Untitled
Abstract: No abstract text available
Text: SN74LVC32 QUADRUPLE 2-INPUT POSITIVE-OR GATE SCAS286B - JANUARY 1993 - REVISED JULY 19SS | D, DB, OR PW PACKAGE TOP VIEW • EPIC (Enhanced-Performance Implanted CMOS) Submicron Process • ESD Protection Exceeds 2000 V Per MII-STD-883C, Method 3015; Exceeds 200 V
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SN74LVC32
SCAS286B
MII-STD-883C,
JESD-17
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SN74LVC32
Abstract: No abstract text available
Text: SN74LVC32 QUADRUPLE 2-INPUT POSITIVE-OR GATE SCAS286B – JANUARY 1993 – REVISED JULY 1995 D D D D D D D EPIC Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per Mil-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74LVC32
SCAS286B
Mil-STD-883C,
JESD-17
SN74LVC32
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Untitled
Abstract: No abstract text available
Text: SN74LVC14 HEX SCHMITT-TRIGGER INVERTER SCAS285B - MARCH 1993 - REVISED JULY 1995 • EP/C Enhanced-Performance Implanted CMOS Submicron Process I D, DB, OR PW PACKAGE (TOP VIEW) • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
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SN74LVC14
SCAS285B
MIL-STD-883C,
JESD-17
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