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    SB TRANSISTORS Search Results

    SB TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SB TRANSISTORS Datasheets Context Search

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    ISO ultrasonic sensor standards symbols

    Abstract: automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML
    Text: Industrial Automation Products SB IAMSG-4 2005 OmronElectronics LLC Printed in the U.S.A. 1/05/30M, 10M Master Selection Guide PHOTOELECTRIC SENSORS AMPLIFIED PHOTOMICROSENSORS PROXIMITY SENSORS LIMIT SWITCHES OTHER SENSOR SOLUTIONS PUSHBUTTONS, SWITCHES AND PILOT


    Original     		PDF iF-06 P7LF-06 P7LF-06 PFP-100N PFP-50N 1/05/30M, ISO ultrasonic sensor standards symbols automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML

    ON SEMICONDUCTOR 613

    Abstract: metal oxide in capacitor
    Text: 0.7µ µm 5V CMOS Process ID: SA/SB [C08n] Applications Main Process Flow • Mixed signal embedded systems / • N Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )


    OCR Scan     		PDF 2SB1412 2SB1386 2SD2118 2SD2166. SC-62 3B1326/2SB1436

    2SB1233

    Abstract: 2SB1233A
    Text: Power Transistors 2 SB 1233 , 2 SB 1233 A 2SB 1233, 2SB1233A Silicon PNP Epitaxial Planar Type Package Dimensions P&wer Amplifier Unit : mm • Features • High co llector-em itter voltage 3.7max. 7.3max. V ceo 0.9 ± 0 . 1 O.Smax.- • Wide area of safety operation (ASO)


    OCR Scan     		PDF 2SB1233, 2SB1233A 2SB1233 2SB1233A

    video output transistor

    Abstract: VP401 transistor 2sd1878 2SD1878 video output transistors
    Text: Discrete Devices for Monitors Principal Process Technologies—Features/Functions V ideo output transistors [FB E T /L SB T ] D ouble-layer electrode structure for high fT, low capacitance and high w ithstand voltage. H orizontal deflection output transistors


    OCR Scan     		PDF /VP503 \VP401 2SD1878/9 2S01884/5 2SD1876/7 2S0188Z/3 video output transistor VP401 transistor 2sd1878 2SD1878 video output transistors

    UC493

    Abstract: UC493AC unitrode Applications Note U-96A 3.9V ZENER DIODE unitrode Applications Note uc493a UC494
    Text: 9347963 UNITRODE CORP 92D 09860 D T-SB-//-3I LINEAR INTEGRATED CIRCUITS u g g ft Jjggjftg Advanced Regulating Pulse Width Modulators UC495A UC495B UC495AC UC495BC D • TBHÖSII QQÜTÖbQ 7 ■UNI FEATURES • Dual uncommitted 40V, 200mA output transistors


    OCR Scan     		PDF UC495A UC495B UC495AC UC495BC 200mA UC493A/UC495B: UC495A/UC495B: cUC495BC UC493 UC493AC unitrode Applications Note U-96A 3.9V ZENER DIODE unitrode Applications Note uc493a UC494

    Untitled

    Abstract: No abstract text available
    Text: I I b^E D • bb53T31 DD27^Sb 43H H A P X JA100 JA101 A PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively. QUICK REFERENCE DATA


    OCR Scan     		PDF bb53T31 JA100 JA101 JC500 JC501 0027T5fi

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEHICOND BD242, BD242A, BD242B, BD242C Sb E D • 43D2271 SECTOR File Number 0G4Dbb4 672 SGb « H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Speed-Switching Applications Features: ■ 40 W at 2S°C case temperature


    OCR Scan     		PDF BD242, BD242A, BD242B, BD242C 43D2271 BD241, BD241A, BD241B, BD241C

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135

    2n6673

    Abstract: 2n6671 RCA8767
    Text: 7=35 ~ / 9 2N6671, 2N6672, 2N6673 HARRIS SEMICON] SECTOR File Number Sb E D 1090 43 D2 271 GOMObOfl 7fl7 « H A S 5-A SwitchM a* Power Transistors T -3 3 -3 1 High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications


    OCR Scan     		PDF 2N6671, 2N6672, 2N6673 T0-204AA T0-204AA 2N6673* 2n6671 RCA8767

    BDT65CF

    Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C
    Text: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF aSOT186 BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F BDT65CF BDT65AF 65AF BDT64AF BDT64CF BDT64F BDT65BF BDT65C

    Untitled

    Abstract: No abstract text available
    Text: TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors SB;SSä PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS PART NUMBER V BOTTOM VIEW *D (A) TP2010L -200 10 -0.18 TP2410L -240 10 -0.18 ,1 2 3 . 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDV24 1^3 I 1—


    OCR Scan     		PDF TP2010L, TP2410L O-226AA) TP2010L VPDV24

    2SB1255

    Abstract: 2SB1155 2SD1706
    Text: Power Transistors 2 SB 1 1 5 5 2SB1155 Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 706 Unit : mm 5 2max. . 15.5max. • Features 6.9min. 1 ¡ -fe r z i- • Low collector-eim itter saturation voltage VcE<sao


    OCR Scan     		PDF 2SB1155 2SD1706 2SB1255) ooib22ci 2SB1255 2SB1155 2SD1706

    Untitled

    Abstract: No abstract text available
    Text: m bZMTflSb GGlS^Sb 3 ^ • HITE MITSUBISHI ELEK LINEAR MITSUBISHI ICs (AV COMMON) M54573L bSE 1> TUNER BAND DECODER/DRIVER DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54573L is a semiconductor integrated circuit capable of three-band switching in TV and VCR tuners.


