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    SC-89 MOSFET Search Results

    SC-89 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    SC-89 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CHM6426XGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM6426XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. SC-62/SOT-89


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    CHM6426XGP SC-62/SOT-89 250uA CHM6426XGP PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM6426XPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. SC-62/SOT-89


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    CHM6426XPT SC-62/SOT-89 250uA PDF

    CHM1273XGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM1273XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small surface mounting type. SC-62/SOT-89


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    CHM1273XGP SC-62/SOT-89 SC-62/SOT-89) CHM1273XGP PDF

    CHM1592XGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM1592XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE


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    CHM1592XGP SC-62/SOT-89 SC-62/SOT-89) CHM1592XGP PDF

    MOSFET SOT-89 package

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM3055LXPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE


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    CHM3055LXPT SC-62/SOT-89 SC-62/SOT-89S 250uA MOSFET SOT-89 package PDF

    CHM3055LXGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE


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    CHM3055LXGP SC-62/SOT-89 250uA CHM3055LXGP PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    Si1013R/X 2002/95/EC SC-75A SC-89 SC-75A OT-416) Si1013R 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


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    Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


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    Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SC-89-3

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    Si1013R/X 2002/95/EC SC-75A SC-89 SC-75A OT-416) Si1013R 2011/65/EU 2002/95/EC. 2002/95/EC SC-89-3 PDF

    SC-75

    Abstract: SC-75A SC-89 Si1013R Si1013X Si1013X-T1-GE3
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X SC-75 SC-89 Si1013X-T1-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    Si1013R/X 2002/95/EC SC-75A SC-89 SC-75A OT-416) Si1013R 11-Mar-11 PDF

    SC-89

    Abstract: No abstract text available
    Text: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories


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    2N7002KT SC-89 14-Sep-09 SC-89 PDF

    SC-89

    Abstract: No abstract text available
    Text: WTX7002 N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Low Gate Charge for Fast Switching * ESD Protected Gate Drain 3 APPLICATIONS: * Power Management Load Switch * Portable Applications such as Cell Phones, Media Players,


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    WTX7002 SC-89 25-Jan-09 SC-89 50BSC PDF

    Si1016CX

    Abstract: si1016x-t1-ge3 SI1016X
    Text: Specification Comparison Vishay Siliconix Si1016CX vs. Si1016X Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs SC-89 Identical Part Number Replacements: Si1016CX-T1-GE3 replaces Si1016X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


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    Si1016CX Si1016X SC-89 Si1016CX-T1-GE3 Si1016X-T1-GE3 21-Apr-11 PDF

    SC-75

    Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


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    Si1012R/X SC-75A SC-89 Si1012R-Ted 08-Apr-05 SC-75 SC-89 Si1012R-T1 Si1012X-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


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    Si1012R/X SC-75A SC-89 S-50366--Rev. 28-Feb-05 PDF

    SC-89

    Abstract: SC-75 SC-75A
    Text: WTX1012 N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: * Power Mosfet : 1.8V Rated * Gate-Source ESD Protected: 2000 V * High-Side Switching * Low On-Resistance: 0.7Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 10 ns SC-89


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    WTX1012 SC-89 SC-75A) 31-Mar-09 SC-89 50BSC SC-75 SC-75A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers


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    Si1039X 2002/95/EC SC-89 Si1039X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    VISHAY MARKING S10

    Abstract: No abstract text available
    Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers


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    Si1037X 2002/95/EC SC-89 Si1037X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VISHAY MARKING S10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers


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    Si1039X 2002/95/EC SC-89 Si1039X-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET transistors Power MOSFET transistors Features • available in the following packages — MPT3 SC-62, US/European SOT-89 — CPT F5 (SC-63, TO-252 D-PAK) — PSD(D2-PAK) • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on


    OCR Scan
    SC-62, OT-89) SC-63, O-252 2SK2094 2SK2041 2SK2103 2SK2094F5 PDF