Untitled
Abstract: No abstract text available
Text: SB61H1024BS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
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Original
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SB61H1024BS
SB61H1024BS
072-words
32-pin
300mil
072-word
500mV
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PDF
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Untitled
Abstract: No abstract text available
Text: SB61H1024BS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
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Original
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SB61H1024BS-XG
SB61H1024BS-XG
072-words
32-pin
300mil
072-word
500mV
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PDF
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sb61h1024bs-12
Abstract: No abstract text available
Text: SB61H1024BS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
SB61H1024BS
SB61H1024BS
072-words
32-pin
300mil
072-word
500mV
sb61h1024bs-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SB61H1024BS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
SB61H1024BS-XG
SB61H1024BS-XG
072-words
32-pin
300mil
072-word
500mV
|
PDF
|