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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DD1S1S2 Ô27 I SMGK KMM5401000BM DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000BM is a 1M b itsx4 0 Dynamic RAM high density m em ory module. The Samsung


    OCR Scan     		PDF KMM5401000BM 1Mx40 KMM5401000BM 20-pin 72-pin 22/iF 110ns KMM5401000BM-7 130ns

    30 pin simm

    Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
    Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM


    OCR Scan     		PDF KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM

    TCA 700 Y

    Abstract: No abstract text available
    Text: KMM5401000B/BG/BM DRAM MODULES 1 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: t|»C • • • • • • • tcAc The Samsung KMM5401000B is a 1M bits x 40 Dynam­ ic RAM high density memory module. The Samsung KM M5401000B consist of ten CMOS 1M x 4 bit DRAMs


    OCR Scan     		PDF KMM5401000B/BG/BM KMM5401000B-6 KMM5401000B-7 KMM5401000B-8 110ns 130ns 150ns KMM5401000B M5401000B 20-pin TCA 700 Y