SC-89
Abstract: Si1037X MARKING CODE N
Text: Si1037X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) –20 TrenchFETr Power MOSFET Low Threshold Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm Low 0.6-mm Profile rDS(on) (W) ID (A) 0.195 @ VGS = –4.5 V
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Si1037X
SC-89
S-04766--Rev.
08-Oct-01
SC-89
MARKING CODE N
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AN609
Abstract: Si1037X
Text: Si1037X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1037X
AN609
27-Apr-07
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PDF
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VISHAY MARKING S10
Abstract: No abstract text available
Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers
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Original
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Si1037X
2002/95/EC
SC-89
Si1037X-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VISHAY MARKING S10
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers
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Original
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Si1037X
SC-89
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers
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Original
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Si1037X
2002/95/EC
SC-89
Si1037X-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1037X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.195 at VGS = - 4.5 V - 0.84 - 20 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 • • • • Halogen-free Option Available TrenchFET Power MOSFET
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Si1037X
SC-89
Si1037X-T1-E3
Si1037X-T1-GE3
08-Apr-05
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PDF
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MARKING CODE N
Abstract: No abstract text available
Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers
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Original
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Si1037X
2002/95/EC
SC-89
Si1037X-T1-GE3
11-Mar-11
MARKING CODE N
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers
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Original
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Si1037X
SC-89
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Si1037X
Abstract: No abstract text available
Text: SPICE Device Model Si1037X Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1037X
18-Jul-08
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PDF
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SC-89
Abstract: Si1037X
Text: Si1037X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.195 at VGS = - 4.5 V - 0.84 - 20 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 • • • • Halogen-free Option Available TrenchFET Power MOSFET
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Original
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Si1037X
SC-89
Si1037X-T1-E3
Si1037X-T1-GE3
18-Jul-08
SC-89
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PDF
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WL MARKING CODE VISHAY
Abstract: SC-89 mosfet SC-89-6 SC-89 Si1037X
Text: Si1037X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) - 20 TrenchFETr Power MOSFET Low Threshold Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm Low 0.6-mm Profile rDS(on) (W) ID (A) 0.195 @ VGS = - 4.5 V - 0.84 APPLICATIONS
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Si1037X
SC-89
Si1037X-T1
08-Apr-05
WL MARKING CODE VISHAY
SC-89 mosfet
SC-89-6
SC-89
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PDF
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SC-89
Abstract: Si1037X
Text: Si1037X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) - 20 TrenchFETr Power MOSFET Low Threshold Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm Low 0.6-mm Profile rDS(on) (W) ID (A) 0.195 @ VGS = - 4.5 V - 0.84 APPLICATIONS
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Original
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Si1037X
SC-89
Si1037X-T1
S-31990--Rev.
13-Oct-03
SC-89
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PDF
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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PDF
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