004A
SMFV004A
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Untitled
Abstract: No abstract text available
Text: Preliminary SmartMediaTM SMFV002A Document Title 2M x 8 Bit SmartMediaTM Revision History Revision No. History 0.0 Data Sheet, 1999 Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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SMFV002A
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Untitled
Abstract: No abstract text available
Text: Preliminary SmartMediaTM SMFV008A Document Title 8M x 8 Bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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SMFV008A
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LPC250SM
Abstract: LPC241SM LPC247SM solar cell operating temperature range IEC61215 IEC61730 LPC250S LPC244SM LPC235SM LPC238SM
Text: Samsung takes on the Solar Challenge Developing viable solar power systems is one of the great tasks facing the world today, and Samsung is now in the race. We are poised to repeat our success in solar power generation. Our track record speaks for itself.
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LPC235SM
LPC238SM
LPC241SM
LPC244SM
LPC247SM
LPC250SM
LPC241SM
LPC247SM
solar cell operating temperature range
IEC61215
IEC61730
LPC250S
LPC244SM
LPC235SM
LPC238SM
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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K9K2G08U0A
K9K2G08U0A-Y
K9K2G08U0A-V
K9K2G08U0A
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8934A
Abstract: A33KY25
Text: ACT8934A Rev 1, 22-Oct-12 Advanced PMU for Samsung S3C2416/S3C2450 FEATURES GENERAL DESCRIPTION • Optimized for Samsung S3C2416/S3C2450 The ACT8934A is a complete, cost effective, highlyefficient ActivePMUTM power management solution, optimized for the unique power, voltagesequencing, and control requirements of the
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ACT8934A
22-Oct-12
S3C2416/S3C2450
ACT8934A
S3C2416/S3C2450
TQFN55-40
8934A
A33KY25
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S418-xyz
Abstract: LPC247SM 6-1394461-2 LPC241SM LPC238SM LPC250SM IEC61215 IEC61730 LPC235SM LPC244SM
Text: Samsung takes on the Solar Challenge Developing viable solar power systems is one of the great tasks facing the world today, and Samsung is now in the race. We are poised to repeat our success in solar power generation. Our track record speaks for itself.
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LPC235SM
LPC238SM
LPC241SM
LPC244SM
LPC247SM
S418-xyz
LPC247SM
6-1394461-2
LPC241SM
LPC238SM
LPC250SM
IEC61215
IEC61730
LPC235SM
LPC244SM
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LPC247SM
Abstract: LPC235SM LPC250SM SAMSUNG SOLAR 250 IEC61215 LPC238SM samsung 649 LPC241SM LPC244SM IEC61730
Text: Samsung takes on the Solar Challenge Developing viable solar power systems is one of the great tasks facing the world today, and Samsung is now in the race. We are poised to repeat our success in solar power generation. Our track record speaks for itself.
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LPC235SM
LPC238SM
LPC241SM
LPC244SM
LPC247SM
LPC247SM
LPC235SM
LPC250SM
SAMSUNG SOLAR 250
IEC61215
LPC238SM
samsung 649
LPC241SM
LPC244SM
IEC61730
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Untitled
Abstract: No abstract text available
Text: Advanced Information SmartMediaTM SMFDV064 Document Title 64M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 History Draft Date Remark Initial issue April 10th 1999 Advanced Information The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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SMFDV064
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KM29W16000BIT
Abstract: 400F KM29W16000BT
Text: KM29W16000BT, KM29W16000BIT Preliminary FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000BT,
KM29W16000BIT
KM29W16000BIT
400F
KM29W16000BT
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Untitled
Abstract: No abstract text available
Text: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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KM29U64000AT,
KM29U64000AIT
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K9F4G08U0M
Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M-Y
K9F4G08U0M
K9F4G08U
52-ULGA
52ULGA
K9K8G08U1M
K9F4G08U0M-ICB0
K9F4G08
81h-10h
K9F4G08U0M-YCB
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K9F1G08
Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9F1G08Q0A
K9F1G08D0A
K9F1G08U0A
K9F1G08Q0A-Y
K9F1G08
K9F1G08U0A
K9F1G08X0A
K9F1G08Q0A
ADD12
K9F1G08D0A-Y
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Untitled
Abstract: No abstract text available
Text: Preliminary SmartMediaTM K9S1608V0B-SSB0 Document Title 2M x 8 Bit SmartMediaTM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Data Sheet, 1999 April 10th 1999 0.1 Changed device name - SMFV002A -> K9S1608V0B-SSB0 Sep. 15th 1999 The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9S1608V0B-SSB0
SMFV002A
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MAXIM 1535 CE
Abstract: No abstract text available
Text: S M F -06100 ELECTRONICS Samsung M icrow ave Sem iconductor G ain O ptim ized G aAs FET 2 -2 0 GHz Description Features The SMF-06100 is a 600 xm n-channel MESFET with 0.5 urn gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and
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SMF-06100
MAXIM 1535 CE
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