Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SAMSUNG RAM CIRCUIT Search Results

    SAMSUNG RAM CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG RAM CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: M464S0924ETS PC133 SODIMM M464S0924ETS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous GENERAL DESCRIPTION FEATURE The Samsung M464S0924ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M464S0924ETS M464S0924ETS PC133 8Mx64 8Mx16, M464S0924DTE 400mil 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5321200AW D RAM Module ELECTRONICS KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS


    OCR Scan     		KMM5321200AW KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin PDF

    KM428C128

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 SAMSUNG ELECTRONICS INC 7 = ^ 4 1 4 2 OaiGbMb T 42E D 128KX8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 12 8 K X 8 bit Dual


    OCR Scan     		KM428C128 128KX8 428C128 150ns 180ns 75ansfer D01QL7S 40-PIN KM428C128 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual


    OCR Scan     		D01bb52 KM428C256, KM428V256 512x8 KM428C/V256 110ns 130ns 150ns 50nsCYCLE PDF

    Untitled

    Abstract: No abstract text available
    Text: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4M x6 4 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		M366S424CTF KMM366S424CTF 4Mx16, 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5401000B/BG GD1514b 1Mx40 KMM5401000B bitsx40 20-pin 72-pin 110ns KMM5401000B-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM540512CM 512Kx40 KMM540512CM isa512Kbitsx40 256Kx4 20-pin 72-pin KMM540512CM-6 KMM540512CM-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		M5324000V/VG/VP KMM5324000V bitsx32 24-pin 72-pin 110ns KMM5324000V-7 130ns KMM5324000V-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual


    OCR Scan     		G01b7Db KM428C258 KM428C258 110ns 130ns 150ns 40-PIN 40/44-PIN PDF

    samsung LRA

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM536512W3/W3G KMM536512W3 a512K 40-pin 72-pin 22fiF KMM536512W3-7 130ns KMM536512W3-8 samsung LRA PDF

    Untitled

    Abstract: No abstract text available
    Text: PC 100 SDRAM MODULE KM M366S823CTS KMM366S823CTS SDRAM DIMM 8M x6 4 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823CTS is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		M366S823CTS KMM366S823CTS 400mil 168-pin KM48S8030CT PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		DD147b3 KMM594100N KMM594100N KM44C4100J 20-pin KM41C4000BJ 30-pin KMM5364100N-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5402000BM 2Mx40 KMM5402000BM bitsx40 20-pin 72-pin 22fiF 110ns KMM5402000BM-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM584000B KMM584000B KM41C4000BJ 20-pin 30-pin 22/iF KMM584000B-6 110ns M584000B-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E J> • 7 ^ 4 1 4 5 GG151Q1 3b5 m S tlG K KMM584020B DRAM MODULES 4M x8 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020B is a 4M bitsx8 Dynamic RAM high density memory module. The Samsung KMM584020B


    OCR Scan     		GG151Q1 KMM584020B KMM584020B 20-pin 30-pin KMM584020B-6 110ns KMM584020B-7 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual


    OCR Scan     		KM424C257 110ns 130ns 150ns 28-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual


    OCR Scan     		KM424C257 125ns 28-PIN 0D13625 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM581000B 581000B KMM581 KM41C1OOOBJ 20-pln 30-pin 581000B- 130ns 150ns PDF

    KMM581000BN

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung


    OCR Scan     		001S0Ã KMM581020BN KMM581020BN KMM581000BN KM44C1000BU 20-pin 30-pin 22/tF 110ns KMM581020BN-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		GG1472D KMM532512W/WG KMM532512W 40-pin 72-pin 22jiF 130ns 150ns 180ns PDF

    D1377

    Abstract: TCA 965 BP KM424C256A
    Text: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)


    OCR Scan     		0G13771 KM424C256A KM424C256A 256Kx4 28-PIN D1377 TCA 965 BP PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591000BN KMM591000BN KM44C1000BJ 20-pin KM41C1000CJ 30-pin 110ns KMM591000BN-7 PDF