Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS0J107KBAR • User Part No : • Description : CAP,TANTAL,100㎌,6.3V,±10%,3528-19 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ②
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TCSCS0J107KBAR
2000/-0hrs
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A476MAAR • User Part No : • Description : CAP,TANTAL,47㎌,10V,±20%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1A476MAAR
500hours'
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS0J336MPAR • User Part No : • Description : CAP,TANTAL,33㎌,6.3V,±20%,2012-12 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS0J336MPAR
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1E155KAAR • User Part No : • Description : CAP,TANTAL,1.5㎌,25V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1E155KAAR
2000/-0hrs
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCE0J476MAAR1000 • User Part No : • Description : CAP,TANTAL,47㎌,6.3V,±20%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ②
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TCSCE0J476MAAR1000
2000/-0hrs
10sec.
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TCSCS1A475KAAR
Abstract: TCSCS1A475
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A475KAAR • User Part No : • Description : CAP,TANTAL,4.7㎌,10V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1A475KAAR
2000/-0hrs
10sec.
TCSCS1A475KAAR
TCSCS1A475
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TCSCS1A106K
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A106KAAR • User Part No : • Description : CAP,TANTAL,10㎌,10V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1A106KAAR
2000/-0hrs
10sec.
TCSCS1A106K
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Samsung Tantalum Capacitor
Abstract: TCSCN1C105KAAR
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCN1C105KAAR • User Part No : • Description : CAP,TANTAL,1㎌,16V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCN1C105KAAR
2000/-0hrs
10sec.
Samsung Tantalum Capacitor
TCSCN1C105KAAR
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1V475KCAR • User Part No : • Description : CAP,TANTAL,4.7㎌,35V,±10%,6032-25 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1V475KCAR
2000/-0hrs
10sec.
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UtRAM
Abstract: specification of Logic Analyzer
Text: SEC-Mobile-UtRAM UtRAM and UtRAM2’s Frequently violated parameters Application Note Version 1.0, April 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile
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BRO-09-DRAM-001
samsung eMMC 4.5
eMMC
samsung* lpddr2
lpddr2
SAMSUNG emmc
emmc 4.5
emmc samsung
SAMSUNG moviNAND
lpddr2 mcp
samsung lpddr2
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MSM 7227
Abstract: S6E63D6 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module
Text: S6E63D6 Rev.1.10 MOBILE DISPLAY DRIVER IC Property of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S6E63D6 Data Sheet_REV 1.10 Mobile Display Driver IC Trademark & Copyright Information Copyright © 2007-2007 Samsung Electronics Co., Ltd. All Rights Reserved.
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S6E63D6
S6E63D6
MSM 7227
MSM 7230
MSM 7225
80-SYSTEM
MDDI
IC 7224
R68H
amoled samsung
AMOLED Display module
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSHS0J226MPAR • User Part No : • Description : CAP,TANTAL,22㎌,6.3V,±20%,2012-12 • Last Revision Date :December.28.2009 • Date :November 16. 2009
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TCSHS0J226MPAR
Perfo150%
10sec.
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung
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KMM5401000B/BG
GD1514b
1Mx40
KMM5401000B
bitsx40
20-pin
72-pin
110ns
KMM5401000B-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung
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M5324000V/VG/VP
KMM5324000V
bitsx32
24-pin
72-pin
110ns
KMM5324000V-7
130ns
KMM5324000V-8
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samsung LRA
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung
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KMM536512W3/W3G
KMM536512W3
a512K
40-pin
72-pin
22fiF
KMM536512W3-7
130ns
KMM536512W3-8
samsung LRA
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Untitled
Abstract: No abstract text available
Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B
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G01S111
KMM594020B
KMM594020B
20-pin
30-pin
22/iF
KMM594020B-6
110ns
KMM594020B-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung
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KMM5916000/T
KMM5916000/T
KM41C16000/T
24-pin
30-pin
22/uF
KMM5916000-6
110ns
KMM5916000-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DD1S1S2 Ô27 I SMGK KMM5401000BM DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000BM is a 1M b itsx4 0 Dynamic RAM high density m em ory module. The Samsung
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KMM5401000BM
1Mx40
KMM5401000BM
20-pin
72-pin
22/iF
110ns
KMM5401000BM-7
130ns
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KMM5361000
Abstract: KMM5361000/A
Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung
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KMM5361000
KMM5361000
bitsX36
20-pin
72-pin
150ns
KMM5361000-10
KMM5361000-
KMM5361000/A
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Untitled
Abstract: No abstract text available
Text: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung
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KMM5402000BM
2Mx40
KMM5402000BM
bitsx40
20-pin
72-pin
22fiF
110ns
KMM5402000BM-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung
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KMM584000B
KMM584000B
KM41C4000BJ
20-pin
30-pin
22/iF
KMM584000B-6
110ns
M584000B-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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KMM581000B
581000B
KMM581
KM41C1OOOBJ
20-pln
30-pin
581000B-
130ns
150ns
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SP16K
Abstract: kmm5362003
Text: SAMSUNG ELECTRONICS b?E D INC • ? cJbmHH D015BbB bS7 I KMM5362003/G SP16K DRAM MODULES 2M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5362003/G is a 2M b itx 3 6 Dynamic RAM high density m em ory module. The Samsung
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D015BbB
SP16K
KMM5362003/G
KMM5362003-7
KMM5362003-8
110ns
150ns
in20-pin
SP16K
kmm5362003
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