    OCR Scan     		PDF M54573L M54573L

    RCA 40251

    Abstract: 2N3055H 2N3055H RCA 2n6254 2N6253 2N6371 40251 2N637 2N6371 RCA rca 2n6254
    Text: SEMELAB y i ï i l Sb' POWER T R A N S IS T O R S 2N3055H, 2N 6253, 2N 6254, 2N6371, 40251 H om etaxial*Base High-Power Silicon N-P-N Transistors • 2 N 6 2 5 4 : premium type from 2N3055H family Rugged, Broadly Applicable Devices For Industrial and Commercial Use


    OCR Scan     		PDF 2N3055H, 2N6253, 2N6254, 2N6371, 2N3055H 2N6253 2N6251 RCA 40251 2N3055H RCA 2n6254 2N6371 40251 2N637 2N6371 RCA rca 2n6254

    FET BFW10

    Abstract: BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BSV81 BF327 BFW10 FET transistor BFS28 FET BFW11
    Text: Transistors silicon n-channel field effect transistors Type No. Drawing reference book 1 parts 1 and 2 e c 3 O VDB v SB V (V ) M axim um Ratings - VgBM 1dm Tj m ax. (V ) (m A) (°C ) Special Features Pt„t rOSion) 1'DStoffl at 25°C (mW) (£2) (£ï) INSULATED GATE FET (MOST)


    OCR Scan     		PDF BSV81 h--22-> crt6-25 FET BFW10 BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BF327 BFW10 FET transistor BFS28 FET BFW11

    MJE13007E

    Abstract: JE13006 MJE13Q07 JE13007
    Text: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê | T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS


    OCR Scan     		PDF b3b72S4 MJE13006 MJE13007 MJE13007E JE13006 MJE13Q07 JE13007

    transistor ecg246

    Abstract: ECG251 ECG2317 ECG252 ECG246 ecg 126 transistor ECG260 ecg253 ECG245 ECG247
    Text: PH IL IP S E C G INC SME D • Darlington Power Transistors Description NPN PIMP Collector To Base Volts BVc b O Emitter To Base Volts BVEBO Collector To Emitter Volts b v Ceo Max. Collector Current 1C Amps bb SB ^ f l GO OT l b B TbS m Z C G Maximum Ratings at T c =25°C


    OCR Scan     		PDF bbS312fl ECG243 ECG244 ECG245 ECG246 ECG247 ECG248 ECG249 ECG250 ECG251 transistor ecg246 ECG2317 ECG252 ecg 126 transistor ECG260 ecg253

    B806

    Abstract: No abstract text available
    Text: NEC S IL IC O N T R A N S IS T O R S ELECTRON DEVICE 2 SB 8 0 5 ,2 S B 80 6 PNP SILICON EPITAXIAL TRANSISTORS POWER M IN I MOLD DESCRIPTION The 2SB805 and 2SB806 are designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits.


    OCR Scan     		PDF 2SB805, 2SB806 2SB805 2SB806 2SD1006 2SB806) 2SB805) 2SD1007 B806

    30BF

    Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF 00M34bb T-33-IT OT186 TIP29F, TIP29AF, 30BF TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF

    T-43-25

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail


    OCR Scan     		PDF SL2363 SL2364 SL2363C SL2364C 37bflS2S T-43-25 200mW SL2364 T-43-25

    SL3045C

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 43E D • 37böS22 0D134ÖD H M Pl-SB " T m - i S GEC PLESSEY ¡ S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a m onolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated


    OCR Scan     		PDF 0D134Ã SL3245 SL3245 SL3045C SL3145 60MHz

    BD977

    Abstract: BD975 Q62702-D966 BD 976 BD979 QQG4457 Q62702-D964 BD 202 transistors
    Text: T> m fl23 Sb 05 QQ044SS 0 « S I E 6 r 1 NPN Silicon Darlington Transistors SSC SIEMENS AKTIENGESELLSCHAF T-33-29 BD 975 BD 977 0 - BD 979 ^ 25 BD 975, BD 977, and BD 979 are epitaxial NPN silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors aredesigned for relay drivers


    OCR Scan     		PDF fl23Sb05 T-33-29 Q62702-D962 Q62702-D964 Q62702-D966 BD975 BD977 -BD979 BD 976 BD979 QQG4457 BD 202 transistors

    RCA 2N5322

    Abstract: rca 2n3772 RCA-1N1763A RCA-2N2102 CA3085-SERIES 1N1763 RCA-2N5322 voltage regulator ca3085a ca3085a40v 1N1763A
    Text: CA3085, CA3085A CA3085B SB HARRIS S E M I C O N D U C T O R Positive Voltage Regulators from 1.7V to 46V at Currents Up to 100mA May 1992 Features Description • Up to 100mA Output Current The CA3085, CA3085A, and CA3085B are silicon monolithic Integrated


    OCR Scan     		PDF CA3085, CA3085A CA3085B 100mA CA3085A, CA3085B CA3085 RCA-2N3772 RCA-1N1763A RCA 2N5322 rca 2n3772 RCA-2N2102 CA3085-SERIES 1N1763 RCA-2N5322 voltage regulator ca3085a ca3085a40v 1N1763A