SBT5551F Search Results

SBT5551F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SBT5551F		AUK	NPN Silicon Transistor		Original	PDF

SBT5551F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SBT5551F Abstract: Transistor KST-2097-000 transistor 2097 SBT5401F Text: SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F	Original	PDF	SBT5551F SBT5401F OT-23F KST-2097-000 SBT5551F Transistor KST-2097-000 transistor 2097 SBT5401F
SBT5551F Abstract: SBT5401F SBT5401 Text: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 3 Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F	Original	PDF	SBT5551F SBT5401F OT-23F KSD-T5C076-000 SBT5551F SBT5401F SBT5401
SBT5401F Abstract: Transistor SBT5551F Text: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	PDF	SBT5401F -160V, -160V SBT5551F OT-23F KST-2096-001 SBT5401F Transistor SBT5551F
SBT5401F Abstract: SBT5551F Text: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	PDF	SBT5401F -160V, -150V SBT5551F OT-23F KST-2096-000 -50mA, -10mA, SBT5401F SBT5551F
SBT5401F Abstract: SBT5551F SBT5401 Text: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application 3 Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	PDF	SBT5401F -160V, -160V SBT5551F OT-23F KSD-T5C091-000 SBT5401F SBT5551F SBT5401
Untitled Abstract: No abstract text available Text: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • high collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)	Original	PDF	SBT5551F SBT5401F OT-23F KSD-T5C076-000
S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Text: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	PDF	SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Untitled Abstract: No abstract text available Text: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)	Original	PDF	SBT5401F SBT5551F KSD-T5C091-